Copper film alkaline polishing solution for low-technology node copper wiring

A technology of copper wiring and polishing liquid, which is applied in the field of copper film alkaline polishing liquid for copper wiring of low-tech nodes, can solve the problems of high R&D and production costs, and can not reduce the removal rate, and achieve low copper surface roughness and high removal rate Slow, fast removal effect

Pending Publication Date: 2020-04-10
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the copper film alkaline polishing solution for low-tech node copper wiring cannot achieve the same low removal rate for two different barrier layer materials, cobalt or ruthenium, resulting in high R&D and production costs

Method used

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  • Copper film alkaline polishing solution for low-technology node copper wiring
  • Copper film alkaline polishing solution for low-technology node copper wiring
  • Copper film alkaline polishing solution for low-technology node copper wiring

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] 1. Material ratio, based on the total weight of the mixture as 100, and the percentage of each material, SiO 2 10% silica sol with a particle size of 70-90nm 0.1 glycine 3 hydrogen peroxide 0.1 fatty alcohol polyoxyethylene ether 0.1 chitosan 0.01 potassium hydroxide 1 deionized water 95.69

[0014] 2. Material source

[0015] (1), SiO 2 10% silica sol with a particle size of 70-90nm: commercially available, Xiaoli silica sol;

[0016] (2), glycine: commercially available, purity 99.99%;

[0017] (3), hydrogen peroxide: commercially available, mass fraction is 25%;

[0018] (4), fatty alcohol polyoxyethylene ether: commercially available, with a purity of 99.99%, produced by Tianjin Jingling Microelectronics Materials Co., Ltd.;

[0019] (5), chitosan: commercially available, purity 99.99%;

[0020] (6), potassium hydroxide: commercially available, purity 99.99%;

[0021] (7) Deionized water: self-made ultrapure water with a resistivity of 18MΩ*cm (25°C).

[0022...

Embodiment 2

[0033] 1. Material ratio, based on the total weight of the mixture as 100, and the percentage of each material, SiO 2 20% silica sol with a particle size of 70-90nm 0.5 glycine 2 hydrogen peroxide 0.3 fatty alcohol polyoxyethylene ether 0.3 chitosan 0.03 potassium hydroxide 2 deionized water 94.87

[0034] 2. Material source

[0035] (1), SiO 2 20% silica sol with a particle size of 70-90nm: commercially available, Xiaoli silica sol;

[0036] (2), glycine: with embodiment 1;

[0037] (3), hydrogen peroxide: with embodiment 1;

[0038] (4), fatty alcohol polyoxyethylene ether: with embodiment 1;

[0039] (5), chitosan: with embodiment 1;

[0040] (6), potassium hydroxide: with embodiment 1;

[0041] (7), deionized water: with embodiment 1.

[0042] 3. A method for preparing a copper film alkaline polishing solution for low-tech node copper wiring, comprising the following steps in turn:

[0043] (1), weigh SiO according to the proportion 2 20% silica sol with a particl...

Embodiment 3

[0053] 1. Material ratio, based on the total weight of the mixture as 100, and the percentage of each material, SiO 2 30% silica sol with a particle size of 70-90nm 1 glycine 1 hydrogen peroxide 0.5 fatty alcohol polyoxyethylene ether 0.5 chitosan 0.05 potassium hydroxide 3 deionized water 93.95

[0054] 2. Material source

[0055] (1), SiO 2 30% silica sol with a particle size of 70-90nm: commercially available, Xiaoli silica sol;

[0056] (2), glycine: with embodiment 1;

[0057] (3), hydrogen peroxide: with embodiment 1;

[0058] (4), fatty alcohol polyoxyethylene ether: with embodiment 1;

[0059] (5), chitosan: with embodiment 1;

[0060] (6), potassium hydroxide: with embodiment 1;

[0061] (7), deionized water: with embodiment 1.

[0062] 3. A method for preparing a copper film alkaline polishing solution for copper wiring of low-tech nodes, comprising the following steps in turn:

[0063] (1), weigh SiO according to the proportion 2 30% silica sol with a particl...

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Abstract

The invention discloses a copper film alkaline polishing solution for low-technology node copper wiring. The solution comprises, by weight, 0.1 -1% of 10-30% of silica sol with a SiO2 particle size of70-90nm, 1-3% of glycine, 0.1-0.5% of hydrogen peroxide, 0.1-0.5% of fatty alcohol-polyoxyethylene ether, 0.005-0.05% of chitosan and 0.1-5% of potassium hydroxide. Deionized water is added to prepare an alkaline dispersion liquid with a pH value of 9.5-10.5. The copper film alkaline polishing solution for low-technology node copper wiring has characteristics of high copper film material removalrate, low cobalt or ruthenium barrier layer material removal rate, low copper surface roughness after polishing, low cost and safe usage.

Description

technical field [0001] The invention relates to a copper film alkaline polishing solution for low-tech node copper wiring. Background technique [0002] With the continuous development of integrated circuits, the number of wiring layers in circuits is increasing, and the feature size of integrated circuits is also decreasing according to Moore's law. Due to its low resistivity, strong resistance to electromigration, and good stress migration performance, copper has replaced aluminum as an interconnection material for integrated circuits. However, when copper is used, it will expand into the silicon substrate and silicon dioxide medium, which will affect the loading of the device. Carrier lifetime and leakage current; and poor adhesion between copper and silicon dioxide dielectrics, copper lines are easy to fall off, so a barrier material needs to be introduced. The most studied new barrier materials are cobalt and ruthenium. The adhesion between cobalt or ruthenium and cop...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F3/04
CPCC23F3/04
Inventor 牛新环周佳凯杨程辉王如李云飞崔雅琪王治
Owner HEBEI UNIV OF TECH
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