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Preparation method for ITO ceramic target material with controllable grain size

A technology of ceramic target material and grain size, which is applied in metal material coating process, vacuum evaporation plating, coating, etc., can solve the problems of coarse grain and poor uniformity, and achieve controllable grain size and high resistivity. The effects of low and excellent electrical and mechanical properties

Active Publication Date: 2020-07-10
ZHENGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For this sintering process, if the maximum sintering temperature is lower than 1540°C, the ITO ceramic target cannot be completely densified, and there will still be many holes in its internal microstructure; and when the maximum sintering temperature is higher than 1600°C, grains will appear Coarse and poor uniformity and other defects

Method used

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  • Preparation method for ITO ceramic target material with controllable grain size
  • Preparation method for ITO ceramic target material with controllable grain size
  • Preparation method for ITO ceramic target material with controllable grain size

Examples

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preparation example Construction

[0034] In some embodiments, the method for preparing an ITO ceramic target with controllable grain size includes the following steps:

[0035] Slurry preparation step, that is, the mass fraction of In 2 o 3 Powder and SnO with a mass fraction of 10-3 2The powder is mixed with deionized water, diluent, binder and polymer materials in a sand mill to obtain an ITO ceramic slurry with a solid content of 70-80% and a viscosity of 120-300mpa.s material; the average particle size D50 of the mixed powder in the ITO ceramic slurry dispersed by a sand mill is controlled at 200-300nm; the mixed powder mentioned in this application refers to the 2 o 3 Powder and SnO 2 Powder mixture of powder; controlling the particle size of the mixed powder has a great influence on the performance of the product, especially the average particle size of the mixed powder is closely related to the grain size control of the ITO ceramic target, and the average particle size D50 is controlled at Between ...

Embodiment 1

[0057] In Example 1, the method for preparing an ITO ceramic target with controllable grain size includes:

[0058] Weigh 450g In respectively 2 o 3 Powder and 50g SnO 2 Powder; 9g polyacrylic acid, 2.5g gum arabic, 9g acrylamide and 125g deionized water to form a premix;

[0059] Add the two oxide powders and the premixed solution into the roller mill tank and mix them, mill for 1 hour, then transfer the slurry to a high-energy ball mill in a sand mill, and pump the vacuum degree of the ball mill tank to 9Pa to obtain the solid mass content of the powder It is 80% ITO slurry, and the average particle size distribution D50 of the mixed powder measured by the laser particle size analyzer is 200nm;

[0060] Inject the slurry into a gypsum mold and shape it under the condition of a pressure of 0.2MPa to obtain an ITO ceramic green body with a relative density of 62%;

[0061] Dry the ITO ceramic green body, and then put it into an integrated degreasing and sintering furnace. ...

Embodiment 2

[0064] In Example 2, the method for preparing an ITO ceramic target with controllable grain size includes:

[0065] Weigh 450g In respectively 2 o 3 Powder and 50g SnO 2 Powder; 9g polyacrylic acid, 2.5g gum arabic, 9g acrylamide and 125g deionized water to form a premix;

[0066]Add the two oxide powders and the premixed solution into the roller mill tank and mix them, mill for 1 hour, then transfer the slurry to a high-energy ball mill in a sand mill, and pump the vacuum degree of the ball mill tank to 9Pa to obtain the solid mass content of the powder It is 80% ITO slurry, and the average particle size distribution D50 of the mixed powder measured by the laser particle size analyzer is 200nm;

[0067] Inject the slurry into a gypsum mold and shape it under the condition of a pressure of 0.2MPa to obtain an ITO ceramic green body with a relative density of 62%;

[0068] Dry the ITO ceramic green body, and then put it into an integrated degreasing and sintering furnace. T...

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Abstract

The invention discloses a preparation method for an ITO ceramic target material with controllable grain size. The preparation method comprises the following steps that 90-97 parts by mass of In2O3 powder, 10-3 parts by mass of SnO2 powder, deionized water, a diluent, a binder and a sand mill for a high polymer material are subjected to ball-milling and mixing treatment to obtain ITO ceramic slurrywith the solid content of the range from 70% to 80% and the viscosity of the range from 120 mpa.s to 300 mpa.s, and the average particle size D50 of mixed powder is controlled to range from 100 nm to300 nm; the ITO ceramic slurry is subjected to pressure slip casting forming to obtain an ITO ceramic green body with the relative density of 58-62%; the ITO ceramic green body is put into a degreasing and sintering integrated furnace, and heated to the degreasing temperature of 700-800 DEG C, the ITO ceramic target material is degreased in a normal-pressure oxygen atmosphere, and the time is setto be 12-36 hours; and the temperature is raised to the first sintering temperature of 1600-1650 DEG C from the degreasing temperature, the temperature is kept for 0-60 minutes in the normal-pressureoxygen atmosphere, then the temperature is reduced to the second sintering temperature of 1500-1540 DEG C, the temperature is kept for 12-36 hours in the normal-pressure oxygen atmosphere, and finally, the ITO ceramic target material is obtained.

Description

technical field [0001] The application belongs to the technical field of ceramic target preparation, and in particular relates to a preparation method of an ITO ceramic target with controllable grain size. Background technique [0002] ITO ceramic target is the main raw material for preparing transparent conductive film (TCO) on conductive glass. The ITO ceramic target forms a layer of transparent conductive film on the glass substrate by sputtering. After the film is processed, it forms a common transparent electrode. Compared with other oxide films, ITO (Indium Tin Oxide) conductive film has the best performance, the main reason is that it has good conductivity (resistivity 10 -4 Ω·cm), light transmittance (transmittance>85%); high ultraviolet absorption rate (absorption rate>85%); one-way infrared penetration (reflectance>80%). [0003] The performance of ITO ceramic target directly determines the quality, production efficiency and yield of ITO conductive glass...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08
CPCC23C14/3414C23C14/35C23C14/086C04B35/457C04B2235/3293C04B35/6263C04B2235/5445C04B2235/604C04B2235/608C04B35/638C04B2235/3286C04B2235/5454C04B35/63424C04B35/63468C04B35/6261C04B2235/6562C04B2235/6565C04B2235/77C04B2235/786C04B2111/00224C04B35/636C04B35/634C04B2235/6567C04B35/63416C04B35/64C04B35/63444
Inventor 何季麟孙本双舒永春刘洋陈杰曾学云
Owner ZHENGZHOU UNIV