Barium titanate/lanthanum nickelate ferroelectric superlattice film material and preparation method thereof

A thin-film material and superlattice technology, which is applied in the field of barium titanate/lanthanum nickelate ferroelectric superlattice thin-film material and its preparation, can solve the problems of low ferroelectric polarization performance and achieve enhanced ferroelectric and dielectric properties Effect

Inactive Publication Date: 2019-12-03
SHENYANG POLYTECHNIC UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the ferroelectric polarization performance of barium titanate is relatively low, generall

Method used

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  • Barium titanate/lanthanum nickelate ferroelectric superlattice film material and preparation method thereof
  • Barium titanate/lanthanum nickelate ferroelectric superlattice film material and preparation method thereof
  • Barium titanate/lanthanum nickelate ferroelectric superlattice film material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] BTO-30 / LNO-3 Ferroelectric Superlattice Materials

[0035] (1) Nb-SrTiO 3 (001) The substrate was cleaned with acetone and ethanol for 10 minutes respectively, then heated to 750° C. in vacuum, and kept for 30 minutes;

[0036] (2) Under the conditions of a deposition temperature of 750°C and an oxygen pressure of 15Pa, the lanthanum nickelate target was bombarded with a pulsed laser, so that the Nb-SrTiO 3 (001) A lanthanum nickelate layer with a thickness of 3 unit cells is deposited on the substrate. Then convert the target to barium titanate, and deposit a barium titanate layer with a thickness of 30 unit cells on the lanthanum nickelate layer;

[0037] (3) The process of (2) was repeated 23 times to obtain the BTO-30 / LNO-3 ferroelectric superlattice material.

[0038] (4) Before the electrical performance test, use vacuum sputtering technology to coat platinum electrodes on the surface of the obtained ferroelectric superlattice, and the area of ​​each platinum e...

Embodiment 2

[0041] BTO-30 / LNO-2 ferroelectric superlattice material

[0042] (1) Nb-SrTiO 3 (001) The substrate was cleaned with acetone and ethanol for 10 minutes respectively, then heated to 750° C. in vacuum, and kept for 30 minutes;

[0043] (2) Under the conditions of a deposition temperature of 750°C and an oxygen pressure of 15Pa, the lanthanum nickelate target was bombarded with a pulsed laser, so that the Nb-SrTiO 3 (001) A lanthanum nickelate layer with a thickness of 2 unit cells is deposited on the substrate. Then convert the target to barium titanate, and deposit a barium titanate layer with a thickness of 30 unit cells on the lanthanum nickelate layer;

[0044] (3) Repeat the process of (2) 24 times to prepare BTO-30 / LNO-2 ferroelectric superlattice material.

[0045] (4) Before the electrical performance test, use vacuum sputtering technology to coat platinum electrodes on the surface of the obtained ferroelectric superlattice, and the area of ​​each platinum electrode i...

Embodiment 3

[0048] BTO-30 / LNO-1 ferroelectric superlattice material

[0049] (1) Nb-SrTiO 3 (001) The substrate was cleaned with acetone and ethanol for 10 minutes respectively, then heated to 750° C. in vacuum, and kept for 30 minutes;

[0050] (2) Under the conditions of a deposition temperature of 750°C and an oxygen pressure of 15Pa, the lanthanum nickelate target was bombarded with a pulsed laser, so that the Nb-SrTiO 3 (001) A lanthanum nickelate layer with a thickness of 1 unit cell is deposited on the substrate. Then convert the target to barium titanate, and deposit a barium titanate layer with a thickness of 30 unit cells on the lanthanum nickelate layer;

[0051] (3) Repeat the process of (2) 24 times to prepare the BTO-30 / LNO-1 ferroelectric superlattice material.

[0052] (4) Before the electrical performance test, use vacuum sputtering technology to coat platinum electrodes on the surface of the obtained ferroelectric superlattice, and the area of ​​each platinum electrod...

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Abstract

The invention aims to provide a barium titanate/lanthanum nickelate ferroelectric superlattice film material and a preparation method thereof. The material is composed of a ferroelectric oxide material barium titanate and a metal conductive oxide material lanthanum nickelate which grow periodically. The barium titanate/lanthanum nickelate ferroelectric superlattice film material has the advantagesthat the dielectric constant is increased by 11-90% compared with that of a pure barium titanate film; the barium titanate film has good ferroelectric polarization performance, the remnant polarization intensity of the barium titanate film reaches 13.1 mu C/cm<2>, the saturation polarization intensity of the barium titanate film reaches 34.6 mu C/cm<2>, and compared with a pure barium titanate film, the remnant polarization intensity of the barium titanate film is improved by 140%, and the saturation polarization intensity of the barium titanate film is improved by 58%. According to the preparation method of the material, lanthanum nickelate and barium titanate are alternately grown on a single crystal substrate by using a pulse laser deposition method, and the period thickness of superlattices is accurately regulated and controlled by controlling the time of laser bombarding different target materials. The ferroelectric superlattice material has wide application prospects in ferroelectric memories, sensors, actuators and other integrated ferroelectric devices.

Description

technical field [0001] The invention belongs to the fields of electronic information materials, functional materials and intelligent materials, and in particular relates to a barium titanate / lanthanum nickelate ferroelectric superlattice film material and a preparation method thereof. Background technique [0002] Ferroelectric thin films have excellent electrical properties such as ferroelectricity, piezoelectricity, photoelectricity, and dielectricity, and have broad application prospects in integrated ferroelectric devices such as data storage, crystal field effect transistors, and surface acoustic wave devices. It is of great significance to develop new ferroelectric thin film materials and greatly improve the ferroelectric, dielectric and other electrical properties of ferroelectric thin films, which is of great significance to improve the functional characteristics of integrated ferroelectric devices. [0003] Using thin film preparation technology, the perovskite oxid...

Claims

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Application Information

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IPC IPC(8): C23C14/08C23C14/28
CPCC23C14/08C23C14/088C23C14/28C23C28/04
Inventor 王占杰
Owner SHENYANG POLYTECHNIC UNIV
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