Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A processing technology for preparing solar cells by cutting silicon wafers with diamond wire

A diamond wire cutting and processing technology, applied in the field of solar cells, can solve problems such as high production costs, and achieve the effects of reducing cutting costs, increasing junction depth, and increasing short-circuit current.

Active Publication Date: 2022-02-11
ECONESS ENERGY
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Although crystalline silicon solar cells have developed greatly in recent years, and the introduction of many new technologies has greatly improved the efficiency of crystalline silicon solar cells, the relatively high production cost is still the limit for the current development of the crystalline silicon cell industry. The biggest restrictive factor, so the research and development of efficient and cheap solar cells is the subject of the photovoltaic industry in all countries in the world.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] S1: Material selection:

[0044] The polycrystalline silicon wafer obtained by diamond wire cutting was selected as the substrate, and the substrate was cleaned and polished in nitric acid and hydrofluoric acid in sequence to remove the damaged layer on the substrate surface; the diameter of the diamond wire was selected as 70 μm, and the thickness of the damaged layer removed was 3 μm .

[0045] S2: Texturing:

[0046] Take the substrate treated in step S1, coat the front surface of the substrate with photoresist, the thickness of the photoresist is 2um, bake in an oven at 90°C for 25min, expose to ultraviolet light, develop and corrode, and then place it in an oven at 120°C Bake for 15 minutes to form a photolithographic mask layer on the front surface of the substrate;

[0047] Take hydrofluoric acid and nitric acid, mix and stir for 5 minutes to obtain the texturing solution, pour the texturing solution into the chamber where steam is generated, and adjust the tem...

Embodiment 2

[0059] S1: Material selection:

[0060] The polycrystalline silicon wafer obtained by diamond wire cutting was selected as the substrate, and the substrate was cleaned and polished in nitric acid and hydrofluoric acid in sequence to remove the damaged layer on the substrate surface; the diameter of the diamond wire was selected as 70 μm, and the thickness of the damaged layer removed was 4 μm .

[0061] S2: Texturing:

[0062] Take the substrate treated in step S1, coat the front surface of the substrate with photoresist, the thickness of the photoresist is 3um, bake in a 90°C oven for 35min, expose to ultraviolet light, develop and corrode, and then place in a 120°C oven Bake for 20 minutes to form a photolithographic mask layer on the front surface of the substrate;

[0063] Take hydrofluoric acid and nitric acid, mix and stir for 8 minutes to obtain the texturing solution, pour the texturing solution into a steam-generating chamber, and adjust the temperature to 85°C; tak...

Embodiment 3

[0075] S1: Material selection:

[0076] The polycrystalline silicon wafer obtained by diamond wire cutting was selected as the substrate, and the substrate was cleaned and polished in nitric acid and hydrofluoric acid in sequence to remove the damaged layer on the substrate surface; the diameter of the diamond wire was selected as 70 μm, and the thickness of the damaged layer removed was 4 μm .

[0077] S2: Texturing:

[0078] Take the substrate treated in step S1, coat the front surface of the substrate with photoresist, the thickness of the photoresist is 3um, bake in an oven at 90°C for 30min, expose to ultraviolet light, develop and corrode, and then place it in an oven at 120°C Bake for 18 minutes to form a photolithography mask layer on the front surface of the substrate;

[0079] Take hydrofluoric acid and nitric acid, mix and stir for 7 minutes to obtain the texturing solution, pour the texturing solution into the chamber where steam is generated, and adjust the temp...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a processing technology for preparing battery slices by cutting silicon wafers with diamond wires. The polycrystalline silicon slices obtained by diamond wire cutting are selected as substrates, and the substrates are sequentially put into nitric acid and hydrofluoric acid for cleaning and polishing, and the substrates are removed. Surface damage layer; then prepare a photolithographic mask layer on the front surface of the substrate, and then make texturing by steam texturing, and then pass POCL on the front surface of the substrate 3 The P-N junction is prepared by the thermal diffusion method of the liquid diffusion source, and finally wet-etched on the front surface of the substrate, coated with an anti-reflection film, printed and sintered to obtain a finished product; the invention discloses a method for preparing a cell by diamond wire cutting silicon The processing technology is reasonable, the process design is reasonable, the operation is simple and controllable, and the silicon wafer cut by diamond wire is used as the substrate for processing, and the solar cell with excellent electrical performance is prepared, thereby improving the open circuit voltage, short circuit current and fill factor of the solar cell, and improving Conversion efficiency, to achieve the purpose of cost reduction and efficiency improvement, has high practicability.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a processing technology for preparing solar cells by cutting silicon chips with diamond wires. Background technique [0002] At present, the research and development of new energy mainly focus on renewable energy such as solar energy, wind energy, and geothermal energy. Due to the abundant and widely distributed solar energy resources, it is the new energy with the most development potential. Today, with the development of modern production, fossil fuels such as oil, coal, and natural gas cannot meet the energy demand for development, and the extensive use of fossil energy has led to global warming and frequent natural disasters. Due to its advantages of convenience, safety and reliability, and sufficient resources, solar energy has become a new type of industry supported and developed by countries all over the world. [0003] Although crystalline silicon solar cells have de...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0216H01L31/0224H01L31/0236
CPCH01L31/1804H01L31/022425H01L31/02363H01L31/02168Y02E10/547Y02P70/50
Inventor 赵卫东刘旦生鞠飞王斯明刘才广江兴峰
Owner ECONESS ENERGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products