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a mos 2 /mose 2 Heterojunction thin film and its preparation method and application

A heterojunction and thin film technology, applied in photosensitive equipment, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of gas flammability, restriction, and explosion, and achieve industrialized production and improve hydrogen production. Efficiency, the effect of reducing production costs

Active Publication Date: 2022-07-29
清远道童新能源有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, there are still some deficiencies in the commonly used preparation methods. For example, the residual gas after the reaction may be flammable, explosive or toxic through the method of chemical vapor deposition. Measures to prevent environmental pollution need to be taken. For equipment, there are often requirements for corrosion resistance. , the deposition rate is not high, and the application is limited

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] MoS of the present invention 2 / MoSe 2 An example of a heterojunction thin film, the MoS described in this example 2 / MoSe 2 The preparation method of the heterojunction film comprises the following steps:

[0028] (1) Preparation of reaction precursor solution: add sodium borohydride to the solvent, and stir until dissolved; after dissolution, add sulfur powder, sodium molybdate, and selenium powder in turn, stir until dissolved, and mix uniformly to obtain reaction precursor solution; wherein The ratio of the amount of sulfur powder, sodium molybdate, selenium powder and sodium borohydride is: sulfur powder: sodium molybdate: selenium powder: sodium borohydride = 4:4:4:5.3;

[0029] (2) Pre-surface treatment of the substrate substrate: the FTO conductive glass is cut, and ultrasonic cleaning is performed after the cutting. The cleaning time is 8 minutes, and then soaking and cleaning are performed. The soaking cleaning time is 2 minutes, and drying treatment is per...

Embodiment 2

[0033] MoS of the present invention 2 / MoSe 2 An example of a heterojunction thin film, the MoS described in this example 2 / MoSe 2 The preparation method of the heterojunction film comprises the following steps:

[0034] (1) Preparation of reaction precursor solution: adding sodium borohydride in a solvent, stirring until dissolved; after dissolution, adding thiourea, ammonium molybdate, and selenourea in turn, stirring until dissolution, and after mixing uniformly, a reaction precursor solution is obtained; wherein The ratio of the amount of thiourea, ammonium molybdate, selenourea and sodium borohydride is: thiourea: ammonium molybdate: selenourea: sodium borohydride = 4.2:4:4.2:6.6;

[0035] (2) Pre-surface treatment of the substrate substrate: the quartz sheet is cut, and ultrasonic cleaning is performed after the cutting, and the cleaning time is 10 minutes, followed by soaking and cleaning, and the soaking cleaning time is 3 minutes, and drying treatment is performed...

Embodiment 3

[0039] MoS of the present invention 2 / MoSe 2 An example of a heterojunction thin film, the MoS described in this example 2 / MoSe 2 The preparation method of the heterojunction film comprises the following steps:

[0040] (1) Preparation of reaction precursor solution: add sodium borohydride to the solvent and stir until dissolved; after dissolution, add sulfur powder, ammonium molybdate and sodium selenosulfate in turn, stir until dissolved, and after mixing evenly, obtain reaction precursor solution ; The ratio of the amount of sulfur powder, ammonium molybdate, sodium selenosulfate and sodium borohydride is: sulfur powder: ammonium molybdate: sodium selenosulfate: sodium borohydride=4.4:4:4.4:6.6;

[0041] (2) Pre-surface treatment of the substrate substrate: the silicon wafer is cut, ultrasonically cleaned after the cutting, the cleaning time is 12 minutes, and then soaked for cleaning, the soaking cleaning time is 4 minutes, and the drying treatment is performed after ...

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PUM

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Abstract

The invention discloses a MoS 2 / MoSe 2 A preparation method of a heterojunction thin film relates to the fields of semiconductor thin film preparation technology and new energy development. The preparation method includes the following steps: (1) Preparation of a reaction precursor solution: adding a reducing agent to a solvent, stirring until dissolved; after dissolution, adding a sulfur source, a molybdenum source, and a selenium source in sequence, stirring until dissolved, and mixing evenly After that, the reaction precursor solution is obtained; (2) the preliminary surface treatment of the substrate substrate: the substrate substrate is cut, ultrasonically cleaned after the cutting, and then soaked and cleaned, and dried after the cleaning is completed; (3) solvothermal reaction : The substrate substrate that has undergone the previous surface treatment in step (2) is contacted with the reaction precursor solution obtained in step (1), and a solvothermal reaction is carried out to obtain MoS deposited with MoS. 2 / MoSe 2 The substrate of the heterojunction thin film; (4) depositing MoS obtained in step (3) 2 / MoSe 2 The substrate of the heterojunction film is cleaned and vacuum dried to obtain the MoS 2 / MoSe 2 Heterojunction films.

Description

technical field [0001] The invention relates to the fields of semiconductor thin film preparation technology and new energy development, in particular to a MoS 2 / MoSe 2 Heterojunction thin films and preparation methods and applications thereof. Background technique [0002] MoS 2 , MoSe 2 All belong to transition metal chalcogenides (TMDS, such as WS2, WSe2, MoS2, MoSe2, etc.), among which MoS 2 For p-type semiconductor material, MoSe 2 It is an n-type semiconductor material with unique energy band structure, good electron transport characteristics, excellent electrochemical catalytic performance, stable performance, etc. Therefore, it is considered as a good application in solar cells, light Detectors, field effect transistors, materials for photocatalytic hydrogen production. [0003] At present, the common preparation methods of heterojunction structure materials are generally magnetron sputtering, chemical vapor deposition (CVD) and other methods. Compared with t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01G9/20H01L29/24H01L31/032H01L31/109
CPCY02P70/50
Inventor 彭陈阳刘富德郑大伟古元熊汉琴
Owner 清远道童新能源有限公司