Deep hole superlattice filling method based on electrochemical deposition

Abstract

The invention discloses a deep hole superlattice filling method based on electrochemical deposition. The method comprises the following steps: S1, preparing a conductive substrate; S2, preparing an insulating layer; S3, preparing a deep hole; S4, preparing a reaction solution, wherein two different electrolytes are mixed in the reaction solution; S5, carrying out the electrochemical deposition inthe deep hole from bottom to top, adjusting the deposition parameters, alternately depositing a first phase change material layer and a second phase change material layer in the deep hole, and forminga superlattice structure; S6, preparing an upper electrode. According to the method, the deep hole with the nanoscale aperture is etched through the micro-nano machining technology, and then the electrochemical deposition method is used for quickly and effectively filling the deep hole; the nano phase-change material can grow from the bottom of the nano hole, the sulfur phase-change material canbe filled in the small hole with the ultra-large depth-to-width ratio, and the growth of the material can be accurately regulated and controlled by regulating and controlling deposition parameters.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices and memories, and in particular relates to a deep hole superlattice filling method based on electrochemical deposition. Background technique [0002] The traditional phase-change memory (PCM) has gradually been unable to meet the demand for high-capacity storage in the era of big data. Whether it is the three-dimensional stacking of PCM or the continuous reduction of device size, it is to improve storage density and reliability. However, with the advancement of process nodes, not only the increasing aspect ratio of the device structure makes it difficult to fill deep holes in the process, but also large-scale integration needs to rely on fast and effective deep hole filling processes. [0003] Although advanced photolithography processes can carve nano-aperture patterns, commonly used dry etching processes such as plasma etching, ion beam etching, and reactive ion etching methods c...

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Problems solved by technology

[0005] Aiming at at least one of the above defects or improvement needs of the prior art, especially the clogging problem existing in the existing filling method, the present invention provides a method for reusing deep holes with nanoscale apertures etched by micro-nano processing technology. The method of electrochemical deposition is a process method for quickly and effectively filling deep holes, which can grow nano-phase change materials from the bottom of nano-holes, and can realize ultra-large aspect ratio small holes for filling chalcogenide phase-change materials

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