Copper/ceramic bonded body, insulating circuit board, copper/ceramic bonded body production method, and insulating circuit board production method

Abstract

This copper/ceramic bonded body is constituted by a copper member (12), comprising copper or a copper alloy, and a ceramic member (11), comprising aluminum oxide, which are bonded to each other. A magnesium oxide layer (31) is formed between the copper member (12) and the ceramic member (11) on the ceramic member (11) side. A Mg solid solution layer (32) in which Mg is solid-solved in a Cu matrixphase is formed between the magnesium oxide layer (31) and the copper member (12). One or more active metals selected from Ti, Zr, Nb, and Hf are present in the Mg solid solution layer (32).

Description

technical field [0001] The present invention relates to a copper-ceramic bonded body formed by bonding a copper part made of copper or copper alloy and a ceramic part made of aluminum oxide, an insulating circuit substrate and a method for manufacturing the copper-ceramic bonded body, and an insulating circuit substrate Manufacturing method. [0002] This application claims priority based on Patent Application No. 2018-010965 filed in Japan on January 25, 2018 and Patent Application No. 2018-227472 filed in Japan on December 4, 2018, and the contents thereof are incorporated herein. Background technique [0003] In a power module, an LED module, and a thermoelectric module, a power semiconductor element, an LED element, and a thermoelectric element are bonded to an insulating circuit substrate in which a circuit layer made of a conductive material is formed on one side of an insulating layer. [0004] Power semiconductor elements for high-power control, such as wind power g...

AI Technical Summary

Problems solved by technology

[0011] However, as disclosed in Patent Document 1, when bonding a ceramic substrate and a copper plate by the DBC method, it is necessary to set the bonding temperature at 1065° C. or higher (above the eutectic point temperature of copper and copper oxide), so the ceramic substrate may deterioration

[0012] In addition, as disclosed in Patent Document 2, when a ceramic substrate and a copper plate are joined by an active metal brazing method, the brazing filler metal contains Ag, and Ag exists at the joint interface, so migration is likely to occur, so it cannot be used in high withstand voltage applications.

In addition, since the bonding temperature is relatively high at 900°C, there is still a problem of deterioration of the ceramic substrate.

[0013] In addition, as disclosed in Patent Document 3, the slurry contains powder composed of Cu-Mg-Ti alloy. When bonding under a nitrogen atmosphere using a solder for bonding composed of the slurry, there is residual gas at the bonding interface, which is likely to cause Partial Discharge Problem

Also, since the alloy powder is used, the melting state may become uneven depending on the composition deviation of the alloy powder, and a region with insufficient interfacial reaction may be locally formed.

In addition, organic matter contained in the slurry may remain at the bonding interface, resulting in insufficient bonding

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