3results about How to "No obvious defects" patented technology

The application discloses a graphene modified aluminum-based composite plate and a preparation method thereof, which comprises the following components in terms of mass ratio: aluminum alloy: ceramic: alkyl magnesium solution: graphene = 4500-5000: 10-50: 1000: 1; the ceramic particle size is 0.05-50 mu m; the aluminum alloy particle size is 10-100 mu m; the composite plate provided by the application has a tensile strength of up to 512 MPa, a yield strength of up to 407 MPa, and a corrosion rate of only 0.9 g / m 2 d, and the preparation method is simple and efficient.

In the field of electrode construction in the alkaline water electrolysis hydrogen production industry, a catalytic electrode prepared by an existing method has the problems of poor activity, poor stability and the like. The invention discloses a preparation method of an alkaline water hydrogen evolution electrode with flat and compact surface appearance. The method comprises the following steps: (1) preparing a compact catalyst precursor on the surface of a current collector in a pulse electroplating manner; (2) densification treatment; (3) constructing an active substance catalytic layer by electrochemical ultrashort pulse; and (4) carrying out secondary annealing to finally prepare the high-activity and high-stability electrolytic water gassing catalytic electrode.

This application provides a low-resistivity polycrystalline silicon carbide bulk material and its preparation method and apparatus. The method involves using isostatically pressed graphite as a substrate, first loading it into a reaction mechanism and creating a sealed negative pressure environment through vacuum. Then, the furnace body is heated in sections to a set deposition temperature. Subsequently, argon, hydrogen, methyltrichlorosilane, and nitrogen are sequentially introduced to achieve the set pressure within the furnace, and deposition is carried out at this temperature to obtain a silicon carbide deposit. Finally, the gas supply is stopped, the gas inside the furnace is replaced with nitrogen, and the product is removed after controlled cooling to room temperature. Through vacuum sealing, sectioned temperature control, precise gas supply, and stable pressure deposition, the uniform distribution of reaction gases and the full progress of the reaction are effectively ensured, significantly improving the density, thickness uniformity, and compositional stability of the silicon carbide deposit. Simultaneously, stable nitrogen doping is achieved, resulting in a low-resistivity, high-purity, crack-free, and defect-free polycrystalline silicon carbide bulk material. The process offers strong controllability and good product consistency, meeting the stringent application requirements of high-end industrial fields.