Preparation method of thermal interface material based on high-density graphene interconnection network structure

Abstract

The invention discloses a preparation method of a thermal interface material based on a high-density graphene interconnection network structure. The preparation method mainly comprises the following steps: taking copper powder with micron-scale or nano-scale particle size as a growth substrate, sintering and curing the copper powder by virtue of high temperature to form a porous interconnected foamy copper structure, and growing graphene on the surface of the copper powder by virtue of a chemical vapor deposition method to obtain a graphene-coated composite structure; then, etching the foamy copper frame by virtue of etching liquid to obtain a spongy graphene interconnection network framework; and finally, carrying out glue pouring and mechanical cutting to obtain a graphene/polymer composite thermal interface material. According to the preparation method, the graphene network can be grown in one step simply through the copper powder, then the foamy copper structure formed by the copper powder is etched off to obtain the spongy graphene interconnection network framework with high compactness and high heat conductivity coefficient, and finally, the mechanical strength and the use robustness of the spongy graphene interconnection network framework are improved through composite processing with a polymer. The method has the advantages of low cost, low defects, high heat conductivity coefficient and the like.

Description

technical field [0001] The invention relates to a method for preparing a thermal interface material, in particular to a method for preparing a thermal interface material based on a high-density graphene interconnection network structure, and belongs to the field of heat conduction and heat dissipation. Background technique [0002] Today, with the continuous integration of electronic products, efficient thermal management has become a core issue to ensure the reliability and service life of electronic equipment. In this regard, thermal interface materials can effectively help heat sources (such as semiconductor chips) transfer and dissipate the heat generated by them, so as to avoid performance degradation and even system failure of electronic equipment under overheating conditions. [0003] As a bridge between the heat source and the heat sink, the thermal interface material itself has good compressibility and high through-surface thermal conductivity. The former perfectly ...

AI Technical Summary

Problems solved by technology

However, graphene-based thermal interface materials in most current research reports are often difficult to show considerable improvement in thermal conductivity. The main reasons are: (1) graphene in polymers is difficult to form an effective interconnected network structure

Although graphene has ultra-high thermal conductivity in the plane direction, its through-surface thermal conductivity is far inferior. Therefore, the disordered and scattered arrangement of graphene in polymers will seriously inhibit the thermal conductivity of thermal interface materials; (2) Polymerization It is difficult to ensure high quality, high density and high loading capacity of graphene in materials

Graphene interconnection network can be realized by methods such as porous substrate growth or freeze-drying, in which the growth of porous substrate is severely restricted by the substrate, and the obtained interconnection network often has micron-scale pores, which is slightly insufficient in compactness, while freeze-drying The rule needs to be implemented in conjunction with the graphene redox method. It is difficult to avoid the defect of graphene during the processing process, resulting in a decrease in its quality, which in turn affects the overall thermal conductivity

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