Method for preparing ZnO/TiO2 heterojunction thin-film material through spin-coating

A thin-film material and heterojunction technology, applied in chemical instruments and methods, catalyst activation/preparation, metal/metal oxide/metal hydroxide catalysts, etc., can solve the problems of poor light absorption, photoelectric catalytic activity and stability, Small specific surface area and other issues to achieve the effect of improving stability and weakening light corrosion

Active Publication Date: 2020-05-05
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this method improves the surface structure of ZnO, it cannot be used on TiO due to immersion in zinc acetate-ethanol solution. 2 The surface of the film is uniformly dispersed, resulting in the local accumulation of ZnO seeds on the TiO 2 The surface of the film cannot be uniformly dispersed, and finally ZnO in TiO 2 Thick core-shell structure ZnO / TiO is grown on the surface of the film 2 , the specific surface area of ​​the ZnO layer with this stacked structure is still small, the light absorption is poor, and the photoelectrocatalytic activity and stability are poor.

Method used

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  • Method for preparing ZnO/TiO2 heterojunction thin-film material through spin-coating
  • Method for preparing ZnO/TiO2 heterojunction thin-film material through spin-coating
  • Method for preparing ZnO/TiO2 heterojunction thin-film material through spin-coating

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Experimental program
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Embodiment 1

[0028] This embodiment specifically includes the following steps:

[0029] ① Preparation of TiO by hydrothermal method 2 Nanorod film: add 0.6mL tetrabutyl titanate to 30mL 1:1 aqueous solution of concentrated hydrochloric acid, stir rapidly for 2 hours to obtain a transparent solution; place the conductive glass in a hydrothermal kettle filled with the above tetrabutyl titanate solution 150°C for 12 hours, cooled, washed with water, dried, heated to 450°C at a rate of 1°C / min in a muffle furnace, and kept for 1 hour to obtain TiO 2 nanorod films.

[0030] ②In the prepared TiO 2 Spin-coat 10mM zinc acetate-ethanol solution on the nanorod film to prepare ZnO seeds; the spin-coating speed is 3000rpm, and the number of spin-coating is 8 times. After each spin-coating, place it on a hot plate at 150°C for heating 2min, then take it off, cool to room temperature, and do the next spin coating.

[0031] ③ After the spin coating is completed, place it on a hot plate at 450 ° C for...

Embodiment 2

[0051] Prepare TiO according to Example 1 2 Nanorod films, prepared TiO 2 Spin-coat 10mM zinc acetate-ethanol solution on the nanorod film to prepare ZnO seeds; the spin-coating speed is 2000rpm, and the number of spin-coating is 6 times. After each spin-coating, place it on a hot plate at 150°C for heating 2min, then take it off, cool to room temperature, perform the next spin coating until the spin coating is completed, place it on a hot plate at 450°C and heat it for 1h. 2 ZnO nanowires were grown on the surface of the nanorod film; subsequently, TiO with a ZnO seed layer 2 The film was placed in a mixed solution of 20mM zinc nitrate and hexamethylenetetramine, heated in an oven at 90°C for 4h to grow ZnO nanowires, then taken out and rinsed with deionized water several times, and then dried at 50°C for 1h. ZnO / TiO with bird's nest structure 2 Heterojunction thin film electrodes.

[0052] The ZnO / TiO of the bird's nest structure that this embodiment prepares 2 film in ...

Embodiment 3

[0054] Prepare TiO according to Example 1 2 Nanorod films, prepared TiO 2 Spin-coat 10mM zinc acetate-ethanol solution on the nanorod film to prepare ZnO seeds; the spin-coating speed is 4000rpm, and the number of spin-coating is 10 times. After each spin-coating, place it on a hot plate at 150°C for heating 2min, then take it off, cool to room temperature, and perform the next spin coating until the spin coating is completed, place it on a hot plate at 450°C and heat it for 1h. 2 ZnO nanowires were grown on the surface of the nanorod film; subsequently, TiO with a ZnO seed layer 2 The film was placed in a mixed solution of 5mM zinc nitrate and hexamethylenetetramine, heated in an oven at 90°C for 4h to grow ZnO nanowires, then taken out and rinsed with deionized water several times, and then dried at 50°C for 1h. ZnO / TiO with bird's nest structure on the surface 2 Heterojunction thin film electrodes.

[0055] The ZnO / TiO of the bird's nest structure that this embodiment p...

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Abstract

The invention discloses a method for preparing a ZnO/TiO2 heterojunction thin-film material through spin-coating. The preparation method comprises the following steps: controlling the spin-coating rotation speed and the spin-coating frequency of a spin-coating zinc acetate-ethanol solution to control the uniform distribution degree and density of ZnO seed crystals, and growing ZnO nanowires on theZnO seed crystals under hydrothermal conditions to prepare the ZnO/TiO2 heterogeneous material with a nest-shaped structure. The ZnO/TiO2 film obtained in the invention has the advantages of large specific surface area, high optical absorption performance, high photoelectric efficiency and high charge transfer efficiency, and can be widely used in the fields of photoelectrocatalysis for hydrogenproduction, photoelectrocatalytic degradation of organic matters and the like.

Description

technical field [0001] The invention relates to a technology in the field of photoelectric catalysis, in particular to a method for preparing ZnO / TiO by spin coating 2 A method for heterojunction thin film materials. Background technique [0002] Titanium dioxide (TiO 2 ) as a photoelectrocatalytic photoanode has the advantages of suitable conduction band / valence band positions, abundant reserves, low price, non-toxicity, and good stability. But TiO 2 The wide band gap energy (anatase ~ 3.2eV, rutile ~ 3.0eV) can only absorb ultraviolet light, and the kinetics of carrier separation and transport are very slow. In the prior art, zinc oxide (ZnO) is used to modify TiO 2 ZnO / TiO 2 Heterojunction film as an improved photoelectrode due to its higher electron mobility based on ZnO (ZnO nanowire: 1000cm 2 V s -1 ) and the potential for excellent photogenerated charge separation efficiency based on the good energy-level matching relationship between the two. [0003] Existi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/06B01J35/06B01J35/10B01J37/02C25B1/04C25B11/06A62D3/115A62D101/20
CPCB01J23/06B01J23/002B01J35/065B01J35/023B01J35/0033B01J35/004B01J35/1004B01J37/0219C25B1/04A62D3/115A62D2203/00A62D2203/02C25B1/55C25B11/091Y02E60/36
Inventor 周保学周廷生白晶李金花王蓬勃张博查丽娜
Owner SHANGHAI JIAO TONG UNIV
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