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P-type semiconductor low-resistance ohmic contact structure and preparation method thereof

An ohmic contact and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of P-GaN heavy doping difficulty, poor stability, and large contact resistance, so as to simplify the process flow and improve Thermal stability, the effect of avoiding damage to the device

Pending Publication Date: 2020-06-02
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Problems solved by technology

[0005] For the metal contact mechanism of P-GaN ohmic contact in the prior art, the contact resistance is large, the stability is poor, the heavy doping of P-GaN is difficult, and the work function of the transition metal nitride is so low that it cannot form an ohmic contact with P-GaN. The main purpose of the present invention is to provide a P-type semiconductor low-resistance ohmic contact structure and its preparation method, which can reduce the contact resistivity of the P-type semiconductor and improve the stability of the contact.

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  • P-type semiconductor low-resistance ohmic contact structure and preparation method thereof

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[0019] The embodiment of the present invention also provides a method for preparing a P-type semiconductor low-resistance ohmic contact structure, which includes: growing a metallic ternary transition metal nitride film on a P-type semiconductor substrate, and controlling the formed ternary transition metal nitride film. The metal nitride thin film is subjected to in-situ annealing treatment; wherein, the material of the ternary transition metal nitride thin film includes any one or a combination of TiBN, ZrBN, TiAlN, and ZrAlN.

[0020] In some more specific embodiments, the preparation method includes: firstly cleaning and surface-treating the P-type semiconductor substrate, and then growing the ternary transition metal nitride thin film on the surface of the P-type semiconductor substrate. The above mentioned surface treatment includes Ar plasma treatment.

[0021] In some more specific embodiments, the preparation method includes: using pulsed laser deposition technology, ...

Embodiment 1

[0048] The present invention provides a kind of preparation method of P-type semiconductor ohmic contact, and its specific steps are as follows:

[0049] Step 1: Using P-GaN material with a hole concentration of 6×10^(16)cm^(-3), ultrasonically clean the P-GaN substrate with acetone, ethanol, and deionized water for 5 minutes; use up N 2 Blow it dry and put it into the epitaxial growth chamber of the pulsed laser deposition system;

[0050] Step 2: The temperature of the substrate is raised to 650° C., and argon gas is introduced into the epitaxial growth chamber of the pulsed laser deposition system through the gas pipeline and the pressure is adjusted to 3 Pa. Argon gas is ionized by the discharge device of the pulsed laser system to generate argon plasma. Under the bombardment of argon plasma, the surface of the sample is treated to remove the oxide layer and other impurities on the surface;

[0051] Step 3: After 10 minutes of ionization, end the ionization and stop flo...

Embodiment 2

[0059] The present invention provides a kind of preparation method of P-type semiconductor ohmic contact, and its specific steps are as follows:

[0060] Step 1: Using P-GaN material with a hole concentration of 6×10^(16)cm^(-3), ultrasonically clean the P-GaN substrate with acetone, ethanol, and deionized water for 5 minutes; use up N 2 Blow it dry and put it into the epitaxial growth chamber of the pulsed laser deposition system;

[0061] Step 2: The temperature of the substrate is raised to 650° C., and argon gas is introduced into the epitaxial growth chamber of the pulsed laser deposition system through the gas pipeline and the pressure is adjusted to 3 Pa. Argon gas is ionized by the discharge device of the pulsed laser system to generate argon plasma. Under the bombardment of argon plasma, the surface of the sample is treated to remove the oxide layer and other impurities on the surface;

[0062] Step 3: After 10 minutes, end the ionization and stop flowing argon. I...

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Abstract

The invention discloses a P-type semiconductor low-resistance ohmic contact structure and a preparation method thereof. The P-type semiconductor low-resistance ohmic contact structure comprises a P-type semiconductor substrate and a metallic ternary transition metal nitride film formed on the P-type semiconductor substrate, wherein the material of the ternary transition metal nitride film comprises one of TiBN, ZrBN, TiAlN and ZrAlN. According to the preparation method provided by the embodiment of the invention, the high temperature resistance of the transition metal nitride is utilized to improve the thermal stability of the ohmic contact of the P-type semiconductor, which is of great significance to high-power devices; and secondly, B and Al elements are introduced into transition metalnitrides such as TiN and ZrN, the work function of the transition metal nitride film is improved, and ohmic contact with a P-type semiconductor material is achieved.

Description

technical field [0001] The invention particularly relates to a P-type semiconductor low-resistance ohmic contact structure and a preparation method thereof, belonging to the technical field of semiconductors. Background technique [0002] The third-generation wide-bandgap semiconductor materials represented by GaN have a series of advantages such as direct wide band gap, high electron mobility, high thermal conductivity, and high stability, so they have a wide range of applications and huge potential in the fields of optoelectronics and microelectronics. market expectation. At present, GaN-based LEDs have been widely used in fields such as full-color display, landscape lighting, signal lights, and backlights, while GaN-based white LEDs have the advantages of small size, long life, high luminous efficiency, and environmental protection, and are gradually developing. It has become a new generation of lighting source to replace fluorescent lamps and incandescent lamps; in addi...

Claims

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Application Information

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IPC IPC(8): H01L29/45H01L21/285
CPCH01L29/452H01L21/28575
Inventor 蒋春萍谷承艳林雨李玉雄刘峰峰隋展鹏
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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