Production method of passivation contact crystalline silicon cell

Abstract

The invention provides a production method of a passivation contact crystalline silicon cell. The method comprises the following steps: scribing and cracking a solar cell by a laser to obtain a plurality of cell slices; coating a passivation slurry on a cutting edge of each battery slice; and carrying out hydrogen passivation on the battery slice coated with the passivation slurry, wherein the passivation slurry can be sintered in a hydrogen passivation process.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a method for preparing a passivated contact crystal silicon cell. Background technique [0002] At present, due to the popularization of slicing battery components, shingling technology, merging and splicing technology, the use of laser to cut the whole battery cell has gradually become the mainstream trend of the industry. Especially for the promotion and application of large silicon wafers, cutting the whole cell into 1 / 2, 1 / 3, ..., 1 / n to reduce the series resistance of the module is the only way to increase the output power of the solar cell module. However, the current industry has found in practice that when a laser is used to partially melt the battery sheet along the axis of symmetry, and thermal stress or mechanical stress is used to separate the battery by scribing and splitting to cut the battery sheet, due to the Very serious laser damage is caused at the fracture surface,...

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Problems solved by technology

However, the current industry has found in practice that when a laser is used to partially melt the battery sheet along the axis of symmetry, and thermal stress or mechanical stress is used to separate the battery by scribing and splitting to cut the battery sheet, due to the Very serious laser damage is caused at the fracture surface, and there are a large number of dangling bonds and defect states on the surface, which become effective recombination centers for carriers.

A large number of carriers recombine through interface defects, which seriously reduces the conversion efficiency of solar cells

At present, for conventional PERC cells (Passivated Emitter and Rear Cell, that is, passivated emitter and rear cells), the photoelectric conversion efficiency loss of laser scribing and slicing is 0.1-0.2% compared with that before slicing.

For intrinsic thin-film heterojunction cells or N-type double-sided cells, the efficiency drop after slicing reaches 0.3-0.5%.

[0003] The industry is currently actively looking for a solution to the problem that laser cutting damage leads to the loss of efficiency of cut solar cells, which in turn reduces the power gain of half-cut modules or shingled modules, but there is no good solution

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