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Zinc oxide-based light-emitting diode and manufacturing method thereof

A light-emitting diode, zinc oxide-based technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of limiting the ultraviolet luminescence performance of zinc oxide, the influence of device luminous intensity, etc., to achieve mass production, low cost, and high luminous intensity enhanced effect

Pending Publication Date: 2020-10-09
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the intrinsic defects in ZnO such as oxygen vacancies and zinc interstitials limit the ultraviolet luminescence performance of zinc oxide (ZnO), and the luminous intensity of the device has been affected.

Method used

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  • Zinc oxide-based light-emitting diode and manufacturing method thereof
  • Zinc oxide-based light-emitting diode and manufacturing method thereof
  • Zinc oxide-based light-emitting diode and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0033] Such as figure 1 As shown, the present embodiment provides a method for manufacturing a ZnO-based light-emitting diode, including:

[0034] S1: From top to bottom, select 2-inch P-type silicon as the substrate, use acetone and isopropanol to sonicate for 3 minutes, and blow dry with an air gun. An AAO film with a pore size of 20 nm and a pitch of 50 nm was transferred onto the substrate.

[0035] S2: A layer of Ag is grown on the AAO film by magnetron sputtering, the sputtering power is 50W, and the thickness is 20nm.

[0036] S3: The AAO film was removed using Kapton tape, leaving the Ag nanoparticles.

[0037] S4: Growth of Al on nanoparticles by atomic layer deposition (ALD) at 100 °C 2 o 3 The barrier layer was grown to a thickness of 20nm. A ZnO layer was grown on the Al2O3 barrier layer in the same manner to a thickness of 50nm. At this time, the basic structure of the device is completed, and the structure diagram is as follows: figure 2 shown.

[0038] ...

Embodiment 2

[0040] This embodiment provides a method for manufacturing a ZnO-based light-emitting diode, and the specific steps are as in Embodiment 1, including:

[0041] S1: From top to bottom, select 2-inch P-type silicon as the substrate, use acetone and isopropanol to sonicate for 3 minutes, and blow dry with an air gun.

[0042] S2: transfer the AAO film with a pore size of 50 nm and a pitch of 120 nm onto a substrate. A layer of Au was grown on the AAO film by magnetron sputtering, the sputtering power was 100W, and the thickness was 100nm.

[0043] S3: The AAO film was removed using Kapton tape, leaving the Au nanoparticles.

[0044] S4: Growth of Al on nanoparticles by atomic layer deposition (ALD) at 150 °C 2 o 3 The barrier layer was grown to a thickness of 50nm. In the same way at Al 2 o 3 A ZnO layer was grown on the barrier layer with a thickness of 150 nm. At this point the basic structure of the device is complete.

[0045] Compared with ZnO without metal particles...

Embodiment 3

[0047] This embodiment provides a method for manufacturing a ZnO-based light-emitting diode, and the specific steps are as in Embodiment 1, including:

[0048] S1: From top to bottom, select 2-inch P-type silicon as the substrate, use acetone and isopropanol to sonicate for 3 minutes, and blow dry with an air gun.

[0049]S2: Transfer the AAO film with a pore diameter of 100 nm and a pitch of 180 nm to a substrate. A layer of Pt was grown on the AAO film with a thickness of 150 nm using a hydrothermal method.

[0050] S3: The AAO film was removed using Kapton tape, leaving the Pt nanoparticles.

[0051] S4: Growth of Al on nanoparticles by magnetron sputtering at room temperature 2 o 3 The barrier layer was grown with a sputtering power of 200W and a thickness of 100nm. In the same way at Al 2 o 3 A ZnO layer is grown on the barrier layer with a thickness of 300 nm. At this time, the basic structure of the device is completed, and the structure diagram is as follows: ...

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Abstract

The invention discloses a novel zinc oxide-based light emitting diode and a manufacturing method thereof, the novel zinc oxide-based light emitting diode comprises a P-type silicon substrate, a cylindrical metal nanoparticle array layer, an electron blocking layer and a zinc oxide (ZnO) layer, and the luminous intensity of ZnO is enhanced through the local surface plasma effect of metal nanoparticles. The invention further discloses a manufacturing method of the light emitting diode, the anodized aluminum (AAO) film is used for preparing the nano particles, and the size and the distance of thenano particles can be accurately controlled. The method is characterized in that the AAO film is used for preparing the cylindrical metal nanoparticle array, particle distribution with metal local surface plasma energy most matched with ZnO excimer energy is obtained by accurately controlling the shape, the size and the distance of the nanoparticle array, ZnO luminescence is enhanced to the maximum extent, and the luminescence performance of the diode is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a novel zinc oxide (ZnO)-based light-emitting diode and a manufacturing method thereof. [0002] technical background [0003] In recent years, due to the advantages of small size, light weight, resistance to magnetic field interference, good linearity and high frequency operation, ultraviolet optoelectronic devices based on wide bandgap semiconductors have become the main direction of future development. II-VI group oxide ZnO is widely used in the development of ultraviolet optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors because of its direct wide bandgap (3.37eV) and large exciton binding energy (60meV). However, the intrinsic defects in ZnO, such as oxygen vacancies and zinc interstitials, limit the ultraviolet luminescence performance of zinc oxide (ZnO), and the luminous intensity of the device has been affected. Therefore, it is...

Claims

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Application Information

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IPC IPC(8): H01L33/14H01L33/28H01L33/02H01L33/00
CPCH01L33/145H01L33/28H01L33/02H01L33/0091
Inventor 王霄敖金平冶琼翟小崎王婷婷彭韬玮
Owner XIDIAN UNIV
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