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Perovskite thin film and preparation method and application thereof

A technology of perovskite and perovskite precursors, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problem of low exciton binding energy, low film quality, excessive grain growth, etc. problem, to achieve the effect of high exciton binding energy, low defect state density, and large exciton binding energy

Inactive Publication Date: 2021-01-22
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, organic-inorganic hybrid three-dimensional perovskites (that is, A is CH 3 NH 3 + or CH(NH 2 ) 2 + ) when preparing perovskite thin films, the crystal grains grow faster in the spin-coating crystallization process, so the grain size is larger, the film quality is not high, the exciton binding energy is low, and the thermal stability is not good, which will eventually lead to the prepared The performance of the device is poor, and the use of all-inorganic perovskites (that is, A is Cs + ) when preparing perovskite thin films, there are also the problems of too fast grain growth and too large grain size

Method used

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  • Perovskite thin film and preparation method and application thereof
  • Perovskite thin film and preparation method and application thereof
  • Perovskite thin film and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0059] A kind of perovskite film, its preparation method comprises the following steps:

[0060] 1) Add 0.1mmol (25.98mg) of CsI, 0.1mmol (21.28mg) of CsBr and 0.2mmol (92.2mg) of PbI 2 Add 1mL of dimethylformamide (DMF), heat to 60°C under nitrogen atmosphere, stir for 8h to obtain CsPbBr 0.5 I 2.5 Perovskite precursor solution;

[0061] 2) Add 0.16 mmol (27.664 mg) of ethyl ammonium iodide into 1 mL of dimethylformamide (DMF), heat to 60° C. under a nitrogen atmosphere, and stir for 4 hours to obtain ethyl ammonium iodide solution;

[0062] 3) Add 200 μL of CsPbBr 0.5 I 2.5 The perovskite precursor solution was mixed with 100 μL of ethyl ammonium iodide solution, heated to 50°C in a nitrogen atmosphere, kept for 12 hours, and then the obtained mixed solution was spin-coated. The spin-coating machine speed was 6000rmp, and the spin-coating time was 40s, and then put the obtained film on a heating platform for annealing, the annealing temperature is 85°C, and the annealin...

Embodiment 2

[0068] A kind of perovskite film, its preparation method comprises the following steps:

[0069] 1) Add 0.1mmol (25.98mg) of CsI, 0.1mmol (21.28mg) of CsBr and 0.2mmol (92.2mg) of PbI 2 Add 1mL of dimethylformamide (DMF), heat to 60°C under nitrogen atmosphere, stir for 8h to obtain CsPbBr 0.5 I 2.5 Perovskite precursor solution;

[0070] 2) Add 0.2 mmol (34.58 mg) of ethyl ammonium iodide into 1 mL of dimethylformamide (DMF), heat to 60° C. under a nitrogen atmosphere, and stir for 4 hours to obtain ethyl ammonium iodide solution;

[0071] 3) Add 200 μL of CsPbBr 0.5 I 2.5 The perovskite precursor solution was mixed with 100 μL of ethyl ammonium iodide solution, heated to 50°C in a nitrogen atmosphere, kept for 12 hours, and then the obtained mixed solution was spin-coated. The spin-coating machine speed was 6000rmp, and the spin-coating time was 40s, and then put the obtained film on a heating platform for annealing, the annealing temperature is 85°C, and the annealing ...

Embodiment 3

[0078] A kind of perovskite film, its preparation method comprises the following steps:

[0079] 1) Add 0.1mmol (25.98mg) of CsI, 0.1mmol (21.28mg) of CsBr and 0.2mmol (92.2mg) of PbI 2 Add 1mL of dimethylformamide (DMF), heat to 60°C under nitrogen atmosphere, stir for 8h to obtain CsPbBr 0.5 I 2.5 Perovskite precursor solution;

[0080] 2) Add 0.24 mmol (41.496 mg) of ethyl ammonium iodide into 1 mL of dimethylformamide (DMF), heat to 60° C. under a nitrogen atmosphere, and stir for 4 hours to obtain ethyl ammonium iodide solution;

[0081] 3) Add 200 μL of CsPbBr 0.5 I 2.5 The perovskite precursor solution was mixed with 100 μL of ethyl ammonium iodide solution, heated to 50°C in a nitrogen atmosphere, kept for 12 hours, and then the obtained mixed solution was spin-coated. The spin-coating machine speed was 6000rmp, and the spin-coating time was 40s, and then put the obtained film on a heating platform for annealing, the annealing temperature is 85°C, and the annealin...

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Abstract

The invention discloses a perovskite thin film and a preparation method and application thereof. The preparation method of the perovskite thin film comprises the following steps of 1) mixing CsI, CsBrand PbI2 to prepare a perovskite precursor solution, 2) preparing an ethyl ammonium iodide solution, and 3) mixing the perovskite precursor solution and the ethyl ammonium iodide solution, forming afilm, and annealing to obtain the perovskite thin film. Ethyl ammonium iodide is added into the perovskite precursor solution, then film forming is performed, inorganic perovskite crystals with very small particle sizes can be formed under the passivation effect of the ethyl ammonium iodide, and then the perovskite thin film with low defect state density, small grain size and high exciton bindingenergy is prepared.

Description

technical field [0001] The invention relates to the technical field of perovskite, in particular to a perovskite thin film and its preparation method and application. Background technique [0002] The general structural formula of perovskite is AMX 3 (A is CH 3 NH 3 + 、CH(NH 2 ) 2 + or Cs + , M is Pb 2+ , Sn 2+ 、Cu 2+ 、Ni 2+ , Mn 2 + , Fe 2+ 、Co 2+ or Eu 2+ , X is I - 、Br - or Cl - ), which have long carrier diffusion length, high light absorption coefficient, high photoluminescence quantum efficiency, and high defect tolerance. In recent years, perovskite materials have developed rapidly and have been widely used in solar cells, electroluminescent diodes, lasers, and detectors. Perovskite materials can change the forbidden band width by adjusting the type and ratio of halogen atoms, so as to realize the emission from near-infrared to blue light. At present, red and green perovskite electroluminescent devices with external quantum efficiency greater than ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56H01L51/50
CPCH10K71/12H10K71/40H10K50/11H10K71/00
Inventor 苏仕健刘鑫妍孟凡源孙冠伟
Owner SOUTH CHINA UNIV OF TECH
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