Chemical vapor deposition method and device for preparing polycrystalline silicon carbide

A technology of chemical vapor deposition and polycrystalline silicon carbide, which is applied in the directions of chemical instruments and methods, gaseous chemical plating, polycrystalline material growth, etc., can solve the problem of less energy to prepare silicon carbide bulk materials, and avoid clogging and reduce Accumulation, small particle effect

Pending Publication Date: 2020-01-03
安徽中飞科技有限公司
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the SiC mainly prepared at present is a silicon carbide film, and it is s

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Chemical vapor deposition method and device for preparing polycrystalline silicon carbide

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] This embodiment is an embodiment of the chemical vapor deposition method for preparing polycrystalline silicon carbide according to the present invention. Vacuum until the pressure is less than 5 Pa, then raise the temperature to 400-500°C within 2-4 hours, keep the temperature for 4-6 hours, then raise the temperature to 1100°C within 4-10 hours, keep the temperature for 1-2 hours, and then pass in argon until the pressure is stable and maintained at 20000±100Pa, and then pass the mixed gas of argon, hydrogen and methyltrichlorosilane to deposit for 200h and control the pressure of the chemical vapor deposition chamber to 20000±100Pa. Internally cool down to 700-800°C, keep warm for 4-6 hours, and then cool down to room temperature within 40-60 hours to obtain block polycrystalline silicon carbide, in which argon, hydrogen and methyltrichlorosilane are mixed in argon and The volume ratio of hydrogen is argon:hydrogen=1:2.

Embodiment 2

[0033] This embodiment is an embodiment of the chemical vapor deposition method for preparing polycrystalline silicon carbide according to the present invention. In this method, the volume ratio of argon to hydrogen in the mixed gas of argon, hydrogen and methyltrichlorosilane is argon: Except hydrogen=1:1.2, others are all identical with embodiment 1. Compared with Example 1, the polycrystalline silicon carbide obtained in Example 2 is looser and rougher.

Embodiment 3

[0035] This embodiment is an embodiment of the chemical vapor deposition method for preparing polycrystalline silicon carbide according to the present invention. In this method, the volume ratio of argon to hydrogen in the mixed gas of argon, hydrogen and methyltrichlorosilane is argon: Except hydrogen=1:3, others are all identical with embodiment 1. Compared with Example 1, the polycrystalline silicon carbide obtained in Example 3 is smoother and denser.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a chemical vapor deposition method and device for preparing polycrystalline silicon carbide, and belongs to the technical field of chemical vapor deposition. The method comprises the steps: raising the temperature of a chemical vapor deposition chamber to 400-500 DEG C within 2-4 h, and carrying out heat preservation for 4-6 h; raising the temperature to 1100-1500 DEG C within 4-10 h, and carrying out heat preservation for 1-2 h; then carrying out chemical vapor deposition, cooling to 700-800 DEG C within 30-55 h, and carrying out heat preservation for 4-6 h, and coolingto room temperature within 40-60 h, so as to ensure that the obtained silicon carbide product is complete, free of cracking, higher in purity, flatter and smoother in surface and smaller in particlesize. The deposition chamber is divided into the chemical vapor deposition chamber and a dust collection chamber by a partition plate with holes; a gas inlet of the chemical vapor deposition chamber and a gas outlet of the dust collection chamber are positioned above the holes, so airflow flows in the chamber in a Z-shaped mode, the walking path and the retention time of the airflow in the chambers are prolonged, the decomposition degree of methyl trichlorosilane is increased, the yield is increased, meanwhile, methyl trichlorosilane entering a rear-end gas outlet pipeline is reduced, pipelineblockage is avoided, and production is guaranteed to be smoothly carried out.

Description

technical field [0001] The invention belongs to the technical field of chemical vapor deposition, and in particular relates to a chemical vapor deposition method and device for preparing polycrystalline silicon carbide. Background technique [0002] In the semiconductor electronics industry in recent years, SiC (silicon carbide) has attracted great interest, and it is a good candidate material for semiconductor devices used in some extreme conditions, such as high temperature and radiation environments, high power applications, High thermal power dissipation, etc. SiC ceramic materials have many excellent physical and chemical properties, such as high specific strength, high specific modulus, low density, high hardness, high thermal conductivity, low thermal expansion coefficient, corrosion resistance, oxidation resistance, etc., so they are widely used in high temperature structural materials. favor. [0003] There are many methods for preparing SiC ceramics, such as pres...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C30B28/14C30B29/36C23C16/455C23C16/32
CPCC23C16/325C23C16/455C30B28/14C30B29/36
Inventor 胡丹于金凤朱刘
Owner 安徽中飞科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap