Preparation method of porous bismuth vanadate film photo-anode

A technology of porous bismuth vanadate and photoanode, applied in electrodes, electrode shape/type, electrolysis process, etc., can solve the problems of low carrier separation efficiency and low photohydrogen conversion efficiency of pure bismuth vanadate photoanode

Active Publication Date: 2020-10-23
SHAANXI NORMAL UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the bismuth vanadate material has the above advantages as a photoanode, the light-to-hydrogen conversion efficiency of the unmodified pure bismuth vanadate photoanode is still lower than its theoretical value, which is mainly due to the lower carriers in the bismuth vanadate material. due to separation efficiency

Method used

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  • Preparation method of porous bismuth vanadate film photo-anode
  • Preparation method of porous bismuth vanadate film photo-anode
  • Preparation method of porous bismuth vanadate film photo-anode

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Embodiment 1

[0038] 1. Preparation of bismuth oxyiodide seed layer

[0039] Bi(NO 3 ) 3 ·5H 2 O and KI were dissolved in a mixed solvent of ethylene glycol and acetic acid with a volume ratio of 2:1 at a molar ratio of 1:1 to prepare a bismuth oxyiodide precursor solution with a bismuth ion concentration of 0.1 mol / L. The 20mm×20mm FTO glass substrate was ultrasonically cleaned in water, ethanol and acetone for 20 minutes respectively, and dried with nitrogen gas, and then the bismuth oxyiodide precursor solution with a bismuth ion concentration of 0.1mol / L was dropped on the FTO glass substrate. Spin coating on the bottom, during the spin coating process, rotate at 2500r / min for 5s and 3000r / min for 30s at a high speed, so that the precursor solution is evenly coated on the FTO glass substrate. Then the FTO glass substrate was quickly dried on a hot stage at 200°C and immersed in water at 55°C for 10 minutes. Finally, it was taken out and dried with nitrogen and placed in an oven at 70...

Embodiment 2

[0045] In step 2 of this embodiment, the bismuth oxyiodide precursor solution with a bismuth ion concentration of 0.3 mol / L is used to replace the bismuth oxyiodide precursor solution with a bismuth ion concentration of 0.2 mol / L in Step 2 of Example 1, and the other steps are the same as Same as in Example 1, a porous bismuth vanadate thin film photoanode was obtained.

Embodiment 3

[0047] In step 2 of this embodiment, the bismuth oxyiodide precursor solution with a bismuth ion concentration of 0.35 mol / L is used to replace the bismuth oxyiodide precursor solution with a bismuth ion concentration of 0.2 mol / L in Step 2 of Example 1, and the other steps are the same as Same as in Example 1, a porous bismuth vanadate thin film photoanode was obtained.

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Abstract

The invention discloses a preparation method of a porous bismuth vanadate film photo-anode, which comprises the following steps: spin-coating a conductive glass substrate with a low-concentration bismuth oxyiodide precursor solution, and treating at low temperature to obtain a bismuth oxyiodide seed crystal layer; spin-coating the seed crystal layer with a high-concentration bismuth oxyiodide precursor solution, and carrying out low-temperature treatment to obtain a thickness-controllable bismuth oxyiodide nanosheet film; and dropwise coating the bismuth oxyiodide nanosheet with a dimethyl sulfoxide solution of vanadyl acetylacetonate, and carrying out calcination and sodium hydroxide aqueous solution treatment to obtain the porous bismuth vanadate film photo-anode. According to the preparation method, the bismuth oxyiodide nanosheet film is prepared mainly through a low-temperature wet chemical method, then the porous bismuth vanadate film is obtained through calcination, the whole preparation process is novel in method and mild in condition, and the prepared bismuth oxyiodide nanosheet film is uniform and compact.

Description

technical field [0001] The invention belongs to the technical field of photoelectric catalysis, and in particular relates to a method for preparing a porous bismuth vanadate thin film photoanode. Background technique [0002] Under the social background of increasing shortage of traditional energy sources, the search for new renewable energy sources has become one of the most concerned issues in countries all over the world. Among many renewable energy sources, solar energy has great potential application value because of its abundant reserves and convenient access. At present, the research on the storage and application of solar energy mainly focuses on the conversion of solar energy into electrical energy and chemical energy. Among them, the conversion of solar energy into hydrogen energy through photoelectrochemical water splitting devices is an effective way to store solar energy, and the realization of this technology The key is to find a suitable photoelectrode materi...

Claims

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Application Information

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IPC IPC(8): C25B11/03C25B11/04C25B1/04
CPCC25B1/04Y02E60/36
Inventor贾丽超李灿冯帆
OwnerSHAANXI NORMAL UNIV