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Graphene-based GaN epitaxial layer lift-off method

A graphene and gallium nitride technology, applied in the field of microelectronics, can solve the problems of high cost, high substrate price, inability to obtain gallium nitride films, etc., and achieves the effect of reducing the degree of damage, reducing the cost of stripping, and recycling and saving

Active Publication Date: 2021-04-06
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The current methods for obtaining gallium nitride thin films are generally as follows: the homogeneous epitaxy of gallium nitride is realized on the gallium nitride free-standing substrate. The advantage of this method is that the quality of the obtained gallium nitride is good. The disadvantage is that Gallium nitride self-supporting substrates are expensive, and the price of 2-inch self-supporting gallium nitride substrates is about 10 times that of SiC substrates of the same size, and 100 times that of Si substrates; heteroepitaxy on sapphire, SiC and other substrates Gallium nitride, the stripping method of gallium nitride is generally mechanical grinding. For SiC substrates, since the substrate cannot be reused after mechanical grinding, the price of the substrate itself is high, so the cost is extremely high
The advantage of the laser lift-off method is that the time is fast, and the sapphire and the substrate can be recycled. The disadvantage is that when the gallium nitride film at the interface is decomposed by laser lift-off, it will cause cracks around the gallium nitride film, so a large-area continuous and non-destructive gallium nitride film cannot be obtained.

Method used

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  • Graphene-based GaN epitaxial layer lift-off method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Example 1, transferring 1um-thick gallium nitride grown on bilayer graphene to a silicon substrate.

[0041] Step 1. CVD method grows graphene on copper foil.

[0042] 1a) Fold the polished copper foil into a moderately sized purse, put it into a quartz boat, push it to the constant temperature area in the center of the quartz tube, and turn on the vacuum pump to evacuate to 1Pa;

[0043] 1b) Introduce 20 sccm of H into the quartz tube 2 , while heating the quartz tube, when the temperature reaches 700 ° C, then feed 20 sccm H into the quartz tube at the same time 2 and 700 sccm of Ar, continue heating until the temperature of the quartz tube reaches 1050 °C;

[0044] 1c) Keep the temperature constant, close all intake valves, and make the vacuum pump pump the air pressure in the quartz tube to 1Pa;

[0045] 1d) The temperature is kept constant, and 2 sccm of O is passed into the quartz tube 2 , maintain 2min;

[0046] 1e) Keep the temperature constant, close all int...

Embodiment 2

[0067] Example 2, transferring 2um-thick gallium nitride grown on four-layer graphene to the PET flexible substrate.

[0068] Step A. CVD method grows graphene on copper foil.

[0069] The specific implementation of this step is the same as 1 in Embodiment 1.

[0070] Step B. Transferring four-layer graphene onto a sapphire substrate.

[0071] B1) spin-coat and solidify PMMA on the copper foil surface that grows graphene:

[0072] The concrete realization of this step is identical with step 2a)-2b) among the embodiment 1;

[0073] B2) cut the copper foil solidified with PMMA into four small pieces of the same size and place them in the ammonium persulfate solution of 64g / L, and with the graphene side up, soak for 8 hours, remove the metal substrate, and obtain four A single-layer graphene film with PMMA;

[0074] B3) transfer monolayer graphene to sapphire substrate and dissolve PMMA:

[0075] The concrete realization of this step is identical with step 2d)-2f) among the ...

Embodiment 3

[0085] Example 3, transferring 3um-thick gallium nitride grown on six-layer graphene onto a diamond substrate.

[0086] Step 1. CVD method to grow graphene on copper foil:

[0087] The specific implementation of this step is the same as step 1 in Embodiment 1.

[0088] Step 2. Transfer six-layer graphene to the sapphire substrate:

[0089] 2.1) Spin-coat and solidify PMMA on the surface of copper foil with graphene grown:

[0090] The concrete realization of this step is identical with step 2a)-2b) among the embodiment 1;

[0091] 2.2) cut the copper foil solidified with PMMA into six small pieces of the same size and place them in the ammonium persulfate solution of 64g / L, and soak the graphene side up for 8 hours, remove the metal substrate, and obtain six A single-layer graphene film with PMMA;

[0092] 2.3) Transfer monolayer graphene to sapphire substrate and dissolve PMMA:

[0093] The concrete realization of this step is identical with step 2d)-2f) among the embodi...

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Abstract

The invention discloses a stripping method of a graphene-based gallium nitride epitaxial layer, which mainly solves the problems of complex stripping technology, high cost and low quality of the stripped gallium nitride film. The implementation plan is: firstly grow graphene by CVD on the polished copper foil; then transfer multi-layer graphene on the sapphire substrate; A gallium nitride epitaxial layer is grown on the substrate; finally, the grown gallium nitride epitaxial layer is peeled off and transferred to the target substrate using a thermal release tape. The present invention relieves the stress caused by lattice mismatch between the substrate and the epitaxial layer through graphene, and through the weak van der Waals force between the epitaxial layer and graphene, the epitaxial layer is easily peeled off and transferred to the target substrate The bottom can be used to realize the reuse of the original substrate, and can also be used to make gallium nitride self-supporting substrates and flexible devices.

Description

technical field [0001] The invention belongs to the field of microelectronic technology, and further relates to a stripping method based on gallium nitride epitaxial layer, which can be used to transfer gallium nitride to other substrates to manufacture semiconductor devices. Background technique [0002] As the core key material of the third-generation semiconductor industry, wide-bandgap nitride semiconductor materials have excellent properties such as extremely high photoelectric conversion efficiency and low power consumption, and are the core foundation of the future generation of optoelectronics, power electronics and high-frequency microelectronics. At the same time, with the development of wearable technology, flexible semiconductor technology will gradually become the mainstream in the future, and the preparation of flexible GaN has become a hot spot. In the traditional mainstream process, due to the high cost of large-scale nitride substrates, nitride thin films ar...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/78H01L21/02
CPCH01L21/02425H01L21/02527H01L21/0254H01L21/0262H01L21/02658H01L21/02664H01L21/7813H01L21/02002H01L21/02444H01L21/02499
Inventor 宁静贾彦青张进成闫朝超王东王博宇马佩军郝跃
Owner XIDIAN UNIV