Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of low-current-noise high-resistance-value dispersive chip resistor slurry

A technology of resistance paste and high resistance value, which is applied in the direction of conductive materials dispersed in non-conductive inorganic materials, coating resistance materials, cable/conductor manufacturing, etc., and can solve problems such as cracking on the surface of sintered film and easy agglomeration of powder , to achieve good dispersion of resistance, improve the pass rate, and reduce the effect of powder mixing and agglomeration

Active Publication Date: 2021-03-09
西安宏星电子浆料科技股份有限公司
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that the powder in the chip resistor slurry is easy to agglomerate, and at the same time solve various undesirable phenomena such as surface cracking, cells, and pinholes of the sintered film, and provide a low-current noise high-resistance dispersive chip resistor The preparation method of resistance paste, which can meet the requirements of various specifications and sizes of chip resistance 1206, 0805, 0603, 0402, 0201, 01005, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of low-current-noise high-resistance-value dispersive chip resistor slurry
  • Preparation method of low-current-noise high-resistance-value dispersive chip resistor slurry
  • Preparation method of low-current-noise high-resistance-value dispersive chip resistor slurry

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037]1. Take 50g of ruthenium oxide, 50g of lead ruthenate, 50g of glass powder, 50g of zirconium silicate, and 50g of manganese oxide, and add them to 100g of 2,5-dimethyl-3-hexyne-2 with a mass concentration of 0.2%, In the ethanol solution of 5-diol, disperse for 6 minutes at a speed of 20,000 rpm in a homogenizer, dry in a blast drying oven at 40-50°C, and store at a low temperature of 4°C.

[0038] 2. Take 8g of ruthenium oxide, 8g of lead ruthenate, 50g of glass powder, 4g of zirconium silicate, and 0.8g of manganese oxide after pretreatment in step 1, add them to 29.2g of organic carrier, stir evenly with a glass rod and place for 1h to complete infiltration ; Then use a mixer to mix the materials and use a three-roller to roll to obtain a sheet resistance slurry with a fineness of ≦5 μm.

Embodiment 2

[0040] 1. Take 50g of ruthenium oxide, 50g of lead ruthenate, 50g of glass powder, 50g of zirconium silicate, and 50g of manganese oxide, and add them to 100g of 2,5-dimethyl-3-hexyne-2 with a mass concentration of 0.5% respectively, 5-diol in ethanol solution, and disperse for 5 minutes at the speed of homogenizer at 16500 r / min, dry at 40-50°C in a blast drying oven, and store at a low temperature of 4°C.

[0041] 2. Take 8g of ruthenium oxide, 8g of lead ruthenate, 50g of glass powder, 4g of zirconium silicate, and 0.8g of manganese oxide after pretreatment in step 1, add them to 29.2g of organic carrier, stir evenly with a glass rod and place for 1h to complete infiltration ; Then use a mixer to mix the materials and use a three-roller to roll to obtain a sheet resistance slurry with a fineness of ≦5 μm.

Embodiment 3

[0043] 1. Take 50g of ruthenium oxide, 50g of lead ruthenate, 50g of glass powder, 50g of zirconium silicate, and 50g of manganese oxide, and add them to 100g of 2,5-dimethyl-3-hexyne-2 with a mass concentration of 0.8%, In the ethanol solution of 5-diol, disperse for 4 minutes at the speed of 15,000 rpm in a homogenizer, dry at 40-50°C in a blast drying oven, and store at a low temperature of 4°C.

[0044] 2. Take 8g of ruthenium oxide, 8g of lead ruthenate, 50g of glass powder, 4g of zirconium silicate, and 0.8g of manganese oxide after pretreatment in step 1, add them to 29.2g of organic carrier, stir evenly with a glass rod and place for 1h to complete infiltration ; Then use a mixer to mix the materials and use a three-roller to roll to obtain a sheet resistance slurry with a fineness of ≦5 μm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of low-current-noise high-resistance-value dispersive chip resistor paste, and the method comprises the following steps: respectively carrying out surfacetreatment on a conductive phase, glass powder and an inorganic additive powder material by using a small-molecular alkynediol surfactant, adding the materials into an organic carrier, and preparing the resistor paste with the fineness of less than or equal to 5 [mu]m by using a three-roller machine, wherein the small-molecular alkynediol surfactant is 2, 5-dimethyl-3-hexyne-2, 5-diol, 2, 4, 7, 9-tetramethyl-5-decyne-4, 7-diol or 3, 6-dimethyl-4-octyne-3, 6-diol. According to the invention, a small molecular alkynediol surfactant (relatively low in boiling point, volatile and non-decomposable)is adopted to carry out surface treatment on powder in the chip resistor slurry, so that the powder agglomeration phenomenon is greatly reduced, and the chip resistor prepared from the chip resistor slurry is compact in surface and free of cracking, pinholes and other undesirable phenomena; meanwhile, the outstanding advantages of low current noise and good resistance dispersity are achieved.

Description

technical field [0001] The invention belongs to the technical field of resistance paste, and in particular relates to a method for preparing a sheet type resistance paste with low current noise and good resistance value dispersion. Background technique [0002] In the 21st century, people are inseparable from electronic products, and cannot imagine life without the Internet and smart electronic products. At present, light, small and thin has become the mainstream development trend of electronic products, which requires electronic components to be as small as possible while improving performance. Resistors, as functional components, play a decisive role in the stable operation of the entire circuit. Traditional resistor pastes have long been unable to meet the requirements, and these markets are currently occupied by chip resistor pastes developed by DuPont of the United States and Sumitomo of Japan. [0003] Like the traditional resistor paste, the chip resistor paste is al...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01C17/06H01B13/00H01B1/20
CPCH01C17/06H01B13/00H01B1/20
Inventor 兰金鹏陆冬梅王要东王妮周宝荣张帅马倩张豪
Owner 西安宏星电子浆料科技股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com