Organic photoelectric detector and manufacturing method thereof

Abstract

The invention discloses an organic photoelectric detector and a manufacturing method thereof. A main functional layer is prepared by solution spin coating. The method has simple process, low cost andhigh mechanical property and is suitable for preparing a flexible wearable device. Functional layer materials are all nanoparticle dispersions, solvent of the dispersions is volatile solvent, the solvent can be removed at low temperature or at room temperature after spin coating, an efficient device functional layer material is formed, the complicated process such as high vacuum evaporation or high temperature annealing crystallization is not needed, cost is low, and the method is more suitable for large-scale manufacturing. The active layer organic material is a bulk heterojunction PN-junction material, and the material can be in effective contact with a variety of functional layer materials and can form function matching with the functional layer material. The method is advantaged in that the method is simple, preparation can be achieved at low temperature or at room temperature, the process requirements are low, cost is low, mechanical performance is good, and the method is suitablefor preparing rigid and flexible substrate devices.

Description

technical field [0001] The invention relates to a photoelectric device and a preparation method thereof, in particular to an organic photoelectric device and a preparation method thereof, which are applied in the technical fields of light detection and imaging. Background technique [0002] Optoelectronics technology covers a wide range of technical fields. It not only involves the generation of optical signals, but also involves the reception and detection of optical signals. It converts the received optical radiation into another type of physical quantity that is easy to operate and measurable , usually converted into electricity to achieve the ultimate goal of target detection. Photoelectric detection and imaging is an important branch of the current application of optoelectronic technology, which can clearly image the target and meet the needs of military and civil applications. Photoelectric imaging devices need to meet the following requirements: higher sensitivity to...

AI Technical Summary

Problems solved by technology

[0004] In the prior art, when preparing organic photodetectors, it needs to be prepared through complex processes such as high-vacuum evaporation or high-temperature annealing and crystallization. The organic materials are easily carbonized at high temperatures, resulting in material failure and high cost. High-quality and long-life new-generation photodetection and imaging technology basic devices are developing. A new generation of photodetection devices with simple preparation process, low cost, high mechanical properties, and suitable for the preparation of flexible wearable devices has become an urgent technical problem to be solved.

Images