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A kind of intermediate phase for perovskite vapor phase growth and its preparation method and application

A technology of vapor phase growth and perovskite, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of low efficiency of solar cell devices, and achieve the purpose of promoting reaction rate, increasing grain size, and eliminating crystals. The effect of defects

Active Publication Date: 2021-10-29
WUHAN UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The prepared solar cell devices have low efficiencies

Method used

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  • A kind of intermediate phase for perovskite vapor phase growth and its preparation method and application
  • A kind of intermediate phase for perovskite vapor phase growth and its preparation method and application
  • A kind of intermediate phase for perovskite vapor phase growth and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Deposition of 200nmPbI on FTO substrate 2 Floor( figure 1In a), react with FAI / FACl (FAI:FACl=1:1) atmosphere, and then react with FAI / FACl (FAI:FACl=1:1) atmosphere at 170 o C, react for 40 minutes under 100Pa to generate FAPbI 3 perovskite thin film.

[0033] The results showed that PbI 2 FAPbCl can be generated with FACl atmosphere x I 3-x ( figure 1 In b) with FA 2 PbCl 4 ( figure 1 Middle c) Perovskite interphase, which can finally react with FAI to generate FAPbI 3 ( figure 1 Middle d) The target perovskite phase.

[0034] The FAPbI 3 The perovskite film is prepared into a battery device, and the intensity is 100mW / cm 2 The photoelectric performance was tested under the simulated solar energy, and the results showed that the solar cell obtained a short-circuit photocurrent density J sc =21.94mA / cm 2 , open circuit voltage V oc =1120mV, fill factor FF=0.757, photoelectric conversion efficiency η=18.6%; under positive sweep condition, J sc =21.88mA / ...

Embodiment 2

[0036] Preparation of perovskite solar cell devices, the structure of which is as follows figure 2 As shown, there are 1-6 layers from bottom to top, of which 1 is a transparent substrate (glass), 2 is a TCO conductive layer (FTO), 3 is an electron extraction layer (tin oxide), and 4 is an organic-inorganic hybrid perovskite layer (Cs x FA 1-x PbBr y I 3-y ), 5 is the hole extraction layer (Spiro-OMeTAD), 6 is the back electrode (gold). where Cs x FA 1-x PbBr y I 3-y The preparation process of the perovskite layer is: sequentially vapor-deposit 30nmCsBr and 200nmPbI on the tin oxide layer 2 (inorganic components), and then placed in a tube furnace, reacted with FAI / FACl mixed atmosphere (FAI:FACl=4:1) at 160°C, 100Pa for 1 hour to generate Cs x FA 1-x PbBr y I 3-y perovskite layer.

[0037] At an intensity of 100mW / cm 2 The photoelectric performance was tested under the simulated solar energy, and the results showed that the solar cell obtained a short-circuit p...

Embodiment 3

[0039] Using FAI / C 2 h 6 Preparation of FAPbI in OS compound atmosphere 3 film. Evaporate 100nmPbI on conductive substrate A 2 , and then react with FAI / DMF (FAI:DMF =20:1) atmosphere at 170°C, 50Pa for 30 minutes to generate FAPbI 3 perovskite thin film. The FAPbI 3 The perovskite film is prepared into a battery device, and the intensity is 100mW / cm 2 The photoelectric performance was tested under the simulated solar energy, and the results showed that the solar cell obtained a short-circuit photocurrent density J sc =22.52mA / cm 2 , open circuit voltage V oc = 1091mV, fill factor FF = 0.721, photoelectric conversion efficiency η = 17.71%; under positive sweep conditions, J sc =21.67mA / cm 2 , V oc =1.087mV, FF=0.731, η=17.21%.

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Abstract

The invention discloses an intermediate phase for vapor phase growth of perovskite and its preparation method and application. The intermediate phase for vapor phase growth of perovskite is generated by a B-type atmosphere and an inorganic component film; the B-type The atmosphere is CH 3 NH 3 Cl, CH(NH 2 ) 2 Cl, C 4 h 9 NH 3 I.C 4 h 9 NH 3 Br, C 4 h 9 NH 3 Cl, NH 4 Cl, NH 3 、CH 2 NH 2 COOH, H 2 O, C 2 h 6 OS, C 4 h 6 o 2 、CH 3 CH 2 OH, CH 4 N 2 One or more of O; the intermediate phase used for perovskite vapor phase growth is used to prepare organic-inorganic hybrid perovskite semiconductor film, which can promote the target perovskite inorganic component film and organic component atmosphere Reaction rate; inhibit the supersaturated phase formation of the target perovskite; improve the uniformity of the target perovskite film; eliminate the target perovskite crystal defect; increase the grain size of the target perovskite film.

Description

technical field [0001] The invention relates to the technical field of organic-inorganic hybrid perovskite semiconductor thin films, in particular to an intermediate phase used for vapor phase growth of perovskite and its preparation method and application. Background technique [0002] In recent years, organic-inorganic hybrid perovskite solar cell technology has developed rapidly. In just a few years, its highest photoelectric conversion efficiency has exceeded 25%, approaching the highest efficiency record of monocrystalline silicon cells. Not only that, the preparation process of organic-inorganic hybrid perovskite materials is simple and easy, and the components are cheap and easy to obtain. It is expected to realize ultra-low-cost solar cell products and promote the further development of green energy applications. [0003] At present, perovskite thin films in organic-inorganic hybrid perovskite solar cells are usually prepared by solution spin coating or blade coatin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/48
CPCH10K71/00H10K85/00H10K30/10Y02E10/549
Inventor 库治良彭勇黄福志程一兵
Owner WUHAN UNIV OF TECH
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