A kind of preparation method of silicon carbide-based twisted multilayer graphene material
A multi-layer graphene and silicon carbide-based technology, applied in the direction of graphene, chemical instruments and methods, carbon compounds, etc., can solve the problems of poor repeatability and unstable graphene lattice structure, and achieve uniform and flat surface, electrical Excellent characteristics and the effect of improving electrical characteristics
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Embodiment 1
[0032] A preparation method of a silicon carbide-based twisted bilayer graphene material:
[0033] S1, the SiC substrate is heated and cleaned with concentrated sulfuric acid, aqua regia and hydrofluoric acid solutions, rinsed with deionized water, dried with a nitrogen gun, placed in a dust-proof device, and dried in an oven;
[0034] S2, put the pretreated SiC substrate into the CVD equipment, and evacuate to ≤10 -4 mbar, turn on the microwave power supply, heat up the vacuum environment to 1100°C, and keep warm for 20 minutes;
[0035] S3, feed hydrogen, the hydrogen flow rate is 6L / min, the temperature is raised to 1600°C at a constant rate of 20°C / min, the growth pressure is controlled at 950mbar, and propane is fed, the propane flow rate is 0.42L / min, and the carbon-hydrogen ratio is 7 %, grow for 30min;
[0036] S4, turn off the microwave power supply, stop feeding hydrogen and propane, and drop to room temperature in a hydrogen environment for 5 hours to obtain the s...
Embodiment 2
[0041] A method for preparing a silicon carbide-based twisted three-layer graphene material:
[0042] S1, the SiC substrate is heated and cleaned with concentrated sulfuric acid, aqua regia and hydrofluoric acid solutions, rinsed with deionized water, dried with a nitrogen gun, placed in a dust-proof device, and dried in an oven;
[0043] S2, put the pretreated SiC substrate into the CVD equipment, and evacuate to ≤10 -4 mbar, turn on the microwave power supply, heat up the vacuum environment to 1050°C, and keep it warm for 30 minutes;
[0044] S3, feed hydrogen, the hydrogen flow rate is 3L / min, the temperature is raised to 1500°C at a constant rate of 15°C / min, the growth pressure is controlled at 990mbar, and methane is fed, the methane flow rate is 0.3L / min, and the carbon-hydrogen ratio is 10 %, grow for 45min;
[0045] S4, turn off the microwave power supply, stop feeding hydrogen and propane, drop to room temperature in a hydrogen environment, and the cooling time is 4h...
Embodiment 3
[0047] A preparation method of a silicon carbide-based twisted bilayer graphene material:
[0048] S1, the SiC substrate is heated and cleaned with concentrated sulfuric acid, aqua regia and hydrofluoric acid solutions, rinsed with deionized water, dried with a nitrogen gun, placed in a dust-proof device, and dried in an oven;
[0049] S2, put the pretreated SiC substrate into the CVD equipment, and evacuate to ≤10 -4 mbar, turn on the microwave power supply, heat up the vacuum environment to 1150°C, and keep it warm for 5 minutes;
[0050] S3, feed hydrogen, the flow rate of hydrogen is 8L / min, the temperature is raised to 1700°C at a constant rate of 25°C / min, the growth pressure is controlled at 910mbar, acetylene is fed, the flow rate of acetylene is 1L / min, and the carbon-hydrogen ratio is 12.5% , grow for 10min;
[0051] S4, turn off the microwave power supply, stop feeding hydrogen and propane, drop to room temperature in a hydrogen environment, and cool down for 6 ho...
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