A preparation method of low-current-noise high-resistance dispersive chip resistor paste

A technology of resistance paste and high resistance value, which is applied in the direction of conductive materials dispersed in non-conductive inorganic materials, coating resistance materials, cable/conductor manufacturing, etc., and can solve problems such as easy powder agglomeration and sintered film surface cracking , to achieve good resistance dispersion, compact surface, and reduce the effect of mixing powder agglomeration

Active Publication Date: 2021-12-21
西安宏星电子浆料科技股份有限公司
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that the powder in the chip resistor slurry is easy to agglomerate, and at the same time solve various undesirable phenomena such as surface cracking, cells, and pinholes of the sintered film, and provide a low-current noise high-resistance dispersive chip resistor The preparation method of resistance paste, which can meet the requirements of various specifications and sizes of chip resistance 1206, 0805, 0603, 0402, 0201, 01005, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A preparation method of low-current-noise high-resistance dispersive chip resistor paste
  • A preparation method of low-current-noise high-resistance dispersive chip resistor paste
  • A preparation method of low-current-noise high-resistance dispersive chip resistor paste

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037]1. Take 50g of ruthenium oxide, 50g of lead ruthenate, 50g of glass powder, 50g of zirconium silicate, and 50g of manganese oxide, and add them to 100g of 2,5-dimethyl-3-hexyne-2 with a mass concentration of 0.2%, In the ethanol solution of 5-diol, disperse for 6 minutes at a speed of 20,000 rpm in a homogenizer, dry in a blast drying oven at 40-50°C, and store at a low temperature of 4°C.

[0038] 2. Take 8g of ruthenium oxide, 8g of lead ruthenate, 50g of glass powder, 4g of zirconium silicate, and 0.8g of manganese oxide after pretreatment in step 1, add them to 29.2g of organic carrier, stir evenly with a glass rod and place for 1h to complete infiltration ; Then use a mixer to mix the materials and use a three-roller to roll to obtain a sheet resistance slurry with a fineness of ≦5 μm.

Embodiment 2

[0040] 1. Take 50g of ruthenium oxide, 50g of lead ruthenate, 50g of glass powder, 50g of zirconium silicate, and 50g of manganese oxide, and add them to 100g of 2,5-dimethyl-3-hexyne-2 with a mass concentration of 0.5% respectively, 5-diol in ethanol solution, and disperse for 5 minutes at the speed of homogenizer at 16500 r / min, dry at 40-50°C in a blast drying oven, and store at a low temperature of 4°C.

[0041] 2. Take 8g of ruthenium oxide, 8g of lead ruthenate, 50g of glass powder, 4g of zirconium silicate, and 0.8g of manganese oxide after pretreatment in step 1, add them to 29.2g of organic carrier, stir evenly with a glass rod and place for 1h to complete infiltration ; Then use a mixer to mix the materials and use a three-roller to roll to obtain a sheet resistance slurry with a fineness of ≦5 μm.

Embodiment 3

[0043] 1. Take 50g of ruthenium oxide, 50g of lead ruthenate, 50g of glass powder, 50g of zirconium silicate, and 50g of manganese oxide, and add them to 100g of 2,5-dimethyl-3-hexyne-2 with a mass concentration of 0.8%, In the ethanol solution of 5-diol, disperse for 4 minutes at the speed of 15,000 rpm in a homogenizer, dry at 40-50°C in a blast drying oven, and store at a low temperature of 4°C.

[0044] 2. Take 8g of ruthenium oxide, 8g of lead ruthenate, 50g of glass powder, 4g of zirconium silicate, and 0.8g of manganese oxide after pretreatment in step 1, add them to 29.2g of organic carrier, stir evenly with a glass rod and place for 1h to complete infiltration ; Then use a mixer to mix the materials and use a three-roller to roll to obtain a sheet resistance slurry with a fineness of ≦5 μm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
Login to view more

Abstract

The invention discloses a method for preparing a low-current-noise, high-resistance dispersive sheet-type resistor slurry. The conductive phase, glass powder, and inorganic additive powder materials are respectively surface-treated with a small-molecule acetylenic glycol surfactant. , added to an organic carrier, and prepared into a resistance slurry with a fineness of ≤5 μm using a three-roller machine, wherein the small molecule acetylenic glycol surfactant is 2,5-dimethyl-3-hexyne-2, 5-diol, 2,4,7,9-tetramethyl-5-decyne-4,7-diol or 3,6-dimethyl-4-octyne-3,6-diol. The present invention uses a small molecule acetylenic glycol surfactant (relatively low boiling point, volatile, non-decomposing) to surface-treat the powder in the chip resistance slurry, greatly reducing the powder agglomeration phenomenon, and the prepared The surface of the chip resistor is compact, without cracks, pinholes and other undesirable phenomena, and has the outstanding advantages of low current noise and good resistance value dispersion.

Description

technical field [0001] The invention belongs to the technical field of resistance paste, and in particular relates to a method for preparing a sheet type resistance paste with low current noise and good resistance value dispersion. Background technique [0002] In the 21st century, people are inseparable from electronic products, and cannot imagine life without the Internet and smart electronic products. At present, light, small and thin has become the mainstream development trend of electronic products, which requires electronic components to be as small as possible while improving performance. Resistors, as functional components, play a decisive role in the stable operation of the entire circuit. Traditional resistor pastes have long been unable to meet the requirements, and these markets are currently occupied by chip resistor pastes developed by DuPont of the United States and Sumitomo of Japan. [0003] Like the traditional resistor paste, the chip resistor paste is al...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01C17/06H01B13/00H01B1/20
CPCH01C17/06H01B13/00H01B1/20
Inventor 兰金鹏陆冬梅王要东王妮周宝荣张帅马倩张豪
Owner 西安宏星电子浆料科技股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap