Plating method of high silicon aluminum alloy

A high-silicon aluminum alloy, plating solution technology, applied in liquid chemical plating, metal material coating process, coating and other directions, can solve the problems of low yield of shell materials, uneven metal coating, unstable product performance, etc. , to ensure the performance of the coating, reduce the production cost, and eliminate the internal stress of the nickel layer

Active Publication Date: 2017-10-31
长沙博朗思达新材料科技有限公司
View PDF4 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Generally, nickel and gold are plated on the surface of high-silicon aluminum alloys to improve wettability, but there are a large amount of non-metallic silicon in high-silicon aluminum alloys, the conductivity of the material is worse than that of ordinary aluminum alloys, and the metal coating obtained by direct electroplating is uneven. , The binding force is poor, the

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Plating method of high silicon aluminum alloy
  • Plating method of high silicon aluminum alloy
  • Plating method of high silicon aluminum alloy

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0081] Plating of high-silicon aluminum alloy with a silicon content of 27%.

[0082] 1) Degreasing. Put the high-silicon aluminum alloy with a silicon content of 27wt% after machining in an acetone solution at room temperature to clean and remove oil for 10 minutes, and dry at room temperature;

[0083] 2) coarsening. The formula is 300ml / L of nitric acid, 100ml / L of hydrofluoric acid, 100ml / L of hydrogen peroxide and water. , washed with clean water, then ultrasonically washed for 20 minutes, and dried in a 60°C drying oven;

[0084] 3) Once activated. The formula is nickel acetate 60g / L, sodium dihydrogen phosphate 80g / L and water. The mixed solution is 1L. The activation solution is heated to 160°C. During the activation process, the fluctuation does not exceed 5°C. Gently shake in the oven for 10 minutes, take it out, wash it with water, and dry it in a 60°C drying oven;

[0085] 4) Electroless nickel plating. The formula is 70g / L of nickel sulfate, 60g / L of sodium ...

Embodiment 2

[0094] High-silicon aluminum alloy plating with a silicon content of 42%.

[0095] 1) Degreasing. After machining, the high-silicon aluminum alloy with a silicon content of 42% was cleaned and degreased in an acetone solution at room temperature for 10 minutes, and dried at room temperature;

[0096] 2) coarsening. The formula is 290ml / L of nitric acid, 110ml / L of hydrofluoric acid, 100ml / L of hydrogen peroxide and water. , washed with clean water, then ultrasonically washed for 20 minutes, and dried in a 60°C drying oven;

[0097] 3) Once activated. The formula is nickel acetate 65g / L, sodium dihydrogen phosphate 85g / L and water. The mixed solution is 1L. The activation solution is heated to 160°C. During the activation process, the fluctuation does not exceed 5°C. Place the sample in the activation solution Gently shake in the middle of the oven for 12 minutes, take it out, wash it with water, and dry it in a drying oven at 60°C;

[0098]4) Electroless nickel plating. ...

Embodiment 3

[0107] Plating of high-silicon aluminum alloy with 50% silicon content.

[0108] 1) Degreasing. After machining, the high-silicon aluminum alloy with a silicon content of 50% was washed and degreased in an acetone solution at room temperature for 10 minutes, and dried in the air at room temperature; 2) coarsening. The formula is 290ml / L of nitric acid, 115ml / L of hydrofluoric acid, 100ml / L of hydrogen peroxide and water. , washed with clean water, then ultrasonically washed for 20 minutes, and dried in a 60°C drying oven;

[0109] 3) Once activated. The formula is nickel acetate 70g / L, sodium dihydrogen phosphate 90g / L and water. The mixed solution is 1L. The activation solution is heated to 160°C. During the activation process, the fluctuation does not exceed 5°C. Gently shake in the middle of the oven for 12 minutes, take it out, wash it with water, and dry it in a drying oven at 60°C;

[0110] 4) Electroless nickel plating. The formula is 80g / L of nickel sulfate, 70g / L...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a plating method of a high silicon aluminum alloy, is suitable for the high silicon aluminum alloy, the silicon content of which is 27-60%, and belongs to the field of metal surface modification. The plating method comprises the following basic steps: deoiling; coursing; primary activating; chemical nickel preplating; primary nickel plating; thermal treatment; secondary activating; secondary nickel plating; and gold-plating. The high silicon aluminum alloy obtained by the plating method is uniform in plating layer and good to combine, bubbling, falling or color-changing phenomena after a high-temperature roasting experiment are avoided, and the air tightness after welding packaging achieves operating requirements.

Description

Technical field: [0001] The invention belongs to the field of metal surface modification, and relates to a plating method for a high-silicon aluminum alloy, which is suitable for a method with a silicon content of [0002] 27% to 60% high silicon aluminum alloy. technical background [0003] High-silicon aluminum alloy has a low coefficient of thermal expansion (CTE: 7×10 -6 ~20×10 -6 K -1 , adjustable), high thermal conductivity (TC: 130~180W·m -1 ·K -1 , adjustable), low density (about 2.5g·cm -3 ), good mechanical properties, and good precision processing performance, it is recognized as the "third-generation electronic packaging material" in the world, and has been successfully used in the packaging of microwave components in military aerospace, aviation and other fields. [0004] Electronic packaging materials are required to have anti-rust, anti-mildew and good electrical contact performance during use, and at the same time realize reliable welding with connector...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C25D5/14C25D5/44C23C18/34C23C18/18
CPCC23C18/1653C23C18/1844C23C18/34C25D5/14C25D5/44
Inventor 王日初
Owner 长沙博朗思达新材料科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap