Semiconductor material and preparation methods and applications thereof

A semiconductor and reaction technology, applied in the field of semiconductor materials and its preparation, can solve the problems of low carrier mobility and poor stability

Active Publication Date: 2019-11-19
PEKING UNIV SHENZHEN GRADUATE SCHOOL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above deficiencies in the prior art, the purpose of the present invention is to provide a semiconductor material and its pr...

Method used

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  • Semiconductor material and preparation methods and applications thereof

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Comparison scheme
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Embodiment 1

[0105] Embodiment 1 A kind of molecular structural formula is A method for preparing a semiconductor material, comprising the steps of:

[0106] a. Under nitrogen atmosphere, dissolve 30g of 1-bromo-3-fluoro-iodobenzene in 400ml of anhydrous ether, add 40ml of 2.5M n-butyllithium solution dropwise at -78°C, and then add 24g of copper bromide, stirred at low temperature for one hour, then added 14g of nitrobenzene, stirred overnight at room temperature, added water to quench the reaction, separated liquids, dried the organic phase with anhydrous sodium sulfate, rotary evaporated to remove the solvent, and purified through a column to obtain 7.83g molecular structure formula is White solid B1, yield 45%;

[0107] b. In a nitrogen atmosphere, dissolve 3.48g of compound B1 in 100ml of anhydrous toluene, add 3.4g of ethyl 3-mercaptoacrylate, 0.17g of tris(dibenzylideneacetone) dipalladium and 8.65g of anhydrous potassium carbonate, 110°C Heated for 20 hours, cooled, quenched w...

Embodiment 2

[0113] Embodiment 2 A kind of molecular structural formula is A method for preparing a semiconductor material, comprising the steps of:

[0114] a. Dissolve 17.4g chlorinated o-xylene in 250ml dichloromethane, add 0.5TMBAC, 50ml sodium sulfide nonahydrate (36g) solution is added dropwise in the dichloromethane solution, heat and reflux overnight, cool, wash with water, organic The phase was dried with anhydrous sodium sulfate, spin-dried, and purified by column chromatography to obtain 7.48g molecular structure formula: The transparent liquid B2, yield 55%;

[0115] b. Dissolve 5.44g of compound B2 in 100ml of chloroform, and add NaIO dropwise at 0°C 4 (8.56g) solution, stir overnight, remove inorganic salt by suction filtration, spin dry, recrystallize with ethyl acetate and sherwood oil, obtain 4.5g molecular structure formula is White solid C2, yield 75%;

[0116] c. Mix and grind 3g of compound C2 with 3g of neutral alumina powder, and sublimate to obtain 2.2g of mo...

Embodiment 3

[0120] Embodiment 3 A molecular structural formula is A method for preparing a semiconductor material, comprising the steps of:

[0121] a. Dissolve 17.1g of 3-bromo-o-dibromodibromotoluene in 200ml of DCM, add 0.5g of TEMBAC, and add 100ml (18g) of sodium sulfide nonahydrate solution dropwise, stir and reflux overnight, cool, wash with water, and separate the liquids. Drying over sodium sulfate, spin-drying, column chromatography purification, obtain 6.1g molecular structure formula is White solid B3, yield 57%;

[0122] b. Under nitrogen atmosphere, 0.6gNiCl 2 Add 1.45g of 2,2'-bipyridyl into 15ml of anhydrous DMF, heat to 70°C, after 20 minutes, add 10ml of B3 (1g) DMF solution dropwise, stir at 70°C for 12 hours, cool, and distill under reduced pressure DMF was removed, the solid was washed with water, extracted with DCM, the organic phase was dried over anhydrous sodium sulfate, concentrated and purified to obtain 0.26g of molecular structure formula: Yellow solid ...

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Abstract

The invention discloses a semiconductor material and preparation methods and applications thereof. A molecular structure general formula of the material is one of the formulas shown in the description. The semiconductor material provided by the invention is an imide derivative. The imide group can effectively reduce the energy level of the semiconductor molecular material, thereby improving the stability of the material, modify amines with different substituents, and effectively adjust the energy level, solubility and molecular stacking mode of the material, thereby obtaining the n-type semiconductor material with high mobility, high stability and solution processing.

Description

technical field [0001] The invention relates to the field of organic materials, in particular to a semiconductor material and its preparation method and application. Background technique [0002] Since the advent of organic field-effect transistors, they have been widely used in electronic circuits such as integrated circuits, radio frequency identification, and smart cards due to their advantages of solution processing, simple process, and large-area production. At present, a series of small molecule semiconductor materials with high hole mobility and electron mobility have appeared, among which, p-type materials such as BTBT, anthracene, pentacene derivatives, etc., and the mobility of BTBT derivatives have been over 25cm 2 / V / S, the single crystal device efficiency of rubrene exceeds 40cm 2 / V / S. n-type materials such as NDI, PDI derivatives and some other heterocyclic derivatives, etc., the mobility of n-type materials has been reported to exceed 10cm 2 / V / S. [000...

Claims

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Application Information

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IPC IPC(8): C07D495/22H01L51/50H01L51/42H01L51/05H01L51/54H01L51/46H01L51/30
CPCC07D495/22H10K85/657H10K10/00H10K30/00H10K50/00Y02E10/549C09B57/08C07D495/14H10K85/621H10K10/484
Inventor 孟鸿陈小龙贺耀武朱亚楠
Owner PEKING UNIV SHENZHEN GRADUATE SCHOOL
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