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Processing method for silicon carbide monocrystal substrate

A silicon carbide single crystal and processing method technology, applied in stone processing equipment, metal processing equipment, fine working devices, etc., can solve the problems of difficulty in ensuring substrate flatness and uniformity, slow grinding efficiency, and high cost , to achieve the effect of promoting industrialization, improving processing efficiency and realizing automation

Inactive Publication Date: 2019-12-06
ZHEJIANG EAST CRYSTAL BOLANTE PHOTOELECTRIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, silicon carbide single crystal materials have good chemical stability and high hardness, making the processing of silicon carbide single crystal substrates very difficult and costly and time-consuming. In order to further and faster realize industrialization and downstream applications, how to reduce silicon carbide single crystal The processing cost of the substrate and the development and application towards large size are the future development direction
[0004] The traditional silicon carbide single crystal substrate processing method is usually processed with silicon carbide or boron carbide free grit mortar, which is difficult to ensure the flatness and uniformity requirements of the entire batch of substrates. Difficult to ensure and improve

Method used

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  • Processing method for silicon carbide monocrystal substrate
  • Processing method for silicon carbide monocrystal substrate
  • Processing method for silicon carbide monocrystal substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Such as figure 1 As shown, the silicon carbide single crystal ingot is processed by the following process:

[0034] Step 1: Paste the silicon carbide single crystal ingot on the cutting base at a fixed angle, and perform diamond wire multi-line slicing processing. The process parameters set the line speed to 400m / s, the base descending speed to 1mm / hr, The wire feeding rate is 1m / min and the swing angle is 1-10°. This cutting process completes the cutting sheet.

[0035] Step 2: Put the cutting piece into the double-sided diamond disc grinder for double-sided rough grinding, where the processing pressure is 10g / mm 2 , The processing speed is 5rpm.

[0036] Step 3: The substrate after rough grinding is waxed and attached to the ceramic disc for single-sided rough polishing with conventional diamond liquid. The pure copper disc machine is used, and the processing pressure of the process parameters is 50g / mm 2 , the processing speed is 5rpm, and the diamond liquid adopt...

Embodiment 2

[0039] Step 1: Attach the silicon carbide single crystal ingot to the cutting base at a fixed angle, and perform diamond wire multi-line slicing processing. The process parameters set the line speed to 1500m / s, the base descending speed to 20mm / hr, The wire feeding rate is 20m / min and the swing angle is 1-10°. This cutting process completes the cutting sheet.

[0040] Step 2: Put the cutting piece into the double-sided diamond disc grinder for double-sided rough grinding, where the processing pressure is 120g / mm 2 , The processing speed is 40rpm.

[0041] Step 3: The substrate after rough grinding is waxed and attached to the ceramic disc for single-sided rough polishing with conventional diamond liquid. The pure copper disc machine is used, and the processing pressure of the process parameters is 250g / mm 2 , the processing speed is 50rpm, and the diamond liquid adopts 3μm diamond particle size.

[0042] Step 4: Perform chemical mechanical fine polishing on the substrate aft...

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Abstract

The invention relates to a processing method for a silicon carbide monocrystal substrate. The method comprises the steps that a silicon carbide monocrystal product is cut by a diamond line; then grinding is conducted with a diamond disk; then rough polishing is carried out with a diamond polishing solution; and finally the silicon carbide monocrystal substrate is obtained through fine polishing. The processing method provided by the invention has the beneficial effects that both processing efficiency and planar evenness can be increased; quality requirements of a semiconductor-level surface can be satisfied with the final step of chemical mechanical fine polishing; the method can greatly reduce processing time and processing cost; and a processing yield of the silicon carbide monocrystal substrate can be effectively increased.

Description

technical field [0001] The invention relates to the field of semiconductor material processing, in particular to a method for processing a silicon carbide single crystal substrate. Background technique [0002] With the breakthrough in the mass production of the third-generation semiconductor material single crystal silicon carbide substrate, the power electronics, high frequency, high temperature resistance, and high power components made of it as the substrate have absolute advantages in the fields of energy saving and electrical performance. Advantages, thus ushering in a golden period of development, the market size is rapidly expanding. [0003] As the third-generation wide bandgap semiconductor material, single crystal silicon carbide has wide bandgap, high thermal conductivity, high critical breakdown electric field and high electron saturation mobility. High-frequency, high-power electronic components have great application potential to meet the needs of high-temper...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B29/02B24B37/04B24B37/08B24B57/00B28D5/04H01L21/02
CPCB24B29/02B24B37/044B24B37/08B24B57/00B28D5/04H01L21/02013
Inventor 徐良阳明益占俊杰蓝文安刘建哲余雅俊
Owner ZHEJIANG EAST CRYSTAL BOLANTE PHOTOELECTRIC