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A semiconductor heterojunction gas-sensing material and its preparation method and application

A gas-sensing material and heterojunction technology, which is applied in the analysis of materials, material analysis by electromagnetic means, instruments, etc., can solve the problems of insufficient uniformity of semiconductor recombination, long synthesis cycle, high working temperature, etc., to improve sensitivity and response recovery The effect of time, high sensitivity, and excellent performance

Active Publication Date: 2020-09-18
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, intrinsic zinc oxide semiconductors have shortcomings in detecting low-concentration gases at low temperatures, such as low sensitivity, poor selectivity, and high operating temperature. For low concentration SO 2 Metal-oxide-semiconductor gas-sensing materials for gas detection
However, these methods have defects such as cumbersome operation, uneven semiconductor recombination, and long synthesis cycle. These defects also lead to these methods not being widely used in the preparation of compound semiconductor heterojunction materials.

Method used

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  • A semiconductor heterojunction gas-sensing material and its preparation method and application
  • A semiconductor heterojunction gas-sensing material and its preparation method and application
  • A semiconductor heterojunction gas-sensing material and its preparation method and application

Examples

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Effect test

Embodiment 1

[0044] A zinc oxide nickel oxide porous microsphere gas sensing material, the gas sensing material is a lamellar microsphere with a diameter of 2 μm and a specific surface area of ​​20.9 m 2 g -1 -23.9m 2 g -1 ,like Figure 4 shown.

[0045] With zinc acetate dihydrate Zn(CH 3 COO) 2 . 2H 2 O, nickel acetate tetrahydrate Ni(CH 3 COO) 2 . 4H 2 O as the raw material, polyvinylpyrrolidone (PVP-K30) as the surfactant and as the dispersant, deionized water as the solvent, the mass ratio of the metal salt (zinc salt and nickel salt) and the surfactant is 1:1.25, until the salt is dissolved Then, 0.19 g of ammonium carbonate was added, and the reaction was carried out at 180° C. for 2 hours. The product was washed and dried to obtain a precursor of zinc oxide and nickel oxide. The obtained precursor was kept at 450° C. for two hours and calcined to obtain a zinc oxide nickel oxide microsphere gas-sensing material. The molar percentage of nickel oxide was 0.5%.

[0046] ...

Embodiment 2

[0050] A zinc oxide nickel oxide porous microsphere gas sensing material, the gas sensing material is a lamellar microsphere with a diameter of 2 μm and a specific surface area of ​​20.9 m 2 g -1 -23.9m 2 g -1 .

[0051] With zinc acetate dihydrate Zn(CH 3 COO) 2 . 2H 2 O, nickel acetate tetrahydrate Ni(CH 3 COO) 2 . 4H 2 O as a raw material, polyvinylpyrrolidone (PVP-K30) as a surfactant and as a dispersant, deionized water as a solvent, the mass ratio of the metal salt and the surfactant is 1:1, and 0.1 g of ammonium carbonate is added after the salt is dissolved, The reaction was carried out at 150° C. for 1.8 hours, and the product was washed and dried to obtain a zinc oxide nickel oxide precursor. The obtained precursor was calcined at 400° C. for two hours to obtain a zinc oxide nickel oxide microsphere gas-sensing material. The molar percentage of nickel oxide was 1%.

[0052] A gas sensor was prepared with the zinc oxide nickel oxide composite material of ...

Embodiment 3

[0057] Compared with Example 1, a zinc oxide nickel oxide porous microsphere gas-sensing material, the gas-sensing material is a lamellar microsphere with a diameter of 2 μm and a specific surface of 20.9 m 2 g -1 -23.9m 2 g -1 .

[0058] With zinc acetate dihydrate Zn(CH 3 COO) 2 . 2H 2 O, nickel acetate tetrahydrate Ni(CH 3 COO) 2 . 4H 2 O as raw material, polyvinylpyrrolidone (PVP-K30) as surfactant and as dispersant, deionized water as solvent, the mass ratio of metal salt and surfactant is 1:1.5, after the salt is dissolved, 0.23g of ammonium carbonate is added, The reaction was carried out at 200° C. for 2.2 hours, and the product was washed and dried to obtain a zinc oxide nickel oxide precursor. The obtained precursor was calcined at 500° C. for two and a half hours to obtain a zinc oxide nickel oxide microsphere gas-sensing material. The molar percentage of nickel oxide was 0.25%.

[0059] The composite metal oxide gas-sensing material prepared in Example...

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Abstract

The invention relates a semiconductor heterojunction air-sensitive material and preparation method and application thereof. The air-sensitive material is of layered microsphere with a diameter being 1.6-2.5 micrometers, the specific area is 20.9-23.9m<2>g<-1>, the microsphere is a composite material comprising zinc oxide and nickel oxide, the composite material of the zinc oxide and the nickel oxide is hexagonal crystal, and the mole percent ratio of the nickel oxide accounts for 0.1-1%. The composite material has relatively rapid response speed, relatively high response value and relatively good selectivity within a range of 100-160 DEG C.

Description

technical field [0001] The invention belongs to the technical field of semiconductor gas-sensing material preparation, and particularly relates to a semiconductor heterojunction gas-sensing material and a preparation method and application thereof. Background technique [0002] The information disclosed in this Background section is only for enhancement of understanding of the general background of the invention and should not necessarily be taken as an acknowledgement or any form of suggestion that this information forms the prior art already known to a person of ordinary skill in the art. [0003] With the rapid development of industry, the emission of toxic and flammable gases from urban industries and fossil energy combustion has also increased accordingly. The exhaust gas includes nitrogen dioxide (NO 2 ), carbon monoxide (CO), sulfur dioxide (SO 2 ) and hydrogen sulfide (H 2 S), of which sulfur dioxide, is one of the most common air pollutants, forming acid rain, po...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/00C01G53/04C01G9/03C01G9/02
CPCC01G9/02C01G9/03C01G53/04C01P2004/61C01P2006/12G01N27/00
Inventor 刘久荣刘伟司文旭吴莉莉王凤龙汪宙
Owner SHANDONG UNIV
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