Silicon carbide whisker ceramic with typical long particle morphology and rich in lamination faults and twin crystals and preparation method thereof

A technology of silicon carbide whiskers and ceramics, which is applied in the field of preparation of silicon carbide whiskers ceramics, can solve the problems of limited matrix reinforcement effect, large dispersion of whisker aspect ratio, and failure to retain whisker structure, so as to avoid secondary regeneration Effects of crystallization, high fracture toughness, and rich twin structure

Active Publication Date: 2021-04-13
WUHAN UNIV OF TECH
View PDF7 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when silicon carbide whiskers are introduced into the ceramic matrix, they are not easily dispersed in the matrix due to the large aspect ratio of the whiskers. Therefore, the amount of addition in the ceramic matrix is ​​generally small. The whisker structure cannot be retained in the sintered ceramic due to the reaction, so the reinforcing effect on the matrix is ​​limited

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon carbide whisker ceramic with typical long particle morphology and rich in lamination faults and twin crystals and preparation method thereof
  • Silicon carbide whisker ceramic with typical long particle morphology and rich in lamination faults and twin crystals and preparation method thereof
  • Silicon carbide whisker ceramic with typical long particle morphology and rich in lamination faults and twin crystals and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Weigh 15.39g of yttrium oxide, 12.54g of aluminum oxide, and 22.07g of silicon oxide respectively, add the powder into the ball mill tank for mixing with a planetary ball mill for 6 hours, the mass ratio of material to ball is 1:2, and weigh 50g of absolute ethanol And 100g of silicon nitride balls are used as the ball milling medium, and the ball milling speed is 100r / min. The mixed slurry was dried by rotary evaporation at 60°C and vacuum oven at 60°C to obtain sintering aid powder. Weigh 10g of pure silicon carbide whiskers and 2g of sintering aid powder, add the two raw materials together into the ball mill tank for mixing for 6 hours, the mass ratio of material to ball is 1:2, weigh 30g of absolute ethanol and 24g of silicon nitride balls As the ball milling medium, the ball milling speed is 100r / min. The mixed ceramic slurry was dried by rotary evaporation at 60°C and vacuum oven at 60°C to obtain ceramic powder. Select 2g of dried ceramic powder, grind it with ...

Embodiment 2

[0031] Weigh 15.39g of yttrium oxide, 12.54g of aluminum oxide, and 22.07g of silicon oxide respectively, add the powder into the ball mill tank for mixing with a planetary ball mill for 8 hours, the mass ratio of material to ball is 1:2, and weigh 50g of absolute ethanol And 100g of silicon nitride balls are used as the ball milling medium, and the ball milling speed is 100r / min. The mixed slurry was dried by rotary evaporation at 60°C and vacuum oven at 60°C to obtain sintering aid powder. Weigh 10g of pure silicon carbide whiskers and 2g of sintering aid powder, add the two materials together into a ball mill tank for planetary ball mill mixing for 8 hours, the mass ratio of material to ball is 1:2, weigh 30g of absolute ethanol and 24g of nitrogen Silica balls were used as the ball milling medium, and the ball milling speed was 100r / min. The mixed ceramic slurry was dried by rotary evaporation at 60°C and vacuum oven at 60°C to obtain ceramic powder. Select 2g of dried c...

Embodiment 3

[0035] Weigh 15.39g of yttrium oxide, 12.54g of aluminum oxide, and 22.07g of silicon oxide respectively, add the powder into the ball mill tank and mix with planetary ball mill for 10 hours, the mass ratio of material to ball is 1:2, and weigh 50g of absolute ethanol And 100g of silicon nitride balls are used as the ball milling medium, and the ball milling speed is 100r / min. The mixed slurry was dried by rotary evaporation at 60°C and vacuum oven at 60°C to obtain sintering aid powder. Weigh 10g of pure silicon carbide whiskers and 2g of sintering aid powder, add the two raw materials together into a ball mill tank for planetary ball mill mixing for 10h, the mass ratio of material to ball is 1:2, weigh 30g of absolute ethanol and 24g of nitrogen Silica balls were used as the ball milling medium, and the ball milling speed was 100r / min. The mixed ceramic slurry was dried by rotary evaporation at 60°C and vacuum oven at 60°C to obtain ceramic powder. Select 2g of dried ceram...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Vickers hardnessaaaaaaaaaa
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a silicon carbide whisker ceramic with typical long particle morphology and rich in lamination faults and twin crystals and a preparation method thereof. The preparation method comprises the steps that by taking beta-silicon carbide whiskers as a raw material, a high-temperature liquid-phase sintering aid Y2O3-Al2O3-SiO2 is added into the silicon carbide whiskers; in the high-temperature sintering process, gaps among silicon carbide whisker frameworks are filled through flowing of the liquid-phase sintering aid under pressure, so that abnormal growth and secondary recrystallization of the whiskers in the high-temperature sintering process are avoided while densification of the silicon carbide whiskers is realized, and the silicon carbide whisker long particle morphology and abundant twin crystals, dislocation and other microstructures are retained in the sintered silicon carbide ceramic. The silicon carbide ceramic obtained through the method has the advantages of being uniform in structure, high in whisker morphology retention degree, high in compactness, good in mechanical property and the like.

Description

technical field [0001] The invention belongs to the field of carbide structure ceramics, in particular to a method for preparing silicon carbide whisker ceramics with typical long-grain morphology, rich in stacking faults and twins, and excellent mechanical properties. Background technique [0002] As an important structural ceramic material, silicon carbide ceramics have the advantages of high strength, high hardness, wear resistance, corrosion resistance, high thermal conductivity and good thermal shock resistance, and are widely used in high temperature kiln furniture materials, bulletproof armor materials, wear-resistant materials and other fields. However, the high covalent bond characteristics of silicon carbide and its extremely low diffusion coefficient make it difficult to sinter and densify, and the obtained ceramic properties are greatly affected by its microstructure (grain size and aspect ratio and second equal). It is of great significance to improve the mecha...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/81C04B35/565C04B35/645
CPCC04B35/565C04B35/645C04B2235/5276C04B2235/77C04B2235/96C04B2235/3418C04B2235/3217C04B2235/3225C04B2235/6562C04B2235/6567C04B2235/666
Inventor 邹冀赵晓青王为民傅正义
Owner WUHAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap