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Low-dielectric polyimide film and preparation method thereof

A polyimide film and polyimide technology, applied in the field of microelectronics, can solve the problems of unsatisfactory and high dielectric constant, and achieve lower dielectric constant, good heat resistance, good thermal stability and mechanical properties. Effect

Inactive Publication Date: 2021-04-09
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the dielectric constant of traditional polyimide is relatively high (k=3.0-3.4), which cannot meet the requirements of current dielectric materials (k<2.8)

Method used

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  • Low-dielectric polyimide film and preparation method thereof
  • Low-dielectric polyimide film and preparation method thereof
  • Low-dielectric polyimide film and preparation method thereof

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preparation example Construction

[0031] In the embodiment of the present invention, the preparation method of the low dielectric polyimide film comprises the following steps,

[0032] (1) Add tris(4-aminophenyl)amine to the polyamic acid solution with a mass concentration of 10-20%, stir to obtain a polyamic acid solution containing a cross-linked structure, and cast the polyamic acid solution evenly onto a glass plate placed in a vacuum oven to remove air bubbles and dry. In the present invention, the polyamic acid solution is polymerized in situ in a polar solvent by biphenyltetracarboxylic dianhydride (BPDA), 1,4-bis(4-amino-2-trifluoromethylphenoxy)benzene (6FAPB) get, the condition is N 2 In the atmosphere, stir at room temperature for 3 to 8 hours; the selected polar solvent of the present invention is N, N-dimethylformamide (DMF), N, N-dimethylacetamide (DMAC), N-methylpyrrolidone (NMP); in the present invention, the selected time for removing air bubbles is 3 to 10 minutes.

[0033] (2) Place the d...

Embodiment 1

[0038] Dissolve 0.5090g 6FAPB in 3.927ml DMAC, stir until completely dissolved; then add 0.3530g BPDA in three batches, and 2 Stir at room temperature for 5 h in an atmosphere to obtain a homogeneous viscous solution with a mass concentration of 18%. Then add 0.0023g of TPA, stir in an ice-water bath for 5 minutes, and after it is completely dissolved, place the above mixed system in a vacuum oven at 60°C for 3 minutes to remove air bubbles. Finally, cast it on a dry glass plate by casting method, place it in a blast drying oven, and carry out thermal amidation in a temperature gradient of 80-300°C (80°C, 100°C, 200°C, 300°C for 1h each) , the heating rate is 6°C / min), the cross-linked polyimide film PI-1 can be obtained, and its dielectric constant is 2.15 (f=10 7 Hz).

Embodiment 2

[0040] Dissolve 0.5040g 6FAPB in 3.927ml DMAC, stir until completely dissolved; then add 0.3530g BPDA in batches, and 2 Stir at room temperature for 5 h in an atmosphere to obtain a homogeneous viscous solution with a mass concentration of 18%. Then add 0.0050g TPA, stir in an ice-water bath for 5 minutes, and after it is completely dissolved, put the above mixed system in a vacuum drying oven to remove air bubbles for 3 minutes. Finally, cast it on a dry glass plate by casting method, place it in a blast drying oven, and carry out thermal amidation in a temperature gradient of 80-300°C (80°C, 100°C, 200°C, 300°C for 1h each) , the heating rate is 6°C / min), the cross-linked polyimide film PI-2 can be obtained, and its dielectric constant is 1.76 (f=10 7 Hz).

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Abstract

The invention discloses a low-dielectric polyimide film and a preparation method thereof, and belongs to the technical field of microelectronics. According to the polyimide film, biphenyltetracarboxylic dianhydride (BPDA) and 1, 4-bis(4-amino-2-trifluoromethyl phenoxy) benzene (6FAPB) are adopted as monomers, tri (4-aminophenyl)amine(TPA) is adopted as a cross-linking agent, the film with the thickness of 5-15 microns is prepared through an in-situ polymerization method, and the dielectric constant of the film is 1.76-2.80. The molar ratio of the total amount of amino groups to the total amount of anhydride groups involved in the polymerization process is 1: 1, and the molar percentage of the number of amino groups in the tri(4-aminophenyl) amine in the total number of amino groups is 0.1-20.0%. The film has the characteristics of low dielectric constant, stable thermodynamic property and good processability, and has a wide application prospect in the fields of flexible circuit boards, microelectronic packaging and the like.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a low-dielectric polyimide film and its preparation method and application. Background technique [0002] In recent years, the development of ultra-large-scale circuits and microelectronics industry has made electronic and electrical equipment more integrated and miniaturized. At the same time, it also brings problems such as signal transmission delay, crosstalk, increased loss, and increased interconnection resistance-capacitance between metal layers, which has gradually become a bottleneck restricting the development of microelectronics technology. Therefore, new challenges are presented to the current traditional interlayer dielectric materials. [0003] As a high-performance polymer material with an imide ring structure, polyimide has a temperature resistance of up to 400°C and is widely used because of its excellent mechanical properties, corrosion resistance, and ...

Claims

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Application Information

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IPC IPC(8): C08J5/18C08J3/24C08G73/10C08L79/08
CPCC08G73/101C08G73/1039C08G73/1071C08J3/24C08J5/18C08J2379/08
Inventor 查俊伟董晓迪郑明胜
Owner UNIV OF SCI & TECH BEIJING
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