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Fabry-Perot resonance near-infrared thermo-electron photoelectric detector and preparation method thereof

A photodetector and Fabro resonance technology, applied in the field of photodetectors, can solve the problems of low-cost preparation of near-infrared photodetection, and achieve the effects of promoting thermal electron production, high refractive index, and low near-infrared light absorption

Active Publication Date: 2020-06-02
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the defects in the prior art that molybdenum disulfide is difficult to realize near-infrared photodetection and thermionic photodetectors are difficult to manufacture in a large area and at low cost, Provides a Fabro resonance near-infrared thermionic photodetector capable of large-area and low-cost realization of near-infrared photodetection by coupling Fabro resonance with a low Schottky barrier formed by gold and molybdenum disulfide and its preparation method

Method used

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  • Fabry-Perot resonance near-infrared thermo-electron photoelectric detector and preparation method thereof
  • Fabry-Perot resonance near-infrared thermo-electron photoelectric detector and preparation method thereof
  • Fabry-Perot resonance near-infrared thermo-electron photoelectric detector and preparation method thereof

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preparation example Construction

[0049] The present invention also provides a method for preparing the above-mentioned Fabro resonance near-infrared thermionic photodetector, comprising such as figure 2 The following steps are shown:

[0050] S1 provides a base layer 1; the material of the base layer 1 is fused silica glass;

[0051] S2 forming an adhesive layer on the base layer 1;

[0052] The specific process is as follows: on the base layer 1, 10nm titanium is deposited by electron beam evaporation as the adhesion layer between the bottom reflector layer 2 and the base layer 1;

[0053] S3 forming a bottom mirror layer 2 made of gold on the adhesion layer;

[0054] The specific process is: depositing 100nm gold on the adhesion layer as the bottom reflector layer 2 of the Fabro cavity;

[0055] S4 Spin-coat photoresist on the bottom reflector layer 2 and expose it, and develop it with a developer to obtain a photoresist window-6 formed on the top of the bottom reflector layer 2;

[0056] The specific ...

Embodiment 1

[0077] The specific process of the present invention will now be described in detail through a specific embodiment.

[0078] A near-infrared thermionic photodetector based on Fabro resonance and molybdenum disulfide described in this embodiment is prepared as follows:

[0079] S1 provides a base layer 1, the base layer 1 material is fused silica glass;

[0080] S2 Depositing 10nm titanium on the substrate by electron beam evaporation as the adhesion layer between the bottom mirror layer 2 and the base layer 1;

[0081] S3 then continues to deposit 100nm gold as the bottom mirror layer 2 of the Fabro cavity;

[0082] S4 Use a spin coater to spin-coat S1818 photoresist on the substrate coated with the bottom mirror layer 2 made of metal, then use a custom-made mask plate for ultraviolet exposure, and finally obtain the required 5*5mm2 light by developing with a developer Resist window-6;

[0083] S5 prepares a sputtered layer-7 of molybdenum disulfide of 80 nm by magnetron sp...

Embodiment 2

[0100] The specific process of the present invention will now be described in detail through a specific embodiment.

[0101] A near-infrared thermionic photodetector based on Fabro resonance and molybdenum disulfide described in this embodiment is prepared as follows:

[0102] S1 provides a base layer 1, the base layer 1 material is fused silica glass;

[0103] S2 Depositing 10nm titanium on the substrate by electron beam evaporation as the adhesion layer between the bottom mirror layer 2 and the base layer 1;

[0104] S3 then continues to deposit 100nm gold as the bottom mirror layer 2 of the Fabro cavity;

[0105] S4 Use a spin coater to spin-coat S1818 photoresist on the substrate coated with the bottom mirror layer 2 made of metal, then use a custom-made mask plate for ultraviolet exposure, and finally obtain the required 5*5mm2 light by developing with a developer Resist window-6;

[0106] S5 prepares a sputtered layer-7 of 360nm molybdenum disulfide on the mirror surf...

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Abstract

The invention discloses a Fabry-Perot resonance near-infrared thermo-electron photoelectric detector and a preparation method thereof. The Fabry-Perot resonance near-infrared thermo-electron photoelectric detector comprises a substrate layer, a bottom reflector layer, a dielectric layer and a top reflector layer which are stacked in sequence, wherein counter electrode layers are arranged on the upper surface of the dielectric layer and the side surface of the top reflector layer; the bottom reflector layer and the top reflector layer are made of gold; the dielectric layer is made of molybdenumdisulfide; and the counter electrode layer is made of indium tin oxide. The detection waveband of the photoelectric detector can be regulated and controlled by changing the thickness of the dielectric layer, and the use of molybdenum disulfide with a high refractive index can effectively reduce the longitudinal size of the detector and realize multiband photoelectric response, so that the application value of the thermo-electron detector in the fields of ultra-compact optical chips and multispectral imaging is improved. The photoelectric detector has the advantages of large area and low preparation cost. Due to the fact that Schottky barriers formed by gold and molybdenum disulfide are low, thermo-electron photoelectric response of any near-infrared waveband can be achieved.

Description

technical field [0001] The invention relates to the field of photoelectric detectors, in particular to a Fabro resonance near-infrared thermionic photoelectric detector and a preparation method thereof. Background technique [0002] The nonradiative decay of surface plasmons was once considered a parasitic process in plasmonic photonic devices. However, in recent years, thermal electrons generated by non-radiative decay have been widely used in photoelectric conversion devices such as photodetection, photovoltaics, surface imaging, and photocatalysis. As far as photodetection is concerned, hot electrons can be injected into the adjacent semiconductor conduction band through the Schottky barrier. Since the Schottky barrier is much lower than the intrinsic band gap of the semiconductor, it can obtain an optical transition outside the band gap, thereby Near-infrared photoelectric detection is realized. Nevertheless, very low injection of hot electrons, short lifetime, and rel...

Claims

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Application Information

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IPC IPC(8): H01L31/108H01L31/0232H01L31/18
CPCH01L31/108H01L31/02327H01L31/18Y02P70/50
Inventor 王志明朱奕松余鹏马翠苹
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA