Tantalum-silicon alloy sputtering target material and preparation method thereof

A sputtering target, tantalum-silicon technology, applied in the field of tantalum-silicon alloy sputtering target and its preparation, can solve the requirements of density and internal structure uniformity of tantalum-silicon alloy sputtering target, melting point and Physical properties such as specific gravity vary greatly, and the purity requirements of the final sputtering target cannot be guaranteed, so as to achieve uniform internal structure, reduce cost investment, and prevent direct contact.

Inactive Publication Date: 2020-04-03
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this preparation method simplifies the process and is easy to operate, there is still no powder mixing process for non-metallic powders
[0007] Although the above preparation methods in the prior art all adopt the hot isostatic pressing process, because there is no powder mixing process for non-metallic powders, the purity requirements of the final sputtering target cannot be guarantee...

Method used

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  • Tantalum-silicon alloy sputtering target material and preparation method thereof

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preparation example Construction

[0070] figure 1 A flowchart showing a method for preparing a tantalum-silicon alloy sputtering target provided by the present invention specifically includes the following steps:

[0071] (1) tantalum powder and silicon powder are mixed;

[0072] (2) the mixed tantalum-silicon powder of step (1) is molded and sealed;

[0073] (3) carrying out cold isostatic pressing to the mold after step (2) sealing to obtain a tantalum-silicon blank;

[0074] (4) passing the tantalum-silicon blank obtained in step (3) through a welding sheath, and then carrying out degassing treatment;

[0075] (5) hot isostatic pressing the sheath after degassing in step (4) at 1050-1350° C. to obtain a crude tantalum-silicon alloy sputtering target;

[0076] (6) Machining the crude tantalum-silicon alloy sputtering target obtained in step (5) to obtain a tantalum-silicon alloy sputtering target;

[0077] (7) The tantalum-silicon alloy sputtering target obtained in step (6) is subjected to size detectio...

Embodiment 1

[0081] This embodiment provides a method for preparing a tantalum-silicon alloy sputtering target, comprising the following steps:

[0082] (1) Put tantalum powder and silicon powder into the V-type powder mixer with polyurethane lining according to the atomic ratio of Si(at%)=50%, and under the protection of argon gas with a pressure of 0.04MPa, the Mix at a mixing rate of min for 36 hours. During the mixing period, every 6 hours, stop the machine and beat the V-shaped mixer with a rubber hammer;

[0083] (2) After putting the tantalum silicon powder mixed in step (1) into the rubber sleeve mould, tamp it with a tool, and then seal it;

[0084] (3) Put the rubber sleeve mold sealed in step (2) into a cold isostatic pressing machine, pressurize to 200MPa and keep the pressure for 15min for cold isostatic pressing to obtain a tantalum-silicon blank;

[0085] (4) Put the tantalum silicon blank obtained in step (3) into a stainless steel sheath, use argon arc welding to weld the...

Embodiment 2

[0091] This embodiment provides a method for preparing a tantalum-silicon alloy sputtering target, comprising the following steps:

[0092] (1) Put tantalum powder and silicon powder into the V-type powder mixer with polyurethane lining according to the atomic ratio of Si(at%)=50%. Under the protection of argon gas with a pressure of 0.05MPa, the The mixing rate of min was mixed for 20 hours, and there was no shutdown or beating treatment during the mixing period;

[0093] (2) After putting the tantalum silicon powder mixed in step (1) into the rubber sleeve mould, tamp it with a tool, and then seal it;

[0094](3) Put the rubber sleeve mold sealed in step (2) into a cold isostatic pressing machine, pressurize to 160MPa and hold the pressure for 20min to carry out cold isostatic pressing to obtain a tantalum silicon blank;

[0095] (4) Put the tantalum silicon blank obtained in step (3) into a stainless steel sheath, use argon arc welding to weld the stainless steel cover pla...

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Abstract

The invention relates to a tantalum-silicon alloy sputtering target material and a preparation method thereof. The preparation method comprises the steps: (1) tantalum powder and silicon powder are mixed; (2) a mixture is loaded into a mold, and the mold is sealed; (3) the sealed mold is subjected to cold isostatic pressing treatment, and a tantalum-silicon blank is obtained; (4) the obtained tantalum-silicon blank is subjected to degassing treatment; (5) a degassed casing is subjected to hot isostatic pressing treatment at 1050-1350 DEG C, and a tantalum-silicon alloy sputtering target material crude product is obtained; and (6) the tantalum-silicon alloy sputtering target material is obtained by machining. According to the preparation method, oxidation of the silicon powder is effectively prevented, the product purity is guaranteed, the prepared tantalum-silicon alloy sputtering target material can further reach the density of 99% or above, the requirements of uniform density and internal organization structure of the tantalum-silicon alloy sputtering target material are met, a more excellent performance guarantee is provided for subsequent sputtering use, and the characteristicsof simple process, convenient operation and short production cycle are achieved.

Description

technical field [0001] The invention relates to the field of target materials and target material preparation, in particular to a tantalum-silicon alloy sputtering target material and a preparation method thereof. Background technique [0002] Physical vapor deposition (Physical Vapor Deposition, PVD) refers to the use of low-voltage, high-current arc discharge technology under vacuum conditions to use gas discharge to evaporate the material source and ionize both the evaporated substance and the gas, and then pass The acceleration of the electric field causes the evaporated substance and its reaction product to deposit on the workpiece to form a thin film with a special function. PVD technology is the core technology of various industries such as semiconductor chip manufacturing, solar energy industry, and LCD manufacturing industry. The main methods are vacuum evaporation, arc plasma plating, ion coating, molecular beam epitaxy and sputtering coating, etc. [0003] Sputte...

Claims

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Application Information

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IPC IPC(8): C23C14/34B22F3/04B22F3/15B22F1/00
CPCB22F1/0003C23C14/3414B22F3/04B22F3/15B22F1/14
Inventor 姚力军潘杰边逸军王学泽马国成
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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