Preparation method of light absorption enhanced perovskite solar cell
A solar cell and perovskite technology, applied in the field of solar cells, can solve the problems of expensive materials and high energy consumption of the support layer preparation process
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[0030] The invention provides a kind of preparation method of perovskite solar cell, comprising the following steps:
[0031] (1) The conductive substrate is ultrasonically cleaned with detergent, acetone, isopropanol, ethanol and deionized water in sequence, and then dried with nitrogen to obtain a pretreated substrate;
[0032] (2) spin coating the zinc oxide precursor solution on the surface of the pretreated substrate to form a zinc oxide electron transport layer;
[0033] (3) self-assembling and depositing silicon dioxide nanospheres on the surface of the zinc oxide electron transport layer to form a silicon dioxide photonic crystal support layer;
[0034] (4) Deposit PbI on the silicon dioxide photonic crystal support layer 2 The film was post-soaked in an isopropanol solution containing ammonium chloride and methylammonium iodide, and then annealed to form CH 3 NH 3 PB 3 Perovskite light-absorbing layer;
[0035] (5) In the CH 3 NH 3 PB 3 The hole transport laye...
Embodiment 1
[0082] The preparation method was the same as that of the comparative example, the only difference being that the silicon dioxide photonic crystal support layer was prepared by using the particle dispersion liquid with a diameter of 240 nanometers. Silica photonic crystals were deposited on the ZnO electron transport layer, and 100 μL of the dispersion liquid was spin-coated at a speed of 3000 rpm / min for 30 s; then annealed on a heating plate at 80° C. for 10 min. A silicon dioxide photonic crystal support layer is obtained. Then a perovskite solar cell was prepared on the silicon dioxide support layer by the same preparation method as the comparative example.
[0083] Carry out J-V test to the perovskite solar cell prepared in embodiment 1, the photoelectric conversion efficiency of device is 17%, and current density is 21.5mA / cm 2 , the open circuit voltage is 1.08V, and the fill factor is 73.82%.
[0084] For the CH prepared in comparative example and embodiment 1 3 NH ...
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