Physical cleaning method of silicon wafer

A technology for physical cleaning and silicon wafers, applied in liquid cleaning methods, cleaning methods and utensils, chemical instruments and methods, etc., can solve problems such as damage to silicon wafers, large loss of silicon wafers, and reduction of the use effect of silicon wafers. Effect of preventing sedimentation and aggregation

Active Publication Date: 2020-06-26
CHANGZHOU GREATOP NEW MATERIAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Traditional silicon wafer cleaning usually uses chemical cleaning liquid for cleaning, but the chemical cleaning liquid in the prior art is easy to cause damage to the silicon wafer, and the cleaning effect is poor, and it is difficult to better remove the stains on the surface of the silicon wafer , a technical problem that reduces the effect of using silicon wafers
[0005] In addition, the application of diamond wire has brought opportunities and progress to the photovoltaic industry. It can achieve high-speed cutting, and the cutting speed can be doubled. However, if the diamond wire is too thick, it will cause a large loss of silicon wafers. The thickness of the line is directly related, the thicker the more natural loss

Method used

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  • Physical cleaning method of silicon wafer
  • Physical cleaning method of silicon wafer

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] (1) Use a Zeta potential meter to analyze that the charge carried by the silicon wafer substrate is a positive charge;

[0022] (2) Put the silicon wafer into the ultrasonic cleaning equipment, add cleaning solution, and clean the silicon wafer by ultrasonic vibration;

[0023] The cleaning solution is prepared by cleaning agent and water according to the mass ratio of 1:30.

[0024] The cleaning agent is composed of dodecylbenzenesulfonic acid, fatty alcohol polyoxyethylene ether, ethanol, sodium hexametaphosphate, disodium edetate and sodium gluconate, among which dodecylbenzenesulfonic acid, fat Alcohol polyoxyethylene ether, sodium hexametaphosphate, disodium edetate and sodium gluconate are composed according to the mass ratio: 5 parts of dodecylbenzenesulfonic acid, 5 parts of fatty alcohol polyoxyethylene ether, 10 parts of ethanol, 5 parts of sodium hexametaphosphate, 3 parts of disodium edetate and 3 parts of sodium gluconate.

[0025] The silicon wafer is a ...

Embodiment 2

[0027] (1) Use a Zeta potential meter to analyze that the charge carried by the silicon wafer substrate is a negative charge;

[0028] (2) Put the silicon wafer into the ultrasonic cleaning equipment, add cleaning solution, and clean the silicon wafer by ultrasonic vibration;

[0029] The cleaning solution is prepared by cleaning agent and water according to the mass ratio of 1:30.

[0030] The cleaning agent is composed of cetyl trimethyl quaternary ammonium bromide, fatty alcohol polyoxyethylene ether, ethanol carboxylic acid-sulfonate copolymer, disodium edetate and sodium gluconate, among which, cetyl Alkyl trimethyl quaternary ammonium bromide, fatty alcohol polyoxyethylene ether, ethanol, ethanol carboxylic acid-sulfonate copolymer, edetate disodium and sodium gluconate are composed according to the mass ratio: 16 5 parts of alkyl trimethyl quaternary ammonium bromide, 5 parts of fatty alcohol polyoxyethylene ether, 10 parts of ethanol, 5 parts of ethanol carboxylic aci...

Embodiment 3

[0032] (1) Use a Zeta potential meter to analyze that the charge carried by the silicon wafer substrate is a positive charge;

[0033] (2) Put the silicon wafer into the ultrasonic cleaning equipment, add cleaning solution, and clean the silicon wafer by ultrasonic vibration;

[0034] The cleaning solution is prepared by cleaning agent and water according to the mass ratio of 1:25.

[0035] The cleaning agent is composed of fatty alcohol acyl sulfate sodium, alkylphenol polyoxyethylene ether, ethanol, carboxymethyl cellulose, disodium ethylenediamine tetraacetate and sodium gluconate, of which 4 parts of fatty alcohol acyl sodium sulfate, alkyl 4 parts of phenol polyoxyethylene ether, 8 parts of ethanol, 5 parts of carboxymethyl cellulose, 4 parts of disodium edetate, and 4 parts of sodium gluconate.

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PUM

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Abstract

The invention relates to the technical field of silicon wafer cleaning, in particular to a physical cleaning method of a silicon wafer. Firstly, charges of a silicon wafer substrate are analyzed; andthen the silicon wafer is put into ultrasonic cleaning equipment, a cleaning solution is added, and the silicon wafer is cleaned by ultrasonic vibration. The ultrasonic physical method is used for cleaning the silicon wafer, and the charge interaction is used for removing pollutants on the surface of the silicon wafer, so that the damage caused by corrosive chemical cleaning methods of using sodium hydroxide and potassium hydroxide and the like is avoided. An surfactant and dispersant added in a cleaning agent can enable solid and liquid particles existing on the surface of the silicon wafer to be effectively dissolved in the cleaning solution, meanwhile, the particles are prevented from settling and agglomerating, and a stable suspension is formed. Therefore, in the cleaning process, thecleaning solution with the surfactant and the dispersant is added, and cleaning is carried out in cooperation with ultrasonic waves, so that the pollutants on the surface of the silicon wafer are effectively removed.

Description

technical field [0001] The invention relates to the technical field of silicon wafer cleaning, in particular to a physical cleaning method for silicon wafers. Background technique [0002] Due to its non-polluting, renewable, non-regional and other advantages, solar energy is more and more favored by people, and the solar energy industry has also been developed. With the maturity of the solar photovoltaic industry, the use of silicon wafers is also increasing. [0003] Silicon wafer is an important component in solar photovoltaic power generation equipment. Cleaning is one of the production processes of silicon wafer. The quality of cleaning has a great influence on the performance of silicon wafer. The main purpose of cleaning is to clean away the sand, residual cutting abrasives, metal ions and fingerprints generated during the cutting process, so that the surface of the silicon wafer can achieve technical indicators such as no corrosion, no oxidation, and no residue. ...

Claims

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Application Information

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IPC IPC(8): B08B3/08B08B3/12C11D1/83C11D3/06C11D3/20C11D3/22C11D3/33C11D11/00C11D1/22C11D1/72
CPCB08B3/08B08B3/12C11D1/83C11D3/201C11D3/06C11D3/33C11D3/221C11D1/22C11D1/72C11D2111/22
Inventor 张小飞
Owner CHANGZHOU GREATOP NEW MATERIAL CO LTD
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