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Photoelectric device based on graphene/tungsten diselenide/tin diselenide laminated structure and preparation method thereof

A technology of tungsten diselenide and tin diselenide, which is applied in the direction of electrical components, semiconductor devices, circuits, etc., can solve the problems of reducing photocurrent and not fully meeting the responsivity requirements of optoelectronic devices, and achieve high photoresponsivity and sensitivity , excellent ohmic contact characteristics, simple preparation process

Active Publication Date: 2020-05-08
NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the above studies have improved the performance of optoelectronic devices to a certain extent, there are still some common problems, such as the formation of Schottky barriers easily when electrodes and two-dimensional materials, two-dimensional materials and two-dimensional materials are in contact, greatly Reduced photocurrent, etc. (Schottky W.Halbleitertheorie der sperrschicht[J].Naturwissenschaften,1938,26(52):843-843.), can not fully meet the requirements for the responsivity of photoelectric devices

Method used

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  • Photoelectric device based on graphene/tungsten diselenide/tin diselenide laminated structure and preparation method thereof
  • Photoelectric device based on graphene/tungsten diselenide/tin diselenide laminated structure and preparation method thereof
  • Photoelectric device based on graphene/tungsten diselenide/tin diselenide laminated structure and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0039] 1. Prepare photodetectors, the specific preparation steps are as follows:

[0040] 1) Substrate cleaning

[0041] Soak the silicon oxide-silicon substrate to be cleaned in acetone solution, isopropanone, and absolute ethanol for 5 minutes and ultrasonically clean it at 20KHz for 10 minutes. After cleaning, rinse it with deionized water, dry it with nitrogen gas, and set it aside.

[0042] 2) Preparation of layered materials

[0043] In this example, the three layered materials were prepared by mechanical exfoliation. The tungsten diselenide, tin diselenide and graphene layered materials to be peeled off are placed on the adhesive tape respectively, and the block material is pasted and peeled off repeatedly, so that it becomes a thinner layered sheet. The layered flakes on the tape were pasted on the silicon oxide-silicon substrate, compacted repeatedly, and the tape was slowly peeled off after standing for 5 minutes, so that the materials remained on the substrate, th...

Embodiment 2

[0057] The difference between this embodiment and Embodiment 1 is that the quartz glass 1 with a thickness of 0.6 mm is selected as the substrate, and the surface is covered with a boron nitride layer 2 with a thickness of 120 nm. On the boron nitride layer, a tin diselenide layer 3 with a thickness of 10 nanometers, a tungsten diselenide layer 4 with a thickness of 20 nanometers, and a graphene layer 5 with a thickness of 0.7 nanometers are stacked from bottom to top. The first metal electrode 6 and the second The metal electrode 7 is a gold electrode added with indium gallium alloy.

[0058] In this embodiment, a boron nitride layer with a thickness of 120 nm is stacked on a quartz substrate with a thickness of 0.6 mm to form the insulating layer 2 by using a mechanical transfer method. Electrodes were prepared by vapor-depositing InGa-metal alloys. That is, in an evaporation apparatus, the indium-gallium-metal alloy is used as the target material, and the indium-gallium-me...

Embodiment 3

[0064] In this embodiment, the difference from Embodiment 2 is that the mica with a thickness of 1 mm is selected as the substrate 1. Since the mica is an insulating substrate, the substrate 1 and the insulating layer 2 are solidly integrated in this embodiment. Made of mica. A tin diselenide layer 3 with a thickness of 8 nm, a tungsten diselenide layer 4 with a thickness of 17 nm, and a graphene layer 5 with a thickness of 1 nm are sequentially stacked on the substrate 1 / insulating layer 2 from bottom to top. The first metal electrode 6 and the second metal electrode 7 are indium gallium alloy, and its structure is as follows Figure 4 shown.

[0065] In this embodiment, the layered material and laminated structure are prepared by mechanical stripping method and mechanical transfer method respectively, and the first metal electrode 6 and the second metal electrode 7 are prepared by brushing liquid indium gallium alloy. The implementation steps are the same as in Example 1. ...

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Abstract

The invention provides a photoelectric device based on a graphene / tungsten diselenide / tin diselenide laminated structure and a preparation method thereof, and belongs to the technical field of semiconductor photoelectric detection. The photoelectric device structurally comprises a substrate layer, an insulating layer, a tin diselenide layer, a tungsten diselenide layer and a graphene layer from bottom to top in sequence; and two ends of the tin diselenide layer and the graphene layer are respectively connected with the metal electrodes. The photoelectric device is simple in structure, free ofgrid voltage regulation and control, high in photoresponsivity and gain and high in response speed.

Description

technical field [0001] The invention relates to the field of photoelectric sensors, in particular to a photoelectric device based on a graphene / tungsten diselenide / tin diselenide laminated structure and a preparation method thereof. Background technique [0002] Photodetectors are semiconductor devices that detect light signals through electrical processes. They can be divided into thermal detectors and photodetectors. At present, photodetectors based on the quantum photoelectric effect are mainly used in the market. Compared with the traditional photodetectors using bulk semiconductor heterojunctions or PN junctions, the research on two-dimensional materials such as graphene and MX2 has laid the foundation for ultra-thin photodetection devices. Due to the nanoscale thickness and high The light absorption rate and the two-dimensional material stack structure photosensor will bring about a huge improvement in scale and responsivity. [0003] Patent CN107749433 A designs a tw...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0216H01L31/0264H01L31/028H01L31/032H01L31/101H01L31/18
CPCH01L31/02161H01L31/0264H01L31/028H01L31/032H01L31/101H01L31/1013H01L31/18Y02P70/50
Inventor 周建新徐廉鹏何哲
Owner NANJING UNIV OF AERONAUTICS & ASTRONAUTICS
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