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A solar-blind ultraviolet detector of gallium trioxide and its preparation method

A technology of ultraviolet detector and gallium source, which is applied in semiconductor devices, final product manufacturing, gaseous chemical plating, etc., can solve the problems of limited application, and achieve the effect of steep absorption cut-off edge and high crystal quality

Active Publication Date: 2022-05-27
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

But Ga 2 o 3 : The quality of Zn thin film itself limits its application in solar-blind ultraviolet detectors

Method used

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  • A solar-blind ultraviolet detector of gallium trioxide and its preparation method
  • A solar-blind ultraviolet detector of gallium trioxide and its preparation method
  • A solar-blind ultraviolet detector of gallium trioxide and its preparation method

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preparation example Construction

[0031] The Ga 2 O 3 : The preparation method of Zn thin film, comprising the following steps:

[0032] The cleaned substrate is placed in an MOCVD growth chamber, a protective atmosphere is introduced into the MOCVD growth chamber, and then the substrate is heated;

[0033] Using organic zinc compounds as zinc sources, organic gallium compounds as gallium sources, and high-purity oxygen as oxygen sources, a film is grown on the surface of the heated substrate;

[0034] Heat treatment of the grown film to obtain Ga 2 O 3 : Zn thin film.

[0035] Ga in this application 2 O 3 In the solar-blind ultraviolet detector, the substrate and the metal interdigital electrode are both materials well known to those skilled in the art. For example, the substrate is selected from a sapphire substrate, magnesium oxide or magnesium aluminate. The metal interdigitated electrode is specifically a gold interdigitated electrode, and the surface of the metal interdigitated electrode is compou...

Embodiment 1

[0052] Put the cleaned sapphire substrate into the MOCVD growth chamber, turn on the molecular pump, and pass in nitrogen gas, so that the vacuum degree of the chamber during the growth process is 5x10 3 Pa, raising the substrate temperature to 500°C at 0.3°C / s, and then raising the substrate temperature to 600°C at 0.2°C / s;

[0053] Using diethylzinc as the zinc source and trimethylgallium as the gallium source, the composition ratio of Zn and Ga can be adjusted by adjusting the carrier gas ratio of the zinc source and the gallium source. The carrier gas flow rate of the zinc source is 3 sccm, The carrier gas flow rate of the gallium source is 50 sccm, and the flow rate of oxygen gas is 300 sccm. After growth for 2 h, the organic source and oxygen are turned off, and the substrate temperature is lowered to room temperature at 0.3 °C / s to obtain Ga 2 O 3 : Zn thin film;

[0054] The obtained Ga 2 O 3 : The Zn thin film material was placed in a tubular annealing furnace, an...

Embodiment 2

[0062] Put the cleaned sapphire substrate into the MOCVD growth chamber, turn on the molecular pump, and pass in nitrogen gas, so that the vacuum degree of the chamber during the growth process is 5x10 3 Pa, the substrate temperature is raised to 500°C at 0.3°C / s, and the substrate temperature is raised to 800°C at 0.2°C / s;

[0063] Using diethylzinc as the zinc source and trimethylgallium as the gallium source, the composition ratio of Zn and Ga can be adjusted by adjusting the carrier gas ratio of the zinc source and the gallium source. The carrier gas flow rate of the zinc source is 3 sccm, The carrier gas flow rate of the gallium source is 50 sccm, and the flow rate of oxygen gas is 300 sccm. After growth for 2 h, the organic source and oxygen are turned off, and the substrate temperature is lowered to room temperature at 0.3 °C / s to obtain Ga 2 O 3 : Zn thin film;

[0064] The obtained Ga 2 O 3 : The Zn thin film material was placed in a tubular annealing furnace, and...

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Abstract

The present invention provides a Ga 2 o 3 UV detectors, including substrates, Ga 2 o 3 : Zn thin films and metal interdigitated electrodes. The application also provides a Ga 2 o 3 Preparation method of ultraviolet detector. Ga provided by the present invention 2 o 3 Ga of UV detector 2 o 3 The thin film layer has the characteristics of high crystal quality and steep absorption cut-off edge, so that the Ga 2 o 3 Thin-film UV detectors have very high response speed and low dark current at the same time.

Description

technical field [0001] The invention relates to the technical field of semiconductor material growth, in particular to a Ga 2 O 3 Solar blind ultraviolet detector and preparation method thereof. Background technique [0002] Ultraviolet detection technology has broad application prospects in military and civilian fields such as missile tail flame detection, flame sensing, air and water purification, and air-to-air communication. Ultraviolet radiation with wavelengths less than 280nm is almost unable to propagate to the earth's surface due to the blocking of the ozone layer above the earth, which is called solar-blind ultraviolet. The solar-blind ultraviolet detector working in the solar-blind band is not disturbed by solar radiation, has higher sensitivity, and can be used in missile early warning and other aspects. In recent years, wide-bandgap semiconductors have broad application prospects in solar-blind ultraviolet (200nm-280nm) photodetection. Wide-bandgap semicondu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/032H01L31/108H01L31/18C23C16/40
CPCH01L31/0321H01L31/1085H01L31/18C23C16/40Y02P70/50
Inventor 刘可为孙璇申德振陈星张振中李炳辉
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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