Check patentability & draft patents in minutes with Patsnap Eureka AI!

Zinc oxide-porous silicon composite material and preparation method and application thereof

A technology of composite materials and porous silicon, applied in nanotechnology for materials and surface science, hybrid capacitor electrodes, nanotechnology, etc., can solve the problems of active chemical properties and poor capacitance characteristics of porous silicon surface, and facilitate industrialization The effect of application, improvement of capacitance characteristics, and simple preparation process

Active Publication Date: 2019-09-24
JIANGSU UNIV
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the above technical problems, the present invention provides a zinc oxide-porous silicon composite material and its preparation method and application. The present invention improves the capacitance characteristics and electrochemical stability of porous silicon while passivating the surface of porous silicon, and solves the problem of The surface of porous silicon has active chemical properties, and it is easy to react with external conditions, resulting in poor capacitance characteristics.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Zinc oxide-porous silicon composite material and preparation method and application thereof
  • Zinc oxide-porous silicon composite material and preparation method and application thereof
  • Zinc oxide-porous silicon composite material and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0034] A preparation method of zinc oxide-porous silicon composite material, comprising the following steps:

[0035] material selection:

[0036] The resistance of the selected silicon chip is 1-10Ωcm 2 And p-type single crystal silicon with a crystal orientation of [100], single-sided polishing.

[0037] Preparation of porous silicon:

[0038] Pretreatment of silicon wafers: sputtering a layer of metal aluminum film on the surface of single crystal silicon to ensure good electrical conductivity between the back of the silicon substrate and the metal anode. Cut the pretreated silicon wafers into 14mm×14mm squares, use acetone, alcohol, and deionized water to ultrasonically clean the silicon surface to remove impurities, and then use dilute HF acid to soak and rinse to remove the surface oxide layer. The electrolyte is a mixed solution of 40% hydrofluoric acid HF, absolute ethanol and N,N-dimethylformamide DMF; preferably, the hydrofluoric acid HF, absolute alcohol and N,N-...

Embodiment 1

[0050] This embodiment is a preferred embodiment of the method for preparing the zinc oxide-porous silicon composite material of the present invention, including the following steps:

[0051] Select material: silicon chip resistance is 1-10Ωcm 2 And p-type single crystal silicon (single-side polished) with a crystal orientation of [100].

[0052] Preparation of porous silicon: pretreat the silicon wafer, and sputter a layer of metal aluminum film with a thickness of about 800nm ​​on the surface of the single crystal silicon to ensure good conductivity between the back of the silicon substrate and the metal anode. Subsequently, the pretreated silicon wafers were cut into squares of 14mm×14mm. Then use acetone, alcohol, and deionized water to ultrasonically clean to remove impurities on the silicon surface, and then use dilute HF acid to soak and rinse to remove the surface oxide layer. Electrolyte selects the mixed solution of 40% hydrofluoric acid HF, dehydrated alcohol and ...

Embodiment 2

[0065] This Example 2 is a comparison of Example 1. The difference between this Example 2 and Example 1 is that the preparation of the zinc oxide-porous silicon composite material in this Example 2 is prepared by using the traditional hydrothermal growth method. During preparation, a certain amount of sol liquid is firstly injected into the hydrothermal synthesis reactor, and the prepared porous silicon sample is sealed with a heat-resistant and waterproof sealant at the part that does not need to be compounded, and then the porous silicon sample is put into the reactor. Set the temperature of the transverse oven at 120°C, take out the sample after 8 hours of heat preservation, wash and dry to obtain the zinc oxide-porous silicon composite material.

[0066] Result analysis:

[0067] Figure 9 (a) and (b) are the SEM characterization results of the zinc oxide-porous silicon composite prepared by the hydrothermal growth method. It can be easily found that the porous silicon surf...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a zinc oxide-porous silicon composite material and a preparation method and an application thereof. The preparation method comprises the steps of the preparation of porous silicon, namely, preparing a porous silicon structure on a monocrystalline silicon substrate by using an electrochemical anodic etching method; the preparation of zinc oxide sol, namely, preparing sol capable of providing zinc ions; and the preparation of a composite material, namely, compounding a nano zinc oxide material on the surface of porous silicon by combining vacuum filtration with a sol homogenizing method, and preparing a zinc oxide coated porous silicon / zinc oxide composite material after heat treatment, namely, the zinc oxide-porous silicon composite material. The surface of porous silicon is passivated by utilizing the nano zinc oxide layer on the surface of porous silicon, the capacitance characteristic, the charge-discharge characteristic and the electrochemical stability of porous silicon are greatly improved by utilizing the synergistic effect of the pseudocapacitance characteristic of zinc oxide and the double-electric-layer characteristic of porous silicon, the problem that the surface of porous silicon is active in chemical characteristic is solved, and the application prospect of porous silicon in the related fields such as light-emitting materials and devices is widened.

Description

technical field [0001] The invention belongs to the field of electrode material preparation, and relates to a zinc oxide-porous silicon composite material and a preparation method and application thereof. Background technique [0002] The rapid growth in the number and variety of portable electronic devices in recent years has created a need for efficient micropower systems. Supercapacitors, also known as electrochemical capacitors, have attracted much attention due to their high power density and long cycle life. They store energy through double layer formation (electric double layer supercapacitors) or additional near-surface redox reactions (pseudocapacitors). Major efforts to develop solid-state micro-supercapacitors have focused on carbon-based electrode materials. Various forms of carbon or carbon composites have been investigated for solid-state supercapacitor applications. However, to further miniaturize the size of portable electronic devices and enable local ene...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01G11/30H01G11/46B82Y30/00
CPCB82Y30/00H01G11/30H01G11/46Y02E60/13
Inventor 葛道晗卢乐张立强杨平丁建宁
Owner JIANGSU UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com