Gallium oxide semiconductor structure, mosfet device and preparation method

Abstract

The invention provides a gallium oxide semiconductor structure, an MOSFET device and a preparation method. The gallium oxide semiconductor structure comprises a silicon substrate, a dielectric layer and a gallium oxide film, and is characterized in that a gallium oxide single crystal wafer is bonded with a silicon substrate with high thermal conductivity through the dielectric layer with a high dielectric constant, the adopted method is mature in bonding technology, the dielectric layer can prevent electrons from migrating to the substrate, and the problem that the performance of the device isreduced in a high-temperature environment can be effectively solved, so that the gallium oxide semiconductor structure with high thermal conductivity, high breakdown voltage resistance and stable performance at high temperature can be prepared. According to the invention, the problems of poor thermal conductivity of the gallium oxide homogeneous substrate, low breakdown voltage resistance of thegallium oxide and the silicon substrate, immature bonding technology of the gallium oxide and the silicon oxide substrate and the like are solved, the performance and the design flexibility of the gallium oxide device are greatly improved, and the most important silicon substrate in the industry is adopted, so that the gallium oxide semiconductor structure has great significance for rapid development of the gallium oxide device.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a gallium oxide semiconductor structure, a MOSFET device and a preparation method. Background technique [0002] The third generation of wide bandgap semiconductors (bandgap E g >2.3eV) materials, including silicon carbide, zinc oxide, gallium nitride, gallium oxide, etc., due to the advantages of high breakdown voltage, high electron mobility, good thermal stability, and strong radiation resistance, more and more are applied to optoelectronic devices. [0003] Gallium oxide, as the third-generation wide bandgap semiconductor material, has a large band gap (4.5eV ~ 4.9eV), which is more than 4 times that of Si, higher than zinc oxide 3.24eV, gallium nitride 3.4eV, and has It has the advantages of strong breakdown field, and its Baliga figure of merit is four times that of GaN material and ten times that of SiC material, which is currently the most researched materi...

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Problems solved by technology

[0007] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a gallium oxide semiconductor structure, a MOSFET device and a preparation method for solving the problem in the prior art when the gallium oxide semiconductor structure is prepared by epitaxy. The problem that thermally conductive heterogeneous substrates cannot deposit high-quality gallium oxide films

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