A kind of perovskite solar cell without carrier transport layer and preparation method thereof
A solar cell and perovskite technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problem that two layers cannot be removed at the same time
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Embodiment 1
[0044] Embodiment 1 (named after Graded Pb / Sn)
[0045] A method for preparing a perovskite solar cell without a carrier transport layer, comprising the following steps:
[0046] Step 1. Soak the ITO substrate in an ethanol solution containing 5% sodium hydroxide for 30 minutes to reduce its surface work function; then ultrasonicate the ITO substrate through acetone, absolute ethanol and water for 20 minutes respectively, and then use nitrogen gas to The gun is blown dry and ready for use;
[0047] Step 2. preparation perovskite lead precursor solution: the KI-dimethyl sulfoxide (DMSO) doping liquid that concentration is 1mol / L is added the lead iodide-dimethylformamide (DMF that concentration is 1.3mol / L ) in the base solution, after mixing, heat and stir at 70°C until uniform, wherein the volume of the doping solution is 5% of the volume of the base solution;
[0048] Step 3. Preparation of perovskite formamidine iodine (FAI) precursor solution: mix 60mg of FAI powder with...
Embodiment 2
[0054] According to the steps of Example 1, the perovskite battery was prepared, only the substrate was replaced with an FTO substrate. Compared with the ITO substrate, the work function of FTO was inherently smaller, so the sodium hydroxide-ethanol solution immersion process was not required, and the other steps were not Change.
Embodiment 3
[0056] The perovskite battery was prepared according to the steps in Example 1, only the annealing temperature in step 6 was adjusted to 100° C., and other steps remained unchanged.
[0057] The annealing temperature determines the gradient size of the perovskite Sn-Pb gradient, the higher the temperature, the gradient will decrease due to ion diffusion. When the substrate is placed at 100 degrees Celsius, the Sn-richness of the upper surface of the film increases.
[0058] Devices with different structures refer to whether to choose to prepare hole transport layer and electron transport layer structures during preparation.
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