A kind of preparation method of copper electrode composite layer of thermistor
A thermistor and copper electrode technology, applied in resistance manufacturing, resistors, coatings, etc., can solve the problems of easy diffusion, failure, and reduced working performance of copper electrodes, and achieve inhibition of copper diffusion, excellent oxidation resistance, The effect of good thermal stability
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Embodiment 1
[0019] A preparation method of a thermistor copper electrode composite layer, comprising the following steps:
[0020] (1) Wash the ceramic substrate twice with deionized water after ultrasonic cleaning, and place it in a dryer for drying treatment. The drying treatment time is 10 minutes, and the drying treatment temperature is 160 ° C; after drying, it is ready to use;
[0021] (2) Ti powder is ball milled to obtain Ti nano-powder; the ceramic substrate is put into a direct current arc plasma evaporation equipment, and the vacuum is 10 -3 Mpa, filled with inert gas, Ti nano-powder plasma sputtering treatment in inert gas reflux, the treatment temperature is 1600°C, the sputtering speed is 1800m / s, after obtaining the first barrier layer with a thickness of 1300nm, the temperature is lowered to 20°C, and the temperature is lowered. The speed is 200°C / s; after standing for 1 hour, the Ti powder is replaced with Ti-Ni nano-powder, and the Ti-Ni nano-powder plasma sputtering tre...
Embodiment 2
[0028] A preparation method of a thermistor copper electrode composite layer, comprising the following steps:
[0029] (1) Wash the ceramic substrate with deionized water three times after ultrasonic cleaning, and place it in a dryer for drying treatment. The drying treatment time is 15 minutes, and the drying treatment temperature is 200 ° C; after drying, it is ready to use;
[0030] (2) Ti powder is ball milled to obtain Ti nano-powder; the ceramic substrate is put into a direct current arc plasma evaporation equipment, and the vacuum is 10 -4 Mpa, filled with inert gas, Ti nano powder plasma sputtering treatment in the inert gas reflux, the treatment temperature is 2000°C, the sputtering speed is 2000m / s, after obtaining the first barrier layer with a thickness of 1800nm, the temperature is lowered to 20°C, and the temperature is lowered. The speed is 300°C / s; after standing for 2 hours, the Ti powder is replaced with Ti-Ni nano-powder, and the Ti-Ni nano-powder plasma spu...
Embodiment 3
[0037] A preparation method of a thermistor copper electrode composite layer, comprising the following steps:
[0038] (1) Wash the ceramic substrate with deionized water three times after ultrasonic cleaning, and place it in a dryer for drying treatment. The drying treatment time is 14 minutes, and the drying treatment temperature is 180 ° C; after drying, it is ready to use;
[0039] (2) Ti powder is ball milled to obtain Ti nano-powder; the ceramic substrate is put into a direct current arc plasma evaporation equipment, and the vacuum is 10 -4 Mpa, filled with inert gas, Ti nano powder plasma sputtering treatment in inert gas reflux, the treatment temperature is 1800°C, the sputtering speed is 1900m / s, after obtaining the first barrier layer with a thickness of 1700nm, the temperature is lowered to 20°C, and the temperature is lowered. The speed is 250°C / s; after standing for 1.5 hours, the Ti powder is replaced with Ti-Ni nano-powder, and the Ti-Ni nano-powder plasma sputt...
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