Process and equipment for removing aluminum by complexing chlorosilane

A chlorosilane and complexation technology, which is applied in the direction of silicon compounds, halosilanes, and silicon halide compounds, can solve the problems of aluminum removal process and equipment introduction without chlorosilane, and achieve the effect of reducing the content of aluminum impurities

Pending Publication Date: 2021-02-26
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

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  • Process and equipment for removing aluminum by complexing chlorosilane
  • Process and equipment for removing aluminum by complexing chlorosilane
  • Process and equipment for removing aluminum by complexing chlorosilane

Examples

Experimental program
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Effect test

example 1

[0063] The low-temperature complex aluminum removal agent and the liquid phase complex aluminum removal agent use sodium chloride, and the filling amount is 40% of the tank volume.

[0064] The 20°C mixture raw material containing 10ppm aluminum chloride is fed into the top position of the agitating settling tank, settled and separated, and the mixture at the bottom of the tank is dried and separated by a dryer to separate silicon powder and aluminum slag, and then condensed into the raw material buffer tank through the raw material condenser; After the chlorosilane mixture is filtered and separated by the filter of the stirring settling tank, it also enters the raw material buffer tank; the raw material is first pre-cooled to -5°C through the low-temperature complexation and aluminum removal heat exchanger, and then cooled to -30°C by the low-temperature cooler. The low-temperature complexation stirring tank filled with sodium chloride removes aluminum and then filters through...

example 2

[0066] Dimethylamine hydrochloride is selected as the low-temperature complexing aluminum removal agent and the liquid phase complexation aluminum removal agent, and the filling amount is 50% of the volume of the tank.

[0067] The 20°C mixture raw material containing 10ppm aluminum chloride is fed into the top position of the agitating settling tank, settled and separated, and the mixture at the bottom of the tank is dried and separated by a dryer to separate silicon powder and aluminum slag, and then condensed into the raw material buffer tank through the raw material condenser; The chlorosilane mixture is filtered and separated by the filter of the stirring and settling tank, and then enters the raw material buffer tank; the raw material is pre-cooled to 0°C through the low-temperature complexation and aluminum removal heat exchanger, and then cooled to -20°C by the low-temperature cooler before entering the storage tank. After the low-temperature complexation stirring tank ...

example 3

[0074] The low-temperature complexing aluminum removal agent and the liquid phase complexation aluminum removal agent are potassium chloride, and the gas phase complexation aluminum removal agent is a mixture of dimethylamine hydrochloride and sodium chloride loaded on activated alumina (equal mass mixing, load total mass score is 10%).

[0075]The 20°C mixture raw material containing 10ppm aluminum chloride is fed into the top position of the agitating settling tank, settled and separated, and the mixture at the bottom of the tank is dried and separated by a dryer to separate silicon powder and aluminum slag, and then condensed into the raw material buffer tank through the raw material condenser; After the chlorosilane mixture is filtered and separated by the filter of the stirring settling tank, it also enters the raw material buffer tank; the raw material is first pre-cooled to -5°C through the low-temperature complexation and aluminum removal heat exchanger, and then cooled...

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PUM

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Abstract

The invention relates to a process and equipment for removing aluminum by complexing chlorosilane. The low-temperature complexing aluminum removal process, the liquid-phase complexing aluminum removalprocess, the gas-phase complexing process and the high-pressure rectifying aluminum removal process are operated independently or in a combined mode to meet different chlorosilane purification requirements. A chlorosilane mixture filtered by the low-temperature complexing stirring tank filter and raw materials conveyed by the raw material buffer tank enter and exit the heat exchanger for heat exchange through low-temperature complexing aluminum removal, and effective utilization of energy is achieved. The low-temperature complexing aluminum removing agent, the liquid-phase aluminum removing agent and the gas-phase aluminum removing agent are long in service life and obvious in complexing aluminum removing effect. According to the process, various complexing aluminum removing agents can beselected for use, and high complexing aluminum removing performance can be kept under the condition of the technological operation range. The aluminum removal rate of chlorosilane is improved, the content of aluminum chloride in chlorosilane is reduced through the low-temperature complexing aluminum removal process and the liquid-phase complexing aluminum removal process, and finally the contentof aluminum in chlorosilane can be reduced to 0.001 ppm or below through the series gas-phase complexing aluminum removal process and the high-pressure rectification aluminum removal process.

Description

technical field [0001] The invention relates to the technical field of complexation and impurity removal, in particular to a process and equipment for purifying chlorosilane by using low-temperature complexation and liquid phase complexation to remove aluminum in the production process of polysilicon. In particular, it relates to a process and equipment for aluminum removal through chlorosilane complexation. Background technique [0002] Chlorosilanes are used in the synthesis of organosilanes, alkyl groups, aryl groups, and organic functional group chlorosilanes. They are the most basic monomers in organosilane coupling agents, and are also raw materials for the production of semiconductor silicon, single crystal silicon, and polycrystalline silicon. [0003] Photovoltaic power generation and semiconductor electronic components have an increasing demand for high-purity silicon. Among many methods for preparing high-purity silicon, industrially use metallurgical-grade silico...

Claims

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Application Information

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IPC IPC(8): C01B33/107
CPCC01B33/10778
Inventor 黄国强耿强王国锋苏国良王乃治
Owner TIANJIN UNIV
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