Defect passivation method for solving problem of luminous decay of copper-indium-gallium-selenium solar cell

A solar cell, copper indium gallium selenide technology, applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problems affecting the normal use power and expected service life of copper indium gallium selenide thin film solar cells Attenuation, battery photoelectric conversion efficiency decline and other problems, to achieve the effect of improving photoelectric conversion efficiency, reducing light attenuation, and reducing defect density

Active Publication Date: 2021-03-19
ZHEJIANG SHANGYUE OPTOELECTRONICS TECH
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Problems solved by technology

[0005] 2. Under long-term outdoor use, under the excitation of light and the action of water vapor, the AZO layer will undergo hydration, and a part of ZnO will gradually form Zn(OH) 2 Lead to the decline of the electrical performance of the battery sheet and the phenomenon of light decay
[0006] 3. During the preparation of the absorber layer, the Mo layer of the back electrode will form MoSe with Se 2 layer, if MoSe 2 The layer is too thin. During the use of CIGS batteries, the Mo layer is easily oxidized to form MoO under the action of water vapor and temperature. x , while Na + Enter MoO x Oxygen reduction reaction occurs in the matrix:, Na x MoO 3 Different sodium contents in lead to different conductivities and make Na + Diffusion to the film layer, this phenomenon leads to light decay of CIGS cells
[0007] Under the existing process preparation method, the copper indium gallium selenium thin film solar cell is prone to light decay during the actual use outdoors, and the photoelectric conversion efficiency of the battery will drop significantly after being used outdoors for a long time under high humidity, affecting The normal use power and expected service life of copper indium gallium selenide thin film solar cells

Method used

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  • Defect passivation method for solving problem of luminous decay of copper-indium-gallium-selenium solar cell
  • Defect passivation method for solving problem of luminous decay of copper-indium-gallium-selenium solar cell
  • Defect passivation method for solving problem of luminous decay of copper-indium-gallium-selenium solar cell

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Embodiment approach

[0041] A defect passivation method for solving the light decay problem of copper indium gallium selenide solar cells, comprising the following steps:

[0042] (1) Deposit the Mo back electrode on the substrate; the thickness of the Mo back electrode is 450-550nm.

[0043] (2) Deposit an alkali metal pre-layer on the Mo back electrode first, and then deposit a copper indium gallium selenium light absorption layer. The thickness of the alkali metal pre-layer is 2-20nm, and the material of the alkali metal pre-layer is selected from NaF, KF, and RbF , one of CsF. The thickness of the CIGS light absorbing layer is 1.0-3.0 μm. Depositing the copper indium gallium selenium light absorption layer adopts a three-step co-evaporation method, the first step: raise the substrate temperature to 300-450 ° C, and co-evaporate In, Ga, Se, and the deposition thickness is 0.5-1.2 μm, where 0.2≤Ga / (In+Ga)≤0.5; the second step: raise the substrate temperature to 450-650°C, co-evaporate Cu and Se...

Embodiment 1

[0052] 1. A layer of Mo back electrode with a thickness of 500nm is covered on the stainless steel substrate by magnetron sputtering.

[0053] 2. In a vacuum of 1×10 -3 The temperature of the substrate was raised to 300°C in the co-evaporation chamber of Pa, and a layer of NaF was co-evaporated on the surface of the Mo layer. The temperature of the NaF evaporation source was 765°C, and the evaporation time was 10 minutes.

[0054] The first step of deposition: raise the substrate temperature to 550°C, and co-evaporate In, Ga, and Se, where the In evaporation source temperature is 1040°C, the Ga evaporation source temperature is 1120°C, the Se evaporation source temperature is 460°C, and the evaporation time is 10min.

[0055] The second step of deposition: keep the substrate temperature constant, evaporate Cu and Se, wherein the temperature of Cu evaporation source is 1350°C, the temperature of Se evaporation source is 480°C, and the evaporation time is 20min.

[0056] The t...

Embodiment 2

[0064] 1. Cover a layer of Mo back electrode with a thickness of 500nm on the stainless steel substrate by magnetron sputtering;

[0065] 2. In a vacuum of 1×10 -3 Raise the substrate temperature to 280°C in the co-evaporation chamber of Pa, co-evaporate a NaF layer on the surface of the Mo layer, the NaF evaporation source temperature is 770°C, and the evaporation time is 10min.

[0066] The first step of deposition: raise the substrate temperature to 525°C, and co-evaporate In, Ga, and Se, where the In evaporation source temperature is 1060°C, the Ga evaporation source temperature is 1130°C, the Se evaporation source temperature is 465°C, and the evaporation time is 10min.

[0067] The second step of deposition: keep the substrate temperature constant, evaporate Cu and Se, wherein the temperature of Cu evaporation source is 1380°C, the temperature of Se evaporation source is 480°C, and the evaporation time is 19min.

[0068] The third step of deposition: keep the substrate...

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Abstract

The invention discloses a defect passivation method for solving the problem of luminous decay of a copper-indium-gallium-selenium solar cell. The defect passivation method comprises the following steps: (1) depositing a Mo back electrode on a substrate; (2) depositing a copper-indium-gallium-selenium light absorption layer on the Mo back electrode; (3) depositing a CdS buffer layer on the CIGS light absorption layer; (4) depositing a high-resistance i-ZnO layer and a ZnO:Al window layer on the CdS buffer layer to form the copper indium gallium diselenide solar cell; and (5) performing defect passivation treatment on the copper-indium-gallium-selenium solar cell. The defect density of the copper-indium-gallium-selenium solar cell can be effectively reduced, the optimal service life of the copper-indium-gallium-selenium thin-film solar cell is prolonged, and the actual use power of the outdoor copper-indium-gallium-selenium thin-film solar cell is improved.

Description

technical field [0001] The invention relates to the technical field of solar cell production, in particular to a defect passivation method for solving the light attenuation problem of copper indium gallium selenide solar cells. Background technique [0002] With the increasingly serious energy crisis, people pay more and more attention to renewable energy. Among them, solar energy has become the most potential technology because of its inexhaustible, clean and pollution-free technology. Silicon-based solar technology is currently the most mature. , is also the highest market share, but it is limited by the high energy consumption and high pollution preparation process, so it cannot become the most ideal solar technology. In recent years, thin film solar technology has begun to rise. Because thin film batteries have light weight and low cost , easy installation and other advantages, once proposed, there has been rapid development. Among them, copper indium gallium selenium th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0749
CPCH01L31/1864H01L31/1868H01L31/0749Y02P70/50
Inventor 胡煜霖刘宽菲任宇航
Owner ZHEJIANG SHANGYUE OPTOELECTRONICS TECH
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