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Method for preparing large-area continuous single-layer monocrystal graphene film

A technology of single crystal graphene and graphene, which is applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., and can solve problems such as affecting electron transmission and graphene film damage

Active Publication Date: 2020-01-17
INST OF CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it can be concluded from experiments that a large amount of silicon oxide compounds will adhere to the surface of copper foil, which will damage the graphene film.
In addition, small double-layer nucleation sites are also introduced during the growth process, resulting in the existence of many double-layer islands after film formation, affecting electron transport.

Method used

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  • Method for preparing large-area continuous single-layer monocrystal graphene film
  • Method for preparing large-area continuous single-layer monocrystal graphene film
  • Method for preparing large-area continuous single-layer monocrystal graphene film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] First, prepare the single crystal copper (111) surface

[0053]In the first step, the 100 μm thick commercial copper foil (purity 99.9%) is cut into a size of about 4cm × 6cm, and electrochemically polished in an ethanol / phosphoric acid system (wherein, the specific composition of the polishing solution is: deionized water ( mL), phosphoric acid (mL), ethanol (mL), isopropanol (mL) and urea (g) were mixed according to the ratio of 250:125:125:25:4; the condition of electrochemical polishing was: the holding voltage was 5V, the current is 2A, and the polishing time is 3min.) Wash with deionized water to remove residual polishing liquid on the surface, and blow dry with nitrogen.

[0054] In the second step, the copper foil obtained in the first step is placed in a high-temperature tube furnace, and 200 sccm of argon gas and 100 sccm of hydrogen gas are introduced to start heating. The temperature of the tube furnace was raised to 1075°C, and the heating time was 45 minu...

Embodiment 2

[0060] Embodiment 2, verification of single crystal properties of graphene film

[0061] In order to verify the single crystallinity of the obtained graphene film, the judgment of the same orientation ratio of graphene islands before film formation and the experiment of local etching of the film after film formation were carried out. The results were respectively obtained by Figure 9 and Figure 10 exhibit. In the first step in this embodiment, the growth time is shortened from 1h to 40min after feeding methane, and the Figure 9 middle result. In this operation step, after the growth is over, keep the flow rate of argon and hydrogen constant, turn off methane, keep the temperature constant for 5 minutes, and then cool down naturally to obtain Figure 10 in the data. exist Figure 9 In , most of the graphene islands have the same orientation, which means that they have the same boundary pointing in the same direction, and all graphene islands are hexagonal single crystal...

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Abstract

The invention discloses a method for preparing a large-area continuous single-layer monocrystal graphene film. The method comprises the following steps: performing electrochemical polishing on monocrystal copper so as to obtain a monocrystal copper substrate, and further performing graphene growth on the monocrystal copper substrate, so as to obtain the continuous monocrystal graphene film. At a high temperature, a great number of silica compounds are adhered to a metallic copper surface, so that growth of graphene can be serious affected, the substances can be removed through electrochemicalpolishing, and the copper surface can be smooth and clean; and furthermore, graphene can be grown with the monocrystal copper, then single-layer graphene islands with the same orientation can be obtained, and the continuous single-layer monocrystal graphene film can be obtained after the graphene islands are connected.

Description

technical field [0001] The invention relates to a method for preparing a large-area continuous single-layer single-crystal graphene film. Background technique [0002] Graphene is a two-dimensional atomic crystal with a hexagonal honeycomb structure and a thickness of one atomic layer. It was prepared in 2004 by the mechanical exfoliation method jointly by physicists Andre Geim and Konstantin Novoselov of the University of Manchester in the United Kingdom, and has since attracted widespread attention from scientists around the world. Graphene has unique and excellent properties, including good electrical and thermal conductivity, excellent mechanical properties and light transmittance, etc. These properties make it widely used in fields such as field effect transistors, flexible transparent electrodes, supercapacitors, and graphene paper. application prospects. [0003] At present, the main methods for preparing graphene are: mechanical exfoliation method, SiC epitaxial gr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/18C30B29/02C25F3/22
CPCC25F3/22C30B25/186C30B29/02
Inventor 武斌张家宁刘云圻
Owner INST OF CHEM CHINESE ACAD OF SCI