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Polishing composition and polishing method

A composition and compound technology, used in polishing compositions containing abrasives, grinding devices, grinding machine tools, etc., can solve the problems of inability to control the concentration of oxidants, difficulty in grinding control, corrosion of metal wiring grinding devices, etc.

Inactive Publication Date: 2020-08-25
ASAHI GLASS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, oxidizing agents cause corrosion of metal wiring and corrosion of grinding equipment.
Furthermore, the oxidizing agent is easily decomposed by the disproportionation reaction, and the concentration of the oxidizing agent in the polishing composition cannot be controlled to be constant, so it becomes the cause of fluctuations in the processing speed and reduces the reproducibility of the polishing process.
In addition, the oxidizing agent has the following problems: the polishing stop layer (SiN, etc.) is modified by oxidation, the function as the polishing stop layer is weakened, and the control of polishing is difficult.
[0007] In addition, non-patent document 1 discloses the use of sodium percarbonate as an oxidizing agent as a polishing composition for CMP for metal wiring formation in semiconductor devices using ruthenium and molybdenum as buried wiring, but the polishing speed is slow. Waiting for the question

Method used

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  • Polishing composition and polishing method
  • Polishing composition and polishing method

Examples

Experimental program
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Effect test

preparation example Construction

[0132]

[0133] In order to prepare this polishing composition, compound (1) and cerium oxide particles are added as essential components to a liquid medium containing water such as pure water and ion-exchanged water, and further, if necessary, a rust inhibitor and the like are added as optional components and carried out. Just mix it. At this time, a pH adjuster may be added as needed, and it may prepare so that the pH of the obtained polishing composition may fall within the said preferable range. In order to contain cerium oxide and other abrasive grains in the present polishing composition, a method of adding and mixing the above-mentioned components to a dispersion liquid in which the abrasive grains are dispersed is used. After mixing, stirring is performed for a predetermined time using a stirrer or the like to obtain a uniform polishing composition. In addition, a better dispersion state can also be obtained by using an ultrasonic disperser after mixing.

[0134] T...

Embodiment

[0150] Hereinafter, although an Example and a comparative example demonstrate this invention more concretely, this invention is not limited to these Examples.

[0151] Examples 1-11 are examples, and Examples 12-13 are comparative examples. In the following examples, "%" means mass % unless otherwise specified. In addition, the characteristic value was measured and evaluated by the following method.

[0152] [pH]

[0153] About pH, it measured using the pH meter HM-30R by DKK-TOA CORPORATION.

[0154] [Average secondary particle size]

[0155] The average secondary particle diameter was measured using a laser scattering / diffraction particle size distribution analyzer (manufactured by HORIBA, Ltd., device name: LA-920).

[0156] [Grinding characteristics]

[0157] The polishing characteristics were evaluated by performing the following polishing using a fully automatic CMP polishing apparatus (manufactured by Applied Materials, apparatus name: Mirra). A foamed hard polyur...

example 1

[0163] Pure water, compound (1Si-1)·K +, polyacrylic acid, and a pH adjuster are mixed to prepare a mixed solution adjusted so as to become a predetermined pH, and the mixed solution is added to disperse cerium oxide particles with an average primary particle diameter of 60 nm (average secondary particle diameter of 90 nm). The mixture was mixed with a cerium oxide dispersion liquid made of pure water to obtain a polishing composition (1) having a pH of 9.0. Table 3 shows the content of each component in the polishing composition (1).

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Abstract

Provided are a polishing composition and a polishing method. Provided is a composition for use in CMP for forming a wiring of a semiconductor integrated circuit device, which uses, in particular, a metal that has low electrical resistance and can be thinned, such as cobalt, ruthenium and molybdenum, and which uses the metal as an embedded wiring. Provided are: a polishing composition which is capable of polishing a metal layer at a high polishing speed without using an oxidizing agent; and a polishing method which uses the polishing composition. The polishing composition is characterized by containing a predetermined compound (1), cerium oxide, and water, the predetermined compound (1) having an S = C structure (wherein at least one of the atoms bonded to C is S or N) in the molecule.

Description

technical field [0001] The present invention relates to a polishing composition and a polishing method, and particularly to a polishing composition used for chemical mechanical polishing in the manufacture of semiconductor integrated circuits, and a polishing method using the polishing composition. Background technique [0002] In recent years, along with higher integration and higher functionality of semiconductor integrated circuits, the development of microfabrication technologies for miniaturization and higher density of semiconductor elements has been progressing. Conventionally, in the manufacture of semiconductor integrated circuit devices (hereinafter also referred to as semiconductor devices), in order to prevent problems such as unevenness (height difference) on the surface of the layer exceeding the depth of focus of photolithography and insufficient resolution, etc., using Chemical Mechanical Polishing (Chemical Mechanical Polishing: hereinafter referred to as CM...

Claims

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Application Information

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IPC IPC(8): C09K3/14H01L21/48
CPCC09K3/1463H01L21/4846C09G1/02H01L21/3212B24B37/044C09K3/1409C09K3/1454H01L21/7684
Inventor 赤時正敏高木靖之加藤知夫
Owner ASAHI GLASS CO LTD
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