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Gold-plated bonding aluminum wire and preparation method thereof

A technology for bonding aluminum and aluminum wires, applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, semiconductor devices, etc., can solve the problem of low tensile strength and heat resistance of bonded aluminum wires Poor surface cleanliness, reduced bonding strength, etc., to eliminate lead sagging and sagging, increase easy-to-clean features, and improve bonding strength

Active Publication Date: 2020-06-23
ZHEJIANG TONY ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a gold-plated aluminum bonding wire and its preparation method, in order to overcome the low reliability of the connection interface between the bonding aluminum wire and the plated noble metal electrode in the above-mentioned prior art, the tensile strength and the resistance of the bonding aluminum wire Low thermal properties cause device failure and poor surface cleanliness of bonding aluminum wires, thereby reducing the bonding strength

Method used

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  • Gold-plated bonding aluminum wire and preparation method thereof
  • Gold-plated bonding aluminum wire and preparation method thereof
  • Gold-plated bonding aluminum wire and preparation method thereof

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preparation example Construction

[0051] The present invention also provides a method for preparing gold-plated bonded aluminum wires, which realizes large-length drawing of gold-plated bonded aluminum wires by processing with a small area reduction rate and controlling the angle of the entrance zone, the length of the sizing zone and the angle of the exit zone of the mold. Eliminates the phenomenon that the gold-plated bonded aluminum wire is easy to break during the wire drawing process; at the same time, the gold-plated aluminum wire is processed with a mold with a small area reduction rate and optimized parameters to ensure that the surface of the gold-plated bonded aluminum wire has a good finish, effectively ensuring the bond bond strength during the bonding process.

[0052] The present invention provides a kind of preparation method of gold-plated bonding aluminum wire, and preparation method comprises the following steps:

[0053] S1. Weigh aluminum or aluminum-silicon alloy raw materials, place the r...

Embodiment 1

[0077] This embodiment provides a gold-plated aluminum bonding wire, which includes the following components in mass percentage, copper: 18%, nickel: 3%, gold: 5%, and the balance is aluminum: 74%.

[0078] The preparation method of gold-plated bonding aluminum wire in the present embodiment comprises the following steps:

[0079] S1. Take 74g of aluminum and place it in the crucible of the high-vacuum vertical-type intermediate frequency continuous casting machine. Vacuum the furnace of the high-vacuum vertical-type continuous casting machine. After the vacuum degree is higher than 2.0Pa, start to heat up, and the temperature rises to 380°C Finally, stop vacuuming and fill the high vacuum continuous casting machine with argon gas to a vacuum degree of 0.2MPa; then continue to heat up to 700°C, and fill the When the argon gas reaches 1.06 MPa, the traction mechanism is turned on for drawing casting, and the diameter of the obtained aluminum rod is 5 mm.

[0080] S2. Coat the ...

Embodiment 2

[0090] This embodiment provides a gold-plated aluminum bonding wire, which includes the following components in mass percentage, copper: 15%, nickel: 0.3%, gold: 1.2%, and the balance is aluminum: 83.5%.

[0091] The difference between the preparation method of the gold-plated aluminum bonding wire in this embodiment and the preparation method in Example 1 is that:

[0092] S1. Weigh 83.5g of aluminum to obtain an aluminum rod with a diameter of 6mm;

[0093] S2, the mass of coated copper foil is 15g;

[0094] S3, the area reduction rate in the drawing process is 12%, and drawn into a copper-clad aluminum wire with a diameter of 0.9mm;

[0095] S4, the mass of nickel plating is 0.3g, and the mass of gold plating is 1.2g;

[0096] S5, the area reduction rate in the micro-drawing process is 5%, and the micro-gold-plated aluminum wire with a diameter of 0.1 mm is obtained by drawing;

[0097] S6. The area reduction rate in the ultra-fine drawing process is 4%, and a gold-plate...

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Abstract

The invention provides a gold-plated bonding aluminum wire and a preparation method thereof. The gold-plated bonding aluminum wire comprises the following components in percentage by mass: 15%-20% ofcopper, 0.3%-5% of nickel or 0.3%-6.5% of silver, 1.2%-7.5% of gold and the balance of aluminum or aluminum-silicon alloy. The preparation method comprises the steps of preparing an aluminum rod or analuminum-silicon alloy rod, coating copper, performing drawing, performing nickel plating or silver plating, performing gold plating, and finally performing fine drawing, ultra-fine drawing and heattreatment to prepare the gold-plated bonding aluminum wire. The gold-plated bonding aluminum wire has the characteristics of high strength and high reliability, application of an IGBT device is met, large-length drawing of the gold-plated bonding aluminum wire is achieved by adopting small area reduction rate machining and controlling the angle of an inlet area, the length of a sizing area and theangle of an outlet area of a die, and the phenomenon that the gold-plated bonding aluminum wire is prone to breakage in the wire drawing process is eliminated; and meanwhile, the surface of the gold-plated bonding aluminum wire is ensured to have good smoothness, and the bonding strength in the bonding process is effectively ensured.

Description

technical field [0001] The invention belongs to the processing field of alloy materials, and in particular relates to a gold-plated bonding aluminum wire and a preparation method thereof. Background technique [0002] With the rapid development of high-speed railways, new energy vehicles and aerospace, the demand for IGBT (Insulated Gate Bipolar Transistor) power drive modules is increasing, and the quality and reliability of IGBT power drive modules are increasingly demanding. For the IGBT power module, its gate, collector, emitter, and the positive and negative electrodes of the diode chip are connected to the corresponding terminals through bonding aluminum wires, and the communication with the external circuit is realized through the terminals. Bonded aluminum wires can be divided into two types according to their thickness. The aluminum wire diameter is less than 100um is thin aluminum wire, and the aluminum wire diameter is between 100-500um is thick aluminum wire. The...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/49H01L21/48
CPCH01L24/45H01L24/43H01L2224/45034H01L2224/45124H01L2224/4321H01L2224/43825H01L2224/4382H01L2224/43848H01L2224/45147H01L2224/45144H01L2224/45155H01L2224/45573H01L2224/45647
Inventor 曹军
Owner ZHEJIANG TONY ELECTRONICS CO LTD
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