A highly integrated all-solid-state laser wavelength control method and laser with electron-phonon coupling
A laser wavelength and highly integrated technology, applied in the laser field, can solve problems such as the inability to achieve laser wavelength, precise regulation and stable output, etc., and achieve the effects of easy mass production, guaranteed consistency, and easy assembly and adjustment
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Embodiment 1
[0051] A highly integrated all-solid-state laser control device with electron-phonon coupling to achieve 850nm output.
[0052] structured as figure 1 As shown, the pumping source 1, the laser focusing system 2, and the electron-phonon coupling laser crystal 4 are arranged in sequence along the optical path direction; wherein, the pumping source 1 is a laser diode laser, and the pumping wavelength is 658nm, and the electron - Phonon coupled laser crystal 4 is alexandrite crystal, Cr 3+ The ion doping concentration is 0.2at.% (at.% is the atomic percentage), the cutting direction, that is, the light passing direction is the optical axis Z direction, the electron-phonon coupled laser crystal 4 has a light passing length of 10mm, and the distance between the center of the cross section and the heat dissipation surface The distance is 1.5mm, and the crystal temperature is controlled at 50°C.
[0053]The input cavity mirror dielectric film 3 is coated on the incident light end of...
Embodiment 2
[0056] As described in Example 1, the difference is that the emission wavelength of the pump source 1 is 976nm, and the electron-phonon coupling laser crystal is Yb 3+ Doped calcium yttrium borate crystal, Yb 3+ The ion doping concentration is 20 at.%. The crystal length is 6mm, and the temperature is controlled at 5°C. The input cavity mirror dielectric film 3 is coated with a dielectric film with high transmittance to 900-1000nm, high reflection to 1180-1200nm, and a transmittance of 70% to 1140-1160nm; the output cavity mirror dielectric film 5 is highly reflective to 900-1000nm, For a dielectric film with a transmittance of 10% at 1180-1200nm and a transmittance of 70% at 1220-1240nm, calculated by Huang Kun factor gain, the maximum gain direction of electron-phonon coupling of the crystal emitting 1193nm laser wavelength is the same as Z Axis (103°±1°) and X-axis (27°±1°), the focus system has a focus ratio of 2:1. Increase the pump power to realize the electron-phonon...
Embodiment 3
[0058] As described in Embodiment 1, the difference is that the pump source 1 is an all-solid-state laser with an emission wavelength of 532nm, and the electron-phonon coupling crystal is titanium sapphire, Ti 3+ The ion doping concentration is 0.1 at.%, and the crystal temperature is controlled at 10°C. The dielectric film 3 of the input cavity mirror is coated with a dielectric film with high transmission to 500-550nm, high reflection to 880-920nm and high transmission to 750-850nm; the dielectric film 5 of the output cavity mirror is coated with a high reflection to 500-550nm, Dielectric film with 5% transmittance at 880-920nm and high transmittance at 940-980nm. The crystal is a trigonal crystal system, the imaginary part of the refractive index coincides with the real part, and the crystal is cut along the Z axis of the optical axis, that is, the direction of light transmission is along the Z axis. What is achieved is the electron-phonon coupled laser output with a wavel...
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