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Three-dimensional hedgehog-shaped ZnO/SnO2 heterostructure and preparation method and application thereof

A heterogeneous structure and hedgehog technology, applied in the field of semiconductor detection materials and its preparation, can solve the problems of unreported ultraviolet detectors, and achieve the effect of being suitable for large-scale production and application, good stability, and great potential for development

Active Publication Date: 2020-12-11
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Special hedgehog-like ZnO / SnO is currently prepared by solution method 2 The method of heterostructure and its application in UV detectors has not been reported yet

Method used

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  • Three-dimensional hedgehog-shaped ZnO/SnO2 heterostructure and preparation method and application thereof
  • Three-dimensional hedgehog-shaped ZnO/SnO2 heterostructure and preparation method and application thereof
  • Three-dimensional hedgehog-shaped ZnO/SnO2 heterostructure and preparation method and application thereof

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Experimental program
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Effect test

Embodiment 1

[0035] This embodiment provides a hedgehog-shaped ZnO / SnO 2 A method for preparing a heterostructure, the method steps are as follows:

[0036] Step 1. The ITO substrate was ultrasonically cleaned in acetone, ethanol and deionized water for 20 minutes respectively.

[0037] Step 2. Deposit a 2 μm thick ZnO film on the ITO substrate under the conditions of an oxygen-argon ratio of 18:42 sccm, a working pressure of 1.5 Pa, and a sputtering power of 100 W by means of radio frequency sputtering; Put it into a vacuum tube annealing furnace at 450 ° C for 2 hours; place the above-mentioned annealed ZnO film with the conductive side facing up, and place it at the bottom of a beaker containing a 0.05mol / L stannous fluoride solution at room temperature, and react for 2 hours Take out the substrate, dry it naturally and anneal at 600 °C for 2 hours in the air, the product obtained is SnO 2 octahedron.

[0038] Such as figure 1 As shown, the SEM characterization results show that SnO ...

Embodiment 2

[0043] This embodiment provides a hedgehog-shaped ZnO / SnO 2 A method for manufacturing a heterostructure ultraviolet detector, the steps of the method are as follows:

[0044] The hedgehog shape ZnO / SnO synthesized in embodiment 1 2 The heterostructure is used as the working electrode, and the Pt electrode is used as the counter electrode, which will grow hedgehog-shaped ZnO / SnO 2 The ITO and Pt counter electrodes were hot-pressed at 140 °C for 14 seconds and connected together through a heat-sealing film, and the iodine electrolyte solution was injected into the device to prepare a hedgehog-shaped ZnO / SnO 2 Heterostructure UV detectors.

[0045] For the prepared hedgehog ZnO / SnO 2 The spectral response of the heterostructure device is tested, and the results are as follows Figure 4 shown. Depend on Figure 4 It can be seen that the hedgehog-like ZnO / SnO 2 The heterostructure UV detector has no response to visible light, but shows a strong photocurrent response to UV l...

Embodiment 3

[0048] The difference between this embodiment and embodiment 1 is: the hedgehog shape ZnO / SnO in embodiment 1 2 Heterostructure annealing treatment (400°C, under air, nitrogen or argon, heat preservation for 2 hours). After the sample is annealed, the crystal quality of the sample is improved, which helps to improve the ultraviolet detection performance of the device.

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Abstract

The invention discloses a three-dimensional hedgehog-shaped ZnO / SnO2 heterostructure and a preparation method and application thereof. The heterostructure is composed of ZnO nanorods and SnO2 octahedron blocks, the SnO2 octahedron blocks grow on a substrate, the ZnO nanorods grow on the surfaces of the SnO2 octahedron blocks, and the whole heterostructure is of a hedgehog-shaped structure. A large-area hedgehog-shaped ZnO / SnO2 heterostructure grows on a substrate by using a solution synthesis method, the hedgehog-shaped ZnO / SnO2 heterostructure further serves as a working electrode, Pt servesas a counter electrode, the two electrodes are connected through a heat sealing film, iodine electrolyte or deionized water is injected into the middle of a device, and an ultraviolet detector with good self-powered characteristics is obtained and the heterostructure and the method are applied to the field of ultraviolet detection. The method is simple to operate, low in cost and suitable for large-scale production, and has very high practical value.

Description

technical field [0001] The invention belongs to the technical field of semiconductor detection materials and their preparation, and relates to a hedgehog-shaped ZnO / SnO 2 Heterostructures and their preparation methods and their applications in ultraviolet detectors. Background technique [0002] Ultraviolet detectors are widely used in defense, military and civilian fields such as missile early warning, communication, and environmental monitoring. However, traditional ultraviolet detectors are bulky and require an external power supply. The cost of manufacturing and maintenance is high, which limits their practicality to a certain extent. application. Therefore, it can realize fast response to ultraviolet light and small signal detection without external voltage, and the low-cost and easy-to-fabricate semiconductor self-powered ultraviolet detector has become a current research hotspot. [0003] SnO 2 As a wide-bandgap (3.6 eV) semiconductor metal oxide, it is considered ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/20H01G9/042B82Y30/00B82Y40/00
CPCH01G9/2036H01G9/042B82Y30/00B82Y40/00Y02E10/542Y02P70/50
Inventor 高世勇王金忠任帅毛谋文张勇
Owner HARBIN INST OF TECH