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Preparation method of MEMS pressure-sensitive film based on concentrated boron doping

A pressure-sensitive film, concentrated boron technology, applied in the process of producing decorative surface effects, coupling of optical waveguides, measuring fluid pressure, etc., can solve the problems of capacitance measurement error, large resistivity, etc.

Pending Publication Date: 2021-04-20
LANZHOU INST OF PHYSICS CHINESE ACADEMY OF SPACE TECH
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Problems solved by technology

[0003] The existing MEMS pressure-sensitive film adopts ordinary single crystal silicon and lightly doped P-type film, and its resistivity is relatively large. For the MEMS capacitive film vacuum gauge, since the rated capacitance of the MEMS device is about several picofarads , and the capacitance change is a few femtofarads or even smaller, which will lead to a large error in capacitance measurement; in addition, in order to meet the measurement needs, the thickness of the MEMS pressure-sensitive film is generally required to be very small, generally a few microns, and ordinary corrosion The process is difficult to accurately prepare thin films with a thickness of several microns

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  • Preparation method of MEMS pressure-sensitive film based on concentrated boron doping
  • Preparation method of MEMS pressure-sensitive film based on concentrated boron doping
  • Preparation method of MEMS pressure-sensitive film based on concentrated boron doping

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Embodiment Construction

[0020] The present invention will be described in detail below with reference to the accompanying drawings and examples.

[0021] A method for preparing a MEMS pressure-sensitive thin film based on concentrated boron doping provided by the invention, the manufacturing process is as follows: figure 1 As shown, it specifically includes the following steps:

[0022] Step 1. Use the configured cleaning solution to clean the silicon wafer. The silicon wafer after cleaning is as follows: figure 1 Shown in number ①.

[0023] The cleaning solution includes No. 1 liquid, No. 2 liquid and No. 3 liquid. Among them, No. 1 liquid is a mixture of ammonia water, hydrogen peroxide and deionized water, and the ratio is ammonia water: hydrogen peroxide: deionized water = 1:1:5; No. 2 The liquid is a mixture of nitric acid, hydrogen peroxide and deionized water, the ratio is nitric acid: hydrogen peroxide: deionized water = 1:1:5; No. 3 liquid is a mixture of concentrated sulfuric acid, hydrog...

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Abstract

The invention discloses a preparation method of an MEMS pressure-sensitive film based on concentrated boron doping, which can accurately control the thickness of the film and prepare a micron-sized film by adopting a self-stopping corrosion process in a concentrated boron doping technology, thereby improving the repeatability of capacitance measurement and effectively ensuring the actual production and preparation of a vacuum gauge. Meanwhile, a borosilicate glass removing scheme is adopted, borosilicate glass generated on the surface of the thin film can be effectively removed, the influence of stray capacitance caused by the borosilicate glass is eliminated, and meanwhile, the quality of the subsequent bonding process of the thin film and the glass can be powerfully guaranteed.

Description

technical field [0001] The invention belongs to the technical fields of micro-electromechanical systems and vacuum metering, and in particular relates to a method for preparing a MEMS pressure-sensitive thin film based on concentrated boron doping. Background technique [0002] The new capacitive thin-film vacuum gauge based on micro-electro-mechanical system (MEMS, Micro-Electro-Mechanical System) technology has the advantages of small size, light weight, low power consumption, compatible manufacturing process with CMOS, and convenient mass production. It can better Meet the vacuum measurement requirements under special conditions. Pressure-sensitive film is an important part of MEMS capacitive film vacuum gauge, and its design and manufacture have a crucial impact on the overall performance of the vacuum gauge. At the same time, the overall performance of the sensor depends largely on the mechanical properties of the film, which is reflected in the change of the pressure-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00B81B7/02G01L21/00
Inventor 李得天柯鑫李刚成永军孙雯君吴成耀刘珈彤汪宁陈会颖
Owner LANZHOU INST OF PHYSICS CHINESE ACADEMY OF SPACE TECH
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