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A method for back coating of aluminum nitride single crystal growth seed crystal

An aluminum nitride and backside technology, which is applied in the field of artificial crystal growth, can solve the problems of sublimation of the backside of the sap crystal, complicated operation, low efficiency, etc., and achieves the effects of low cost, simple process and easy operation.

Active Publication Date: 2021-07-20
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It does not involve the prevention of porosity in the adhesive layer on the back during the process of bonding the AlN seed crystal, and the reverse temperature gradient caused by the porosity will lead to the sublimation of the back of the AlN seed crystal and the formation of defects
[0004] At the same time, the traditional coating method is high in cost, low in efficiency, and complicated in operation. The pores in the adhesive layer between the seed crystal and the adhesive layer and the seed crystal support will lead to sublimation defects on the back of the crystal.

Method used

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  • A method for back coating of aluminum nitride single crystal growth seed crystal
  • A method for back coating of aluminum nitride single crystal growth seed crystal
  • A method for back coating of aluminum nitride single crystal growth seed crystal

Examples

Experimental program
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Effect test

Embodiment 1

[0038] A method for coating the back of a seed crystal for aluminum nitride single crystal growth, comprising the following steps:

[0039] (1) Sodium aluminate is dissolved in water to form a dilute sodium aluminate aqueous solution;

[0040] (2) a circular aluminum nitride seed crystal with a diameter of 25.4mm is placed in the center of the homogenizer;

[0041] (3) drop the configured sodium aluminate aqueous solution on the center of the aluminum nitride seed crystal;

[0042] (4) Turn on the homogenizer, the speed of the homogenizer is 2000rpm so that the configured sodium aluminate aqueous solution is evenly covered on the back of the seed crystal;

[0043] (5) The seed crystal is placed in a drying furnace for drying for 2 hours at a drying temperature of 800° C. to obtain a coating film with a thickness of 1 μm and good uniformity of the coating film.

Embodiment 2

[0045] A method for coating the back of a seed crystal for aluminum nitride single crystal growth, comprising the following steps:

[0046] (1) Sodium aluminate is dissolved in water to be made into a saturated aqueous solution of sodium aluminate;

[0047] (2) a circular aluminum nitride seed crystal with a diameter of 25.4mm is placed in the center of the homogenizer;

[0048] (3) drop the configured saturated aqueous solution of sodium aluminate on the center of the aluminum nitride seed crystal;

[0049] (4) Turn on the homogenizer, the speed of the homogenizer is 2000rpm so that the prepared solution evenly covers the back of the seed crystal

[0050] (5) The seed crystal is placed in a drying oven for 2 hours and the drying temperature is 800° C. to obtain a coating thickness of 3 μm.

Embodiment 3-10

[0052] As described in Example 1, the difference is:

[0053] In step (1), potassium aluminate, magnesium aluminate, sodium metaaluminate, potassium metaaluminate, magnesium metaaluminate, sodium aluminosilicate, potassium aluminosilicate or magnesium aluminosilicate are respectively dissolved in water to configure dilute solution.

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Abstract

The invention relates to a method for coating the back surface of aluminum nitride single crystal growth seed crystal, comprising the following steps: dissolving a high-temperature-resistant and soluble substance into a solution, and then drip-coating it on the back surface of aluminum nitride seed crystal, and using uniform coating equipment The solution is evenly distributed on the back of the aluminum nitride seed crystal, and dried to complete the coating on the back of the aluminum nitride seed crystal. Through the above steps, a high-temperature-resistant and anti-sublimation film coating is finally obtained on the back of the aluminum nitride seed crystal. The process of the invention is simple, easy to operate, low in cost, and the back coating of the seed crystal is closely combined with the seed crystal, which solves the problem of pores in the glue layer generated between the seed crystal and the glue layer and the seed crystal support in the traditional seed crystal bonding process. The back sublimation defects improve the crystallization quality of AlN.

Description

technical field [0001] The invention relates to a method for coating the back of a seed crystal suitable for aluminum nitride single crystal growth, which is used in the growth of aluminum nitride crystals to prevent sublimation of the back of the seed crystal, and belongs to the field of artificial crystal growth. Background technique [0002] Aluminum nitride crystal (AlN) belongs to the third-generation wide-bandgap semiconductor material, which has the advantages of wide bandgap, high breakdown electric field, high thermal conductivity, high electron saturation rate and strong radiation resistance. Compared with other semiconductor materials, AlN crystal has more excellent properties: (1) the bandgap width is 6.2eV, which is an important substrate material for deep ultraviolet devices; (2) it has high thermal conductivity, high melting point, high resistivity, and Strong field penetration and small dielectric coefficient make it an excellent electronic material for high-...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B05D1/26B05D3/02C09D1/00C09D163/00C30B29/40
CPCB05D1/26B05D3/0254C09D1/00C09D163/00C30B29/403
Inventor 张雷俞瑞仙刘光霞陈成敏程雪赵刚
Owner SHANDONG UNIV