A kind of ytterbium oxychloride nanosheet and its preparation method and application
A technology of ytterbium oxychloride and nanosheets, which is applied in the field of inorganic semiconductor materials, can solve problems such as the impact of application range, long reaction time, and high equipment requirements, and achieve the effects of convenient operation, fast reaction speed, and stable chemical properties
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Embodiment 1
[0039] The present embodiment provides a kind of YbOCl nano sheet, and its preparation method specifically comprises the following steps:
[0040] (1) Add 0.5g Yb 2 o 3 , 0.5gYbCl 3 ·6H 2 O and 0.05g NaCl are mixed evenly, placed in a quartz boat, and the clean double-sided polished sapphire substrate is buckled on the quartz boat loaded with uniformly mixed powder;
[0041] (2) Place the quartz boat carrying the double-sided sapphire substrate in the middle of the quartz tube of the single-temperature zone tube furnace, and then repeatedly clean the quartz tube with argon, then raise the furnace temperature to 760 within 30 minutes. ℃, keep the flow rate of the carrier gas Ar at 120 sccm, grow for 30 minutes and then cool down to room temperature naturally to obtain YbOCl nanosheets grown on the sapphire substrate.
Embodiment 2
[0043] The present embodiment provides a kind of YbOCl nano sheet, and its preparation method specifically comprises the following steps:
[0044](1) Add 0.5g Yb 2 o 3 , 0.5gYbCl 3 ·6H 2 O and 0.1g NaCl are mixed evenly, placed in a quartz boat, and the clean double-sided polished sapphire substrate is buckled on the quartz boat loaded with uniformly mixed powder;
[0045] (2) Place the quartz boat carrying the double-sided sapphire substrate in the middle of the quartz tube of the single-temperature zone tube furnace, and then repeatedly clean the quartz tube of the single-temperature zone tube furnace with argon, and within 30 minutes Raise the furnace temperature to 780°C, keep the flow rate of the carrier gas (argon) at 150 sccm, grow for 30 minutes and then cool down to room temperature naturally to obtain YbOCl nanosheets grown on the sapphire substrate.
Embodiment 3
[0047] The present embodiment provides a kind of YbOCl nano sheet, and its preparation method specifically comprises the following steps:
[0048] (1) Add 0.45g Yb 2 o 3 , 0.5gYbCl 3 ·6H 2 O and 0.1g NaCl are mixed evenly, placed in a quartz boat, and the clean double-sided polished sapphire substrate is buckled on the quartz boat loaded with uniformly mixed powder;
[0049] (2) Place the quartz boat carrying the double-sided sapphire substrate in the middle of the quartz tube of the single-temperature zone tube furnace, and then repeatedly clean the quartz tube of the single-temperature zone tube furnace with argon, and within 30 minutes Raise the furnace temperature to 750°C, keep the flow rate of the carrier gas (argon) at 120 sccm, grow for 40 minutes and cool down to room temperature naturally to obtain YbOCl nanosheets grown on the sapphire substrate.
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