A method for preparing silicon carbide single crystal by continuing a single growth center
A technology of silicon carbide single crystal and central silicon carbide, which is applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., to achieve the effect of improving crystal quality, ensuring uniformity and stability, and reducing dislocation defect density
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Embodiment 1
[0050] (1) Screen out a 4-inch 4H crystalline silicon carbide single crystal with a single growth center grown by a conventional growth method, with a crystal convexity of 4mm, and cut the growth front of the screened silicon carbide single crystal to make a wafer, The growth front containing a single growth center is protected by curing glue to prevent damage to its natural growth surface during subsequent processing, and then the cut surface is ground and polished to make the surface roughness less than 1 μm. The wafer is cleaned and packaged for later use.
[0051] (2) Put the high-purity silicon carbide powder into the graphite barrel, and the volume of the charge accounts for about 1 / 2 of the barrel volume.
[0052] (3) Take out a piece of the wafer prepared in step (1), and stick it tightly with the graphite cover through the adhesive. The surface roughness of the graphite cover pasted with the seed crystal is 10 μm, and the seed crystal cover button On the graphite cru...
Embodiment 2
[0057] (1) Screen out a 4-inch 4H crystalline silicon carbide single crystal with a single growth center grown by a conventional growth method, with a crystal convexity of 4mm, and cut the growth front of the screened silicon carbide single crystal to make a wafer, The growth front containing a single growth center is protected by curing glue to prevent damage to its natural growth surface during subsequent processing, and then the cut surface is ground and polished to make the surface roughness less than 1 μm. The wafer is cleaned and packaged for later use.
[0058] (2) Put the high-purity silicon carbide powder into the graphite barrel, and the volume of the charge accounts for about 1 / 2 of the barrel volume.
[0059] (3) Take out a piece of the wafer prepared in step (1), and stick it tightly with the graphite cover through the adhesive. The surface roughness of the graphite cover pasted with the seed crystal is 10 μm, and the seed crystal cover button On the graphite cru...
Embodiment 3
[0063] (1) Screen out a 4-inch 4H crystalline silicon carbide single crystal with a single growth center grown by a conventional growth method, with a crystal convexity of 5 mm, and cut the growth front of the screened silicon carbide single crystal to make a wafer, The growth front containing a single growth center is protected by curing glue to prevent damage to its natural growth surface during subsequent processing, and then the cut surface is ground and polished to make the surface roughness less than 1 μm. The wafer is cleaned and packaged for later use.
[0064] (2) Put the high-purity silicon carbide powder into the graphite barrel, and the volume of the charge accounts for about 1 / 2 of the barrel volume.
[0065] (3) Take out a piece of the wafer prepared in step (1), and stick it tightly with the graphite cover through the adhesive. The surface roughness of the graphite cover pasted with the seed crystal is 10 μm, and the seed crystal cover button On the graphite cr...
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Abstract
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