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A kind of solid-state dielectric film capacitor with high energy storage density and preparation method thereof

A high energy storage density, film capacitor technology, applied in the direction of film/thick film capacitors, electrolytic capacitors, fixed capacitor electrodes, etc. The effect of high dielectric constant, high breakdown electric field strength

Active Publication Date: 2021-08-03
HENAN POLYTECHNIC UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the process of preparing capacitors by this method, amorphous alumina film is used as the dielectric, and the dielectric constant of amorphous alumina film is relatively low, only about 8.0, which restricts the energy storage density of capacitors.

Method used

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  • A kind of solid-state dielectric film capacitor with high energy storage density and preparation method thereof
  • A kind of solid-state dielectric film capacitor with high energy storage density and preparation method thereof
  • A kind of solid-state dielectric film capacitor with high energy storage density and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] The solid film capacitor with high energy storage density prepared in this embodiment includes a substrate substrate, a bottom electrode, an aluminum oxide / titania composite dielectric film and an upper electrode. Capacitor cross section such as figure 1 As shown, in the figure, 1 is the upper electrode metal Ti film, 2 is the aluminum oxide / titania composite dielectric film, 3 is the bottom electrode metal Pt film, and 4 is the substrate silicon wafer.

[0024] The preparation of the high-density energy storage solid film capacitor comprises the following steps:

[0025] (1) adopt the method for magnetron sputtering to prepare Pt thin film on silicon substrate as bottom electrode;

[0026] (2) Dissolve 0.01mol of aluminum nitrate nonahydrate into 20ml of glacial acetic acid, heat and stir in a water bath at 70°C for 30min, then add 4ml of acetic anhydride, stir at 60°C for 30min, cool naturally to room temperature, and add appropriate amount of acetylacetone, Al 3+ T...

Embodiment 2

[0035] In this embodiment, the thickness of each layer of Ti metal film deposited by pulsed laser is increased, and the conditions of other experimental steps are the same as those in Embodiment 1. The composite dielectric film consists of 5 layers of aluminum oxide and 4 layers of titanium dioxide in sequence. The thickness of each layer of aluminum oxide film is 60nm, and the thickness of each layer of titanium dioxide film is 22.5nm. 390nm. The breakdown electric field strength of the dielectric film is 574MV / m, the dielectric constant is 17.6, and the energy storage density is as high as 25.7J / cm 3 .

Embodiment 3

[0037] In the present embodiment, adopt step (2) process preparation Al in embodiment 1 3+ Concentration is the aluminum oxide precursor of 0.3mol / L, all the other experimental procedure conditions are the same as embodiment 1, the composite dielectric thin film has 5 layers of aluminum oxide and 4 layers of titanium dioxide alternately successively to form, the thickness of each layer of the prepared aluminum oxide film is 40nm, titanium dioxide The thickness of each layer of the film is 15nm, and the thickness of the aluminum oxide / titania composite dielectric film in this example is about 260nm. The breakdown electric field strength of the dielectric film is 561MV / m, the dielectric constant is 18.2, and the energy storage density is as high as 25.4J / cm 3 .

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Abstract

The invention relates to a solid dielectric film capacitor with high energy storage density and a preparation method thereof. The capacitor comprises an upper electrode (1), a composite dielectric film (2), a bottom electrode (3) and a substrate substrate (4), wherein , the bottom electrode (3) is a layer of metal conductive film deposited on the substrate substrate (4), and the composite dielectric film (2) is aluminum oxide / alumina deposited on the surface of the bottom electrode (3). A titanium dioxide composite film is deposited on the composite dielectric film (2) as an upper electrode (1) to prepare a solid film capacitor with high energy storage density. Compared with the prior art, the invention adopts the self-repaired aluminum oxide / titania composite film as the dielectric, and has higher dielectric constant and breakdown electric field strength. The capacitor prepared by the invention has the advantages of high energy storage density, no electrolyte, safety and reliability, low cost and the like.

Description

technical field [0001] The invention belongs to the technical field of capacitor preparation, and in particular relates to a solid film capacitor with high energy storage density and a preparation method thereof. Background technique [0002] Microelectronics technology marked by integrated circuits is one of the most representative high-tech technologies in the information age. As the most commonly used components in electronic circuits, capacitors play an irreplaceable role in large-scale integrated circuits. With the miniaturization, portability and large-scale integration of electronic industrial products, higher requirements are put forward for capacitor components. Common capacitors can generally be divided into electrolyte capacitors and solid dielectric capacitors, but both capacitors have deficiencies. The liquid electrolyte of electrolytic capacitors will gradually evaporate or may leak during the operation of the capacitor, which brings hidden dangers to the saf...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G9/025H01G9/042H01G4/33H01G4/10H01G4/008
CPCH01G4/008H01G4/10H01G4/33H01G9/025H01G9/042
Inventor 胡保付孙轲汪舰杜保立刘丙国徐坚
Owner HENAN POLYTECHNIC UNIV
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