Tantalum-silicon alloy sputtering target material and preparation method thereof

Abstract

The invention relates to a tantalum-silicon alloy sputtering target material and a preparation method thereof. The preparation method comprises the steps: (1) tantalum powder and silicon powder are mixed; (2) a mixture is loaded into a mold, and the mold is sealed; (3) the sealed mold is subjected to cold isostatic pressing treatment, and a tantalum-silicon blank is obtained; (4) the obtained tantalum-silicon blank is subjected to degassing treatment; (5) a degassed casing is subjected to hot isostatic pressing treatment at 1050-1350 DEG C, and a tantalum-silicon alloy sputtering target material crude product is obtained; and (6) the tantalum-silicon alloy sputtering target material is obtained by machining. According to the preparation method, oxidation of the silicon powder is effectively prevented, the product purity is guaranteed, the prepared tantalum-silicon alloy sputtering target material can further reach the density of 99% or above, the requirements of uniform density and internal organization structure of the tantalum-silicon alloy sputtering target material are met, a more excellent performance guarantee is provided for subsequent sputtering use, and the characteristicsof simple process, convenient operation and short production cycle are achieved.

Description

technical field [0001] The invention relates to the field of target materials and target material preparation, in particular to a tantalum-silicon alloy sputtering target material and a preparation method thereof. Background technique [0002] Physical vapor deposition (Physical Vapor Deposition, PVD) refers to the use of low-voltage, high-current arc discharge technology under vacuum conditions to use gas discharge to evaporate the material source and ionize both the evaporated substance and the gas, and then pass The acceleration of the electric field causes the evaporated substance and its reaction product to deposit on the workpiece to form a thin film with a special function. PVD technology is the core technology of various industries such as semiconductor chip manufacturing, solar energy industry, and LCD manufacturing industry. The main methods are vacuum evaporation, arc plasma plating, ion coating, molecular beam epitaxy and sputtering coating, etc. [0003] Sputte...

AI Technical Summary

Problems solved by technology

Although this preparation method simplifies the process and is easy to operate, there is still no powder mixing process for non-metallic powders

[0007] Although the above preparation methods in the prior art all adopt the hot isostatic pressing process, because there is no powder mixing process for non-metallic powders, the purity requirements of the final sputtering target cannot be guaranteed, and because both the melting point of tantalum and silicon and the The physical properties such as specific gravity vary greatly, and higher requirements are put forward for process parameters such as powder mixing process, degassing treatment and hot isostatic pressing, which cannot meet the requirements of tantalum-silicon alloy sputtering targets for density and internal structure uniformity

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